Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJAB20N03
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NGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
N
WB
3.3×3.3-8L Plastic-Encapsulate MOSFETS
CJAB20N03
N-Channel Power MOSFET
I
D
V
(BR)DSS
R
DS(on)
TYP
PDFN
WB
3.
3×
3.
3-8L
@
10
V
8.5
m
Ω
3
0
V
2
0
A
@
12
m
Ω
4
.5
V
DESCRIPTION
The CJAB20N03 uses advanced trench technology and design
to provide excellent R
DS(ON)
with low gate charge. It can be used in a
wide variety of applications
FEATURES
Battery switch
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Special process technology for high ESD
capabilit
y
Load switch
High density cell design for ultra low R
DS(ON)
Fully characterized avalanche voltage and
current
APPLICATIONS
SMPS and general purpose applications
Hard switched and high frequency circuits
Uninterruptible Power Supply
MARKING
EQUIVALENT CIRCUIT
D
D
D
D
8
7
6
5
AB20N03 = Part No.
Solid dot=Pin1 indicator
XX=Date Code
AB
20N03
XX
2
3
1
4
S
S
G
S
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Parameter
Drain-Source Voltage
Symbol
V
DS
Limit
30
Unit
V
Gate-Source Voltage
V
GS
±20
20
V
Continuous Drain Current
Pulsed Drain Current
I
D
A
I
DM
100
70
A
(1)
Single Pulsed Avalanche Energy
Power Dissipation
E
AS
mJ
W
P
D
R
θJA
T
J
1.5
Thermal Resistance from Junction to Ambient
Junction Temperature
83.3
150
℃
/W
℃
Storage Temperature Range
T
stg
T
L
-55 ~+150
260
℃
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).E
condition: V
=15V,L=0.14mH, R
=25Ω, Starting T
= 25°C
DD
AS
G
J
(2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
1
Rev
.
– 1.0
MOSFET ELECTRICAL
CHARACTERISTICS
T =25
a
unless otherwise specified
℃
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
On characteristics (note1)
Gate-threshold voltage
V
(BR) DSS
I
DSS
V
GS
= 0V, I
D
=250µA
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
30
V
1
µA
nA
±100
I
GSS
V
GS(th)
R
DS(on)
g
FS
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=10A
V
DS
=5V, I
D
=20A
1.0
15
1.
7
8.5
12
3.0
12
18
V
mΩ
mΩ
S
Static drain-source on-sate resistance
Forward transconductance
Dynamic characteristics (note 2)
Input capacitance
C
iss
C
oss
C
rss
823
138
100
V
DS
=15V,V
GS
=0V,
f =1MHz
pF
Output capacitance
Reverse transfer capacitance
Switching characteristics (note 2)
Total gate charge
Q
g
Q
gs
Q
gd
13
3
V
DS
=15V, V
GS
=10V,
I
D
=9A
nC
ns
Gate-source charge
Gate-drain charge
4.5
Turn-on delay time
t
d
10
8
(on)
Turn-on rise time
t
r
t
d(off)
t
f
V
DS
=15V,V
GS
=10V,
R
L
=1.8Ω,R
GEN
=3Ω
Turn-off delay time
30
5
Turn-off fall time
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
V
SD
I
S
V
GS
=0V, I
S
=10A
1.2
20
V
A
A
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
Reverse Recovery Time
I
SM
100
t
rr
T
J
= 25°C, I
F
= 10A
22
12
35
20
n
s
Reverse Recovery Charge
di/dt = 100A/μs(Note
1
)
Q
rr
nC
Notes:
1. Pulse
T
est : Pulse Width≤300µs, duty cycle ≤2%.
2. Guaranteed
by design, not subject to production.
2
Rev
.
– 1.0
Typical Characteristics
Transfer Characteristics
Output Characteristics
30
25
20
15
10
5
30
25
20
15
10
5
V
DS
=5V
Pulsed
Pulsed
10V
V
GS
= 5V
V
GS
= 4V
V
GS
=3V
T
a
=25
℃
V
GS
=2.5V
0
0
0
1
2
3
4
5
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
——
V
GS
R
DS(ON)
I
D
——
10
9
8
7
6
5
4
3
2
1
0
20
18
16
14
12
10
8
T
a
=25
℃
Pulsed
I
D
=10A
Pulsed
V
GS
=10V
T
a
=100
℃
T
a
=25
℃
6
4
2
0
5
10
15
20
25
3
4
5
6
7
8
9
10
3
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
Threshold Voltage
I
S
——
V
SD
25
10
2.5
2.0
1.5
1.0
0.5
0.0
Pulsed
1
I
D
=250uA
T
a
=25
℃
T
a
=100
℃
0.1
0.01
1E-3
0
200
400
600
800
1000
1200
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(mV)
JUNCTION TEMPERATURE
T
J
(
℃
)
Rev
.
– 1.0
3
P
DFNWB3
.3
×
3
.3
-8 L
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
A1
A2
D
D1
E
E1
E2
b
e
L
L1
L2
L3
H
0.650
0.850
0.026
0.033
0.152 REF.
0~0.05
0.006 REF.
0~0.002
2.900
2.300
2.900
3.150
1.535
0.200
0.550
0.300
0.180
3.100
2.600
3.100
3.450
1.935
0.400
0.750
0.500
0.480
0.114
0.091
0.114
0.124
0.060
0.008
0.022
0.012
0.007
0.122
0.102
0.122
0.136
0.076
0.016
0.030
0.020
0.019
0~0.100
0~0.100
0~0.004
0~0.004
0.315
9°
0.515
13°
0.012
9°
0.020
13°
θ
P
DFNWB3
.3
×
3
.3
-8 L
NOTICE
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
Rev
.
– 1.0
4
P
DFNWB3
.3
×
3
.3
-8 L
P
DFNWB3
.3
×
3
.3
-8 L
P
DFNWB3
.3
×
3
.3
-8 L
P
D
F
N
W
B
3
.
3
×
3
.
3
–
8
L
P
DFNWB3
.3
×
3
.3
-8 L
P
DFNWB3
.3
×
3
.3
-8 L
Rev
.
– 1.0
5
