Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJAB60N03
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NGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
N
WB
3.3×3.3-8L Plastic-Encapsulate MOSFETS
CJAB
60
N03
N-Channel Power MOSFET
I
D
R
DS(on)
MAX
V
(BR)DSS
PDFN
WB
3.3×3.3-8L
@10V
4.2mΩ
3
0
V
60A
@
7.3mΩ 4.5V
DESCRIPTION
The CJAB60N03 uses advanced trench technology and design
to provide excellent R
DS(ON)
with low gate charge. It can be used in a
wide variety of applications
FEATURES
Battery switch
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Special process technology for high ESD
capabilit
y
Load switch
High density cell design for ultra low R
DS(ON)
Fully characterized avalanche voltage and
current
APPLICATIONS
SMPS and general purpose applications
Hard switched and high frequency circuits
Uninterruptible Power Supply
MARKING
EQUIVALENT CIRCUIT
D
D
D
D
8
7
6
5
CJAB60N03 = Part No.
Solid dot=Pin1 indicator
XX=Date Code
CJAB
60N03
XX
2
3
1
4
S
S
G
S
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Parameter
Symbol
V
DS
Value
30
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
V
V
GS
±20
60
①
I
D
A
②
I
DM
240
1.5
⑥
Maximum Power Dissipation
P
D
W
mJ
③
Single Pulsed Avalanche Energy
420
E
AS
⑥
83.3
R
θJA
Thermal Resistance from Junction to Ambient
Junction
T
e
mperature
℃
/W
T
J
T
STG
T
L
150
℃
Storage
T
e
mperature
-55~ +150
260
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
Rev
.
– 1.0
1
MOSFET ELECTRICAL
CHARACTERISTICS
T =25
a
unless otherwise specified
℃
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
V
(BR) DSS
I
DSS
V
GS
= 0V, I
D
=250uA
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
30
V
1
µA
nA
I
GSS
±100
④
On characteristics
Gate-threshold voltage
V
GS(th)
R
DS(on)
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
V
1.0
1.4
2.9
4.
2
2
4
2.5
4.2
mΩ
mΩ
Static drain-source on-sate resistance
7.3
Forward transconductance
g
FS
V
DS
=10V, I
D
=2
0
A
S
④ ⑤
Dynamic characteristics
Input capacitance
C
iss
C
oss
C
rss
2460
409
3198
531
1230
204
V
DS
=15V,V
GS
=0V,
f =100KHz
pF
Output capacitance
373
485
Reverse transfer capacitance
186
④ ⑤
Switching characteristics
Total gate charge
Q
g
Q
gs
Q
gd
61.2
4.7
V
GS
=10V,
nC
ns
Gate-source charge
V
DS
=25V, I
D
=14A
Gate-drain charge
19.7
Turn-on delay time
t
d
(on)
19
44
58
Turn-on rise time
t
r
V
DS
=15V,R
L
=0.75Ω,
V
GS
=10V,R
G
=3Ω
Turn-off delay time
t
d(off)
t
f
Turn-off fall time
16.7
Drain-Source Diode Characteristics
Drain-source diode forward voltage
Continuous drain-source diode forward current
④
V
SD
1.2
60
V
A
V
GS
=0V, I
S
=2
0
A
①
I
S
②
I
SM
Pulsed drain-source diode forward current
240
A
Notes:
1.
T =25
℃
Limited only by maximum temperature allowed.
C
2.
P ≤10μs,
Duty cycle≤1%.
W
3.
EAS condition: V
=
15
V,V =10V,
L=0.
1
mH, Rg=25Ω
Starting T
= 25°
℃
.
DD GS
J
4.
Pulse
T
e
st : Pulse Width≤300µs, duty cycle ≤2%.
5.
Guaranteed by design, not subject to production.
6.
The value of R
is measured with the device mounted on 1 in 2 FR-4 board with
2oz. Copp
er, in a still air
θJA
environment
T =25
℃
.
a
with
Rev
.
– 1.0
2
Typical Characteristics
Transfer Characteristics
Output Characteristics
60
40
20
0
60
40
20
0
Pulsed
T
a
=25
℃
V
DS
=12V
Pulsed
V
GS
=10V,6V,4.5V,4V,3.5V
T
a
=25
℃
V
GS
=3.0V
V
GS
=2.5V
0
1
2
3
4
5
0
1
2
3
4
5
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
——
V
GS
R
DS(ON)
I
D
——
8
6
4
2
0
20
15
10
5
T
a
=25
℃
T
a
=25
℃
Pulsed
Pulsed
V
GS
= 4.5V
V
GS
= 10V
ID=20A
0
0
2
4
6
8
10
12
5
20
40
60
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
V
SD
Threshold Voltage
I
S
——
2.5
2.0
1.5
1.0
0.5
0.0
60
10
T
a
=25
℃
T
a
=25
℃
Pulsed
Pulsed
1
0.1
0.1
1
2
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
JUNCTION TEMPERATURE
T
J
(
℃
)
Rev
.
– 1.0
3
Typical Characteristics
Gate Charge
Capacitances
10000
1000
100
10
8
V
DS
=25V
I
D
=14A
Pulsed
f=100KHz
Pulsed
Ciss
6
Coss
Crss
4
2
0
30
65
0.1
1
10
0
10
20
30
40
50
60
DRAIN TO SOURCEVOLTAGE
V
DS
(V)
GATE CHARGE (nC)
Maximum Forward Biased Safe Operating Area
1000
100
10
Tc=25
℃
Single pulse
I
CM
R
DSON
limited
100us
1ms
10ms
1
DC
BVDSS
0.1
0.1
1
10
100
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
Rev
.
– 1.0
4
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
A1
A2
D
D1
E
E1
E2
b
e
L
L1
L2
L3
H
0.650
0.850
0.026
0.033
0.152 REF.
0~0.05
0.006 REF.
0~0.002
2.900
2.300
2.900
3.150
1.535
0.200
0.550
0.300
0.180
3.100
2.600
3.100
3.450
1.935
0.400
0.750
0.500
0.480
0.114
0.091
0.114
0.124
0.060
0.008
0.022
0.012
0.007
0.122
0.102
0.122
0.136
0.076
0.016
0.030
0.020
0.019
0~0.100
0~0.100
0~0.004
0~0.004
0.315
9°
0.515
13°
0.012
9°
0.020
13°
θ
NOTICE
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
Rev
.
– 1.0
5
