Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJ3406

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  

SOT-23 Plastic-Encapsulate

MOSFETs  

CJ3406

N-Channel Enhancement Mode Field Effect Transistor  

I

D  

V

(BR)DSS  

R

DS(on)

MAX  

SOT-23  

mΩ@10V  

65  

30V  

3.6A  

mΩ@4.5V  

105  

1. GATE  

2. SOURCE  

3. DRAIN  

DESCRIPTION  

The CJ3406 use advanced trench technology to provide excellent  

R

DS(ON)

and low gate charge. This device is suitable for use as a  

load switch or in PWM applications.  

Equivalent Circuit  

MARKING  

R6  

Maximum ratings ( T

a

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

GS  

I

D  

30  

±20  

V

V

Continuous Drain Current  

Drain Current-Pulsed

(note 1)  

Power Dissipation  

3.6  

A

I

DM  

P

D  

15  

A

0.35  

357  

W

℃

/W  

℃

Thermal Resistance from Junction to Ambient  

Junction Temperature  

R

θ

JA  

T

J  

150  

Storage Temperature  

T

STG  

-55~ +150  

℃

1

B

,

Mar

,201

5  

MOSFET ELECTRICAL

 

CHARACTERISTICS  

T =25  

a

unless otherwise specified  

℃

Parameter  

Symbol  

Test Condition  

Min  

Typ  

Max  

Units  

STATIC PARAMETERS  

Drain-source breakdown voltage  

Zero gate voltage drain current  

Gate-body leakage current  

Gate threshold voltage  

V

(BR) DSS  

I

DSS  

V

GS

= 0V, I

D

=250µA  

V

DS

=24V,V

GS

= 0V  

V

GS

=±20V, V

DS

= 0V  

V

DS

=V

GS

, I

D

=250µA  

V

GS

=10V, I

D

=3.6A  

V

GS

=4.5V, I

D

=2.8A  

V

DS

=5V, I

D

=3.6A  

I

S

=1A  

30  

V

µA  

nA  

V

1

±100  

3

I

GSS  

V

GS(th)  

1

3

65  

m

Ω

 

m

Ω  

S

Drain-source on-resistance

(note 2)  

R

DS(on)  

105  

Forward tranconductance

(note 2)  

Diode forward voltage  

DYNAMIC PARAMETERS

(note 3)  

Input capacitance  

g

FS  

1

V

SD  

V

C

iss  

C

oss  

C

rss  

R

g  

375  

pF  

pF  

pF  

Ω

V

DS

=15V,V

GS

=0V,f =1MHz  

V

DS

=0V,V

GS

=0V,f =1MHz  

Output capacitance  

57  

39  

Reverse transfer capacitance  

Gate resistance  

6

SWITCHING PARAMETERS

(note 3)  

Turn-on delay time  

t

d(on)  

t

r  

t

d(off)  

t

f  

4.6  

1.9  

ns  

ns  

ns  

ns  

Turn-on rise time  

V

GS

=10V,V

DS

=15V,  

R

L

=2.2

ꢀ

,R

GEN

=3

ꢀ  

Turn-off delay time  

20.1  

2.6  

Turn-off fall time  

Notes :  

1. Repetitive

 

Rating : Pulse width limited by maximum junction temperature.  

2. Pulse

 

T

e

st : Pulse width

≤

300µs, duty cycle

≤

0.5%.  

3. These

 

parameters have no way to verify.  

2

B,Mar,2015  

Typical Characteristics  

Output Characteristics  

Transfer Characteristics  

15  

12  

9

12  

10  

8

V

DS

=3V  

V

GS

=10V  

V

GS

=6V  

V

GS

=4.5V  

T

a

=25

℃

 

T

a

=100

℃  

V

GS

=4V  

6

6

4

V

GS

=3.5V  

V

GS

=3V  

3

2

0

0

0

1

2

3

4

5

0

1

2

3

4

5

6

DRAIN TO SOURCE VOLTAGE

 

V

DS

(V)  

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

R

DS(ON)

V

GS  

——  

R

DS(ON)  

I

D  

——  

90  

80  

70  

60  

50  

40  

30  

200  

160  

120  

80  

T

a

=25

℃  

Pulsed  

I

D

=3.6A  

V

GS

=4.5V  

T

a

=100

℃  

V

GS

=10V  

40  

T

a

=25

℃  

0

1.0  

1.5  

2.0  

2.5  

3.0  

3.5  

4.0  

4.5  

5.0  

0

2

4

6

8

10  

DRAIN CURRENT

 

I

D

(A)  

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

Threshold Voltage  

I

S

——  

V

SD  

5

2.0  

1.8  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

I

D

=250uA  

1

T

a

=100

℃  

T=25

℃  

0.1  

0.4  

0.6  

0.8  

1.0  

1.2  

1.4  

25  

50  

75  

100  

125  

SOURCE TO DRAIN VOLTAGE

 

V

SD

(V)  

JUNCTION TEMPERATURE

 

T

j

(

℃

)  

3

B,Mar,2015  

SO

T

-23 Package Outline Dimensions  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min  

Max  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

c

D

E

E1  

e

e1  

L

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.047  

0.089  

0.950 T

Y

P  

0.550 REF  

0.037 T

Y

P  

0.022 REF  

1.800  

2.000  

0.071  

0.079  

L1  

θ

0.300  

0°  

0.500  

8°  

0.012  

0°  

0.020  

8

°  

SO

T

-23 Suggested Pad Layout  

4

B,Mar,2015  

SO

T

-23 Tap

e

a

nd Reel  

SOT-23 Tape and reel  

SOT-23 Embossed

 

Carrier Tape  

Packaging Description:  

SOT-23 parts are shipped in tape. The carrier  

tape is made from a dissipative (carbon filled)  

polycarbonate resin. The cover tape is a multilayer  

film (Heat Activated Adhesive in nature) primarily  

composed of polyester film, adhesive layer, sealant,  

and anti-static sprayed agent. These reeled parts in  

standard option are shipped with 3,000 units per 7″  

or 17.8cm diameter reel. The reels are clear in color  

and is made of polystyrene plastic (anti-static  

coated).  

P0  

P1  

C

A

A

A-A  

A

P

Dimensions are in millimeter  

Pkg type  

SOT-23  

A

B

C

d

E

F

P0  

P

P1  

W

3.15  

2.77  

1.22  

Ø1.50  

1.75  

3.50  

4.00  

4.00  

2.00  

8.00  

SOT-23 Tape

 

Leader and Trailer  

Trailer Tape  

Leader Tape  

Components  

100±2 Empty Pockets  

50±2 Empty Pockets  

SOT-23 Reel  

D

W2  

3000  

2500  

1500  

1000  

500  

W1  

Dimensions are in millimeter  

Reel Option  

7”Dia  

D

D1  

D2  

G

H

I

W1  

W2  

Ø178.00  

54.40  

13.00  

R78.00  

R25.60  

R6.50  

9.50  

12.30  

Box Size(mm)  

203×203×195  

Carton Size(mm)  

438×438×220  

G.W.(kg)  

REEL  

Reel Size  

7 inch  

Box  

30,000 pcs  

Carton  

120,000 pcs  

3000 pcs  

5

B,Mar,2015