Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJAB35P03
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NGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
N
WB
3.3×3.3-8L Plastic-Encapsulate MOSFETS
CJA
B35
P03
P-Channel Power MOSFET
I
D
PDFN
WB
3.3×3.3-8L
V
(BR)DSS
R
DS(on)
MAX
-35
A
15mΩ
@
-30
V
-10V
DESCRIPTION
The CJAB35P03 uses advanced trench technology and design
to provide excellent R
DS(ON)
with low gate charge. It can be used in a
wide variety of applications
FEATURES
High density cell design for ultra low R
DS(ON)
Fully characterized avalanche voltage and
current
Excellent package for good heat dissipation
Special process technology for high ESD
capabilit
y
Good stability and uniformity with high E
AS
APPLICATIONS
Battery and loading switching
MARKING
EQUIVALENT CIRCUIT
D
D
D
D
8
7
6
5
CJAB35P03 = Part No.
Solid dot=Pin1 indicator
XX=Date Code
CJAB
35P03
XX
1
2
3
4
S
S
S
G
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Parameter
Drain-Source Voltage
Symbol
V
DS
Limit
-30
Unit
V
Gate-Source Voltage
V
GS
±20
-35
V
(1)
Continuous Drain Current
Pulsed Drain Current
I
D
A
I
DM
-140
240
A
(1)
Single Pulsed Avalanche Energy
Power Dissipation
mJ
W
E
AS
P
D
3
(2)
Thermal Resistance from Junction to Ambient
Junction Temperature
℃
/W
℃
R
θJA
41.67
150
T
J
T
stg
T
L
Storage Temperature Range
-55 ~+150
260
℃
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).E
condition: V
=15V,L=0.1mH, R
=25Ω, Starting T
= 25°C
DD
AS
G
J
(2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
Rev
.
– 1.
0
1
MOSFET ELECTRICAL
CHARACTERISTICS
T =25
a
unless otherwise specified
℃
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
On characteristics (note1)
Gate-threshold voltage
V
(BR) DSS
I
DSS
V
GS
= 0V, I
D
=-250µA
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
-30
V
-1
µA
nA
±100
I
GSS
V
GS(th)
R
DS(on)
g
FS
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, I
D
=-12A
V
GS
=-4.5V, I
D
=-12A
V
DS
=-10V, I
D
=-12A
-1.0
-1.6
9
-2.5
15
V
mΩ
mΩ
S
Static drain-source on-sate resistance
14
22
25
Forward transconductance
Dynamic characteristics (note 2)
Input capacitance
C
iss
C
oss
C
rss
2280
385
V
DS
=-15V,V
GS
=0V,
f =1MHz
pF
Output capacitance
Reverse transfer capacitance
Switching characteristics (note 2)
Total gate charge
278
Q
g
Q
gs
Q
gd
38
7
V
DS
=-15V,I
D
=-12A,
V
GS
=-10V
nC
ns
Gate-source charge
Gate-drain charge
9
Turn-on delay time
t
d
10
22
36
9
(on)
Turn-on rise time
t
r
t
d(off)
t
f
V
DD
=-15V,I
D
=-1A,R
L
=15Ω
V
GS
=-10V,R
G
=2.5Ω
Turn-off delay time
Turn-off fall time
Drain-Source Diode Characteristics
Drain-source diode forward voltage
(note1)
V
SD
I
S
V
GS
=0V, I
S
=-12A
-0.8
-1.2
-35
V
A
A
Continuous drain-source diode forward
current
(note3)
Pulsed drain-source diode forward current
Notes:
I
SM
-140
1. Pulse
T
est : Pulse Width≤300µs, duty cycle ≤2%.
2. Guaranteed
by design, not subject to production.
3. Surface
Mounted on FR4 Board, t
≤
10 sec.
Rev
.
– 1.
0
2
Typical Characteristics
Transfer Characteristics
Output Characteristics
-70
-56
-42
-28
-14
-0
-5
-4
-3
-2
-1
-0
V
DS
=-10V
Pulsed
Pulsed
V
GS
=-10V,-6V
V
GS
=-5.0V
T
J
=125
℃
T
J
=25
℃
V
GS
=-4.0V
V
GS
=-3.
0
V
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
——
V
GS
R
DS(ON)
I
D
——
20
18
16
14
12
10
8
24
22
20
18
16
14
12
10
8
T
a
=25
℃
Pulsed
I
D
=-12A
Pulsed
V
GS
=-
4.5
V
T
a
=100
℃
V
GS
=-10V
T
a
=25
℃
6
6
4
4
2
2
0
-0.5
0
-4.0
-10
-20
-30
-40
-50
-4.5
-5.0
-5.5 -6.0
-6.5
-7.0
-7.5
-8.0
-8.5 -9.0
-9.5 -10.0
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
Threshold Voltage
I
S
——
V
SD
-100
-10
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
Pulsed
T
a
=100
℃
T
a
=25
℃
-1
I
D
=-250uA
-0.1
-0.01
-1E-3
-0
-200
-400
-600
-800
-1000
-1200
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(mV)
JUNCTION TEMPERATURE
T
J
(
℃
)
Rev
.
– 1.
0
3
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
A1
A2
D
D1
E
E1
E2
b
e
L
L1
L2
L3
H
0.650
0.850
0.026
0.033
0.152 REF.
0~0.05
0.006 REF.
0~0.002
2.900
2.300
2.900
3.150
1.535
0.200
0.550
0.300
0.180
3.100
2.600
3.100
3.450
1.935
0.400
0.750
0.500
0.480
0.114
0.091
0.114
0.124
0.060
0.008
0.022
0.012
0.007
0.122
0.102
0.122
0.136
0.076
0.016
0.030
0.020
0.019
0~0.100
0~0.100
0~0.004
0~0.004
0.315
9°
0.515
13°
0.012
9°
0.020
13°
θ
NOTICE
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
Rev
.
– 1.
0
4
