Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJAC70P06
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB5×6-8L Plastic-Encapsulate MOSFETS
CJAC70P06
P-Channel Power MOSFET
I
D
R
DS(on)
TYP
V
(BR)DSS
7.6
mΩ@
-10V
PDFNWB5×6-8L
–
6
0V
–
7
0A
9.2
mΩ@
–
4.5
V
DESCRIPTION
The CJAC
7
0P0
6
uses advanced trench technology and design to
provide excellent R
DS(ON)
with low gate charge. It can be used in a
wide variety of applications
FEATURES
Battery switch
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Special process technology for high ESD
capabilit
y
Load switch
High density cell design for ultra low R
DS(ON)
Fully characterized avalanche voltage and
current
APPLICATIONS
SMPS and general purpose applications
Hard switched and high frequency circuits
Uninterruptible Power Supply
EQUIVALENT CIRCUIT
MARKING
D
D
D
D
8
7
6
5
CJAC
70
P0
6
= Part No.
Solid dot = Pin1 indicator
.
XX = Code
.
CJAC
70
P0
6
XX
1
2
3
4
S
S
S
G
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Parameter
Drain-Source Voltage
Symbol
V
DS
Limit
-60
Unit
V
Gate-Source Voltage
V
GS
±20
-70
V
①
Continuous Drain Current
I
D
A
②
Pulsed Drain Current
I
DM
-280
320
1
15
62.5
1.09
A
③
Single Pulsed Avalanche Energy
Power Dissipation
E
AS
mJ
W
①
P
D
Thermal Resistance from Junction to Ambient
Thermal Resistance from Junction to Case
R
θJA
℃
/W
℃
/W
℃
①
R
θJC
Junction Temperature and Storage Temperature Range
-55 ~+150
T
J
T
stg
1
Rev. –
2
.
1
MOSFET ELECTRICAL
CHARACTERISTICS
T =25
a
unless otherwise specified
℃
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V
(BR) DSS
V
GS
= 0V, I
D
=
–
250µA
–
6
0
V
–
1
.0
V
DS
=
–
48
V,
T
J
=25
℃
I
DSS
µA
Zero gate voltage drain current
V
GS
=0V
–
100
T
J
=
1
25
℃
Gate-body leakage current
I
GSS
V
DS
=0V, V
GS
=±20V
±100
nA
④
On characteristics
Gate-threshold voltage
V
GS(th)
R
DS(on)
V
DS
=V
GS
, I
D
=
–
250µA
–
1.
0
–
1.
5
–
2.5
V
V
GS
=
–
10V, I
D
=
–
2
0
A
V
GS
=
–
4.5
V, I
D
=
-10
A
mΩ
mΩ
7.6
9.2
8.6
12
Static drain-source on-sate resistance
Forward transconductance
g
FS
V
DS
=
–
10V, I
D
=
–
3
A
S
17
④ ⑤
Dynamic characteristics
Input capacitance
C
iss
12500
700
8600
V
DS
=
-3
0
V,V
GS
=0V,
pF
Output capacitance
Reverse transfer capacitance
Gate resistance
C
oss
4
5
0
f =1MHz
C
rss
280
4.3
43
0
Ω
R
g
f =1MHz
④ ⑤
Switching characteristics
Total gate charge
Q
g
Q
gs
Q
gd
140
17
210
25
V
GS
=
-1
0V, V
DS
=
-48
V,
I
D
=
-5
A
nC
ns
Gate-source charge
Gate-drain charge
28
43
Turn-on delay time
t
d
42
140
400
800
400
(on)
Turn-on rise time
t
r
t
d(off)
t
f
V
DS
=
-48
V,
R
L
=0.75Ω,
V
GS
=
–
10V,
I
D
=-1A
2
00
400
200
Turn-off delay time
Turn-off fall time
Drain-Source Diode Characteristics
Drain-source diode forward voltage
④
V
SD
V
GS
=0V, I
S
=
-12
A
-1.2
V
A
A
Continuous drain-source diode forward
current
①
I
S
-70
②
Pulsed drain-source diode forward current
I
SM
-280
Notes:
1.
