Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJ2310

Part #Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJ2310
Download 
Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJ2310
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate MOSFETS  
CJ2310
N-Channel MOSFET  
V

(BR)DSS

R

DS(on)

MAX  
I

D  

SOT-23  
@
1
0
V  
Ω
105
m
 
6
0  
V
3
A  
1. GATE  
@
12
5
m
Ω
4
.
5V  
2. SOURCE  
3. DRAIN  
DESCRIPTION  
The CJ2310 uses advanced trench technology to provide excellent  
R

DS(ON)

, low gate charge and operation with gate voltage as low as 2.5V.  
This device is suitable for use as a battery protection or in other switching  
application.  
FEATURE  
APPLICATION  
High power and current handing capability  
Battery Switch  
DC/DC Converter  
Lead free product is acquired  
Surface mount package  
MARKING  
Equivalent Circuit  
Maximum ratings (T

a

=25
℃
unless otherwise noted)  
Parameter  
Drain-Source Voltage  
Symbol  
V

DS  

V

GS  

I

D  

Value  
Unit  
V
60  
±20  
Gate-Source Voltage  
V
Continuous Drain Current  
Pulsed Drain Current
(note 1)  
Power Dissipation  
3
A
I

DM  

10  
A
P

D  

0.35  
357  
W
Thermal Resistance from Junction to Ambient (note 2)  
Junction Temperature  
R

θ
JA  

T

J  

℃
/W  
℃
150  
Storage Temperature  
T

STG  

-55~+150  
℃
1
E
,
Apr
,201
5  

MOSFET ELECTRICAL
 
CHARACTERISTICS  
T =25
 
unless otherwise specified  
℃
a
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
STATIC CHARACTERISTICS  
Drain-source breakdown voltage  
Zero gate voltage drain current  
Gate-body leakage current  
Gate threshold voltage
(note 3)  
V
(BR)DSS  
I

DSS  

V
GS
= 0V, I
D
=250µA  
V

DS

=60V,V

GS

= 0V  
V

GS

=±20V, V

DS

= 0V  
V

DS

=V

GS

, I

D

=250µA  
V

GS

=10V, I

D

=3A  
V

GS

=4.5V, I

D

=3A  
V

DS

=15V, I

D

=2A  
I

S

=3A, V

GS

= 0V  
60  
V
µA  
nA  
V
1
±100  
2
I

GSS  

V

GS(th)  

0.5  
1.4  
105  
125  
m
Ω
 
m
Ω  
S
Drain-source on-resistance
(note 3)  
R

DS(on)  

Forward tranconductance
(note 3)  
Diode forward voltage
(note 3)  
g

FS  

1.2  
V

SD  

V
DYNAMIC CHARACTERISTICS (note 4)  
Input Capacitance  
C

iss  

247  
34  
pF  
pF  
pF  
V

DS

=30V,V
GS
=0V,f =1MHz  
Output Capacitance  
C

oss  

C

rss  

Reverse Transfer Capacitance  
19.5  
SWITCHING CHARACTERISTICS (note 4)  
Turn-on delay time  
Turn-on rise time  
Turn-off delay time  
Turn-off fall time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Notes :  
t

d(on)  

6
15  
15  
10  
6
ns  
ns  
t

r  

t

d(off)  

t

f  

V

GS

=10V,V

DD

=30V,  
I

D

=1.5A,R

GEN

=1
ꢀ  
ns  
ns  
nC  
nC  
nC  
Q

g  

V

DS

=30V,V
GS
=4.5V,I
D
=3A  
Q

gs  

Q

gd  

1
1.3  
1. Repetitive rating : Pulse width limited by junction temperature.  
2. Surface mounted on FR4 board , t
≤
10s.  
3.
Pulse
T
e
st : Pulse Width
≤
300µs, Duty Cycle
≤
0.5%.  
4. Guaranteed by design, not subject to producting.  
2
E,Apr,2015  

Typical Characteristics  
Transfer Characteristics  
Output Characteristics  
15  
10  
5
8
6
4
2
0
Pulsed  
V

