Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJ2321
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2321
P-Channel 20-V(D-S) MOSFET
V
(BR)DSS
R
DS(on)
MAX
I
D
SOT-23
@
Ω
–
4.5
V
57
m
@
76
m
Ω
–
2
.
5
V
V
–
20
–
2.9
A
1. GATE
@
11
0
m
Ω
–
1
.
8
V
2. SOURCE
3. DRAIN
APPLICATION
FEATURE
z
z
PA Switch
z
TrenchFET Power MOSFET
Load Switch
MARKING
Equivalent Circuit
Maximum ratings (T
a
=25
℃
unless otherwise noted)
Symbol
Value
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
I
D
-20
±12
V
Continuous Drain Current
-2.9
A
Pulsed Drain Current
I
DM
I
S
-12
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
-0.59
0.35
P
D
W
R
θ
JA
T
J
357
℃
/W
150
℃
Storage Temperature
T
stg
-50 ~+150
1
E
,
May
,201
6
MOSFET ELECTRICAL
CHARACTERISTICS
T =25
a
unless otherwise specified
℃
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-source breakdown voltage
Gate-source leakage
V
(BR) DSS
I
GSS
V
GS
= 0V, I
D
=-10µA
V
DS
=0V, V
GS
=
±
12V
V
DS
=-16V, V
GS
=0V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-4.5V, I
D
=-3.3A
V
GS
=-2.5V, I
D
=-2.8A
V
GS
=-1.8V, I
D
=-2.3A
V
DS
=-5V, I
D
=-3.3A
V
GS
=0V,I
S
=-1.6A
-20
V
nA
µA
V
±100
-1.0
Zero Gate voltage drain current
Gate-source threshold voltage
I
DSS
V
GS(th)
-0.4
-0.9
0.057
0.076
0.110
Drain-source on-state resistance
R
DS(on)
Ω
3
Forward tranconductance
Forward diode voltage
Dynamic
g
fS
S
V
-1.2
V
SD
Input capacitance
a,b
Output capacitance
a,b
Reverse transfer capacitance
a,b
Total Gate charge
a
Gate-Source charge
a
Gate-Drain charge
a
Switching
a,b
C
iss
C
oss
C
rss
Q
g
715
170
120
V
DS
=-6V,V
GS
=0V,f =1MHz
V
DS
=-6V,V
GS
=-4.5V,I
D
=-3.3A
pF
13
nc
nc
nc
Q
gs
Q
gd
1.2
2.2
Turn-on delay Time
Rise time
t
d(on)
t
r
t
d(off)
t
f
25
55
90
60
V
GEN
=-4.5V,V
DD
=-6V,
ns
I
D
=-1.0A,
R
G
=6
ꢀ
, R
L
=6
ꢀ
Turn-off delay time
Fall time
Notes :
a. Pulse
T
e
st : pulse width
≤
300µs, duty cycle
≤
2%.
b
. These parameters have no way to verify.
2
E,May,2016
Typical Characteristics
Output Characteristics
Transfer Characteristics
-16
-12
-8
-10
-8
V
GS
=-4.5V,-4.0V,-3.5V,-3.0V,-2.5V
T
a
=25
℃
T
a
=25
℃
Pulsed
Pulsed
V
GS
=-2.0V
-6
-4
V
GS
=-1.5V
-4
-2
V
GS
=-1.0V
-0
-0
-0
-1
-2
-3
-4
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
GATE TO SOURCE VOLTAGE
V
GS
(V)
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
R
DS(ON)
—— I
D
R
DS(ON)
—— V
GS
300
250
200
150
100
50
500
400
300
200
100
0
T
a
=25
℃
T
a
=25
℃
Pulsed
Pulsed
V
GS
=-1.8V
I
D
=-3.3A
V
GS
=-2.5V
V
GS
=-4.5V
0
-0
-2
-4
-6
-8
-10
-12
-0
-2
-4
-6
-8
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
—— V
SD
-20
-10
T
a
=25
℃
Pulsed
-3
-1
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
ꢀꢀꢀꢁꢂꢃꢄꢅꢆꢅꢂꢁꢂꢇꢈꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉ
3
ꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉ
E,May,2016
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
4
E,May,2016