T
C
=25
℃
Limited only by maximum temperature allowed.
2.
P
W
≤10μs, Duty cycle≤1%.
3.
EAS condition: V
DD
=
-50
V,V
GS
=
–
10V, L=
0.1
mH, R
g
=25Ω Starting
T
J
= 25°
℃
.
4.
Pulse
T
e
st : Pulse Width≤300µs, duty cycle ≤2%.
5.
Guaranteed by design, not subject to production.
6.
The value of R
θJA
is measured with the device mounted on 1 in 2 FR-4 board with
2oz. Copper, in a still air environment with T
a
=25
℃
.
2
Rev. –
2
.
1
Typical Characteristics
Transfer Characteristics
Output Characteristics
-70
-60
-50
-40
-30
-20
-10
0
-70
-60
-50
-40
-30
-20
-10
0
T
J
=25
℃
V
DS
=-12V
Pulsed
Pulsed
V
GS
=-10V,-6V,-4V,-3.5V,-3V
T
J
=25
℃
V
GS
=-2.5V
0
-1
-2
-3
-4
-5
0
-1
-2
-3
-4
-5
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
——
V
GS
R
DS(ON)
I
D
——
14
12
10
8
25
20
15
10
5
T
J
=25
℃
ID=-20A
Pulsed
Pulsed
V
GS
= -4.5V
T
J
=125
℃
T
J
=25
℃
V
GS
= -10V
6
4
2
0
-5
-10
-15
-20
-25
-30
0
-2
-4
-6
-8
-10
-12
-14
GATE TO SOURCE VOLTAGE
V
GS
(V)
DRAIN CURRENT
I
D
(A)
V
SD
Threshold Voltage
I
S
——
-100
-2.0
-1.5
-1.0
-0.5
0.0
Pulsed
Pulsed
-10
T
J
=25
℃
T
J
=125
℃
-1
-0.1
-1
-2
25
50
75
100
125
-0.2
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
JUNCTION TEMPERATURE
T
J
(
℃
)
3
Rev. –
2
.
1
Typical Characteristics
NORMALIZED TRAISIENT THERMAL IMPENDANCE
10
In descending order
D=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
D=T
ON
/T
0.1
T
J,PK
=T
C
+P
DM
×R
θJC
0.01
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
SQUARE WAVE PULSE DURATION,
tp (sec)
MAXIMUM FORWARD BIASED SAFE OPERATING AREA
1000
100
10
IDM
1us
10us
100us
1ms
10ms
R
θJC
=1.09
℃
/W
T
C
=25
℃
DC
Single pulse
BVdss
1
0.1
1
10
100
200
DRAIN TO SOURCE VOLTAGE
-V
DS
(V)
4
Rev
.
–
2.
1
Dimensions In Millimeters
Dimensions In Inches
S
y
mbol
Min.
Max.
Min.
Max.
A
0.900
1
.000
0.035
0
.039
A3
D
0.254REF.
0.010REF.
4.944
5.974
3.910
3.375
4.824
5.674
1.190
0.350
5
.096
6
.126
4
.110
3
.575
4
.976
5
.826
1
.39
0
0
.450
0.195
0.235
0.154
0.133
0.190
0.223
0.04
7
0.014
0
.201
0
.241
0
.162
0
.141
0
.196
0
.229
0
.055
0
.018
E
D1
E1
D2
E2
k
b
e
1.270TYP.
0.050TYP.
L
L1
H
0.559
0.424
0.574
0
.711
0
.576
0
.726
0.022
0.017
0.023
0
.028
0
.023
0
.029
12°
θ
10°
12°
10°
NOTICE
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
5
Rev. –
2
.
1