DS

=5.0V  
Pulsed  
V

GS

=5V
、
4V
、
3.0V  
T

a

=25
℃  
T

a

=100
℃  
V

GS

=2.5V  
V

GS

=2.0V  
0
0
1
2
3
4
5
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
 
V

DS

(V)  
GATE TO SOURCE VOLTAGE
 
V

GS

(V)  
R

DS(ON)  

I

D  

——  
—— V

GS  

R

DS(ON)  

140  
120  
100  
80  
400  
300  
200  
100  
0
T

a

=25
℃  
T

a

=25
℃  
Pulsed  
Pulsed  
VGS=4.5V  
VGS=10V  
I

D

=3A  
60  
40  
20  
2
4
6
8
10  
0
2
4
6
8
10  
0.5  
GATE TO SOURCE VOLTAGE
 
V

GS

(V)  
DRAIN CURRENT
 
I

D

(A)  
V

SD  

I

S

——  
Threshold Voltage  
10  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
T

a

=25
℃  
Pulsed  
1
I

D

=250uA  
0.1  
0.01  
1E-3  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
25  
50  
75  
100  
125  
SOURCE TO DRAIN VOLTAGE
 
V

SD

(V)  
JUNCTION TEMPERATURE
 
T

J

(
℃
)  
ꢀꢀꢀꢁꢂꢃꢄꢅꢆꢅꢂꢁꢂꢇꢈꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉ
3
ꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉ
E,Apr,2015  

SO
T
-23 Package Outline Dimensions  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
Max  
1.150  
0.100  
1.050  
0.500  
0.150  
3.000  
1.400  
2.550  
Min  
Max  
0.045  
0.004  
0.041  
0.020  
0.006  
0.118  
0.055  
0.100  
A
A1  
A2  
b
c
D
E
E1  
e
e1  
L
0.900  
0.000  
0.900  
0.300  
0.080  
2.800  
1.200  
2.250  
0.035  
0.000  
0.035  
0.012  
0.003  
0.110  
0.047  
0.089  
0.950 T
Y
P  
0.550 REF  
0.037 T
Y
P  
0.022 REF  
1.800  
2.000  
0.071  
0.079  
L1  
θ
0.300  
0°  
0.500  
8°  
0.012  
0°  
0.020  
8
°  
SO
T
-23 Suggested Pad Layout  
4
E,Apr,2015  

SO
T
-23 Tap
e
a
nd Reel  
SOT-23 Tape and reel  
SOT-23 Embossed
 
Carrier Tape  
Packaging Description:  
SOT-23 parts are shipped in tape. The carrier  
tape is made from a dissipative (carbon filled)  
polycarbonate resin. The cover tape is a multilayer  
film (Heat Activated Adhesive in nature) primarily  
composed of polyester film, adhesive layer, sealant,  
and anti-static sprayed agent. These reeled parts in  
standard option are shipped with 3,000 units per 7″  
or 17.8cm diameter reel. The reels are clear in color  
and is made of polystyrene plastic (anti-static  
coated).  
P0  
P1  
C
A
A
A-A  
A
P
Dimensions are in millimeter  
Pkg type  
SOT-23  
A
B
C
d
E
F
P0  
P
P1  
W
3.15  
2.77  
1.22  
Ø1.50  
1.75  
3.50  
4.00  
4.00  
2.00  
8.00  
SOT-23 Tape
 
Leader and Trailer  
Trailer Tape  
Leader Tape  
Components  
100±2 Empty Pockets  
50±2 Empty Pockets  
SOT-23 Reel  
D
W2  
3000  
2500  
1500  
1000  
500  
W1  
Dimensions are in millimeter  
Reel Option  
7”Dia  
D
D1  
D2  
G
H
I
W1  
W2  
Ø178.00  
54.40  
13.00  
R78.00  
R25.60  
R6.50  
9.50  
12.30  
Box Size(mm)  
203×203×195  
Carton Size(mm)  
438×438×220  
G.W.(kg)  
REEL  
Reel Size  
7 inch  
Box  
30,000 pcs  
Carton  
120,000 pcs  
3000 pcs  
5
E,Apr,2015