Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJCD2003

JIAN

GSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  

DFN

WB2

×

3-6L-C Plastic-Encapsulate MOSFETS  

DFNWB2

×

3-6L-C  

CJCD2003  

Dual N-Channel MOSFET  

I

D  

V

(BR)DSS  

R

DS(on)

TYP  

m

6.2  

6.4  

6.8  

7.2  

8.2  

Ω

@

4

.5V  

Ω@

4

.0V  

m

18

V  

10

A

 

@

m

Ω

3

.

8

V  

@

mΩ  

V

3.1  

m

Ω@

2

.5V  

DESCRIPTION  

The CJCD2003 uses advanced trench technology to provide  

excellent R

DS(ON)

and low gate charge. It is ESD protected. This device is  

suitable for use as a uni-directional or bi-directional load switch,facilitated  

by its common-drain configuration.  

Equivalent Circuit  

MARKING:  

G2 S2  

S2  

D1/D2  

G1 S1  

S1  

Back  

Top  

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DS  

V

GS  

I

D  

18  

±12  

V

V

Gate-Source Voltage  

Continuous Drain Current  

10  

A

Pulsed Drain Current  

I

DM  

*

50  

A

Thermal Resistance from Junction to Ambient  

Junction Temperature  

R

θJA  

T

j  

83.3  

150  

℃

/W  

℃

Storage Temperature  

T

stg  

T

L  

-55~+150  

260  

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)  

℃

1

R

ev

.

–

1.

0  

MOSFET ELECTRICAL

 

CHARACTERISTICS  

unless otherwise specified  

T =25  

a

℃

Parameter  

Symbol  

Test Condition  

Min  

Typ  

Max  

Unit  

STATIC PARAMETERS  

Drain-source breakdown voltage  

Zero gate voltage drain current  

V

(BR) DSS  

I

DSS  

V

GS

= 0V, I

D

=250µA  

V

DS

=16V,V

GS

= 0V  

V

GS

=±4.5V, V

DS

= 0V  

V

GS

=±8V, V

DS

= 0V  

V

DS

=V

GS

, I

D

=250µA  

V

GS

=4.5V, I

D

=3A  

V

GS

=4.0V, I

D

=3A  

V

GS

=3.8V, I

D

=3A  

V

GS

=3.1V, I

D

=3A  

V

GS

=2.5V, I

D

=3A  

V

DS

=5V, I

D

=7A  

18  

V

1

±1  

µA  

µA  

µA  

V

Gate-body leakage current  

I

GSS  

±10  

1

Gate threshold voltage

(note 1)  

V

GS(th)  

0.4  

4.5  

4.8  

6.2  

6.4  

6.8  

7.2  

8.2  

36  

7.2  

7.5  

8.2  

9.2  

10.5  

mΩ  

mΩ  

mΩ  

mΩ  

mΩ  

S

Drain-source on-resistance

(note 1)  

R

DS(on)  

5.0  

5.5  

6.2  

9

Forward tranconductance

(note 1)  

Diode forward voltage

(note 1)  

g

FS  

1

V

SD  

I

S

=1A, V

GS

= 0V  

V

DYNAMIC PARAMETERS

(note 2)  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

pF  

pF  

pF  

nC  

nC  

nC  

1950  

250  

Output Capacitance  

V

DS

=10V,V

GS

=0V,f =1MHz  

V

DS

=10V,V

GS

=4.5V,I

D

=7A  

210  

Reverse Transfer Capacitance  

Total gate charge  

17  

2.0  

5.1  

Gate-source charge  

Q

gs  

Q

gd  

Gate-drain charge  

SWITCHING PARAMETERS

(note 2)  

Turn-on delay time  

t

d(on)  

2.2  

5.9  

40  

ns  

ns  

ns  

ns  

Turn-on rise time  

t

r  

V

GS

=5V,V

DD

=10V,  

R

L

=1.35Ω,R

GEN

=3Ω  

Turn-off delay time  

t

d(off)  

t

f  

Turn-off fall time  

90  

Drain-Source Diode Characteristics  

Diode Forward Current  

I

S  

–

–

6.0  

A

Notes :  

1. Pulse

 

T

e

st : Pulse width≤300µs, duty cycle≤0.5%.  

2. Guaranteed

 

by design, not subject to production testing.  

2

R

ev

.

–

1.

0  

7SLFDOꢀ&KDUDFWHULVWLFV  

Transfer Characteristics  

Output Characteristics  

25  

20  

15  

10  

5

10  

8

Pulsed  

V

DS

=16V  

Pulsed  

V

GS

=10V

、

3.0V

、

2V  

6

V

GS

=1.5V  

4

T

a

=100

℃  

T

a

=25

℃  

2

V

GS

=1.2V  

0

0

0

2

4

6

8

10  

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

1.4  

1.6  

DRAIN TO SOURCE VOLTAGE

 

V

DS

(V)  

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

I

D  

R

DS(ON)

——

V

GS  

——  

R

DS(ON)  

100  

80  

60  

40  

20  

0

T

a

=25

℃  

T

a

=25

℃  

Pulsed  

I

D

=8A  

Pulsed  

11  

10  

9

V

V

GS

=3.8V  

V

GS

=4.5V  

8

7

6

T

a

=100

℃  

T

a

=25

℃  

5

4

1

2

3

4

5

6

7

8

0

2

4

6

8

10  

12  

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

DRAIN CURRENT

 

I

D

(A)  

V

SD  

I

S

——  

Threshold Voltage  

750  

700  

650  

600  

550  

500  

450  

400  

350  

10  

1

T

a

=25

℃  

Pulsed  

0.1  

I

D

=250uA  

T

a

=100

℃  

T

a

=25

℃  

0.01  

1E-3  

1E-4  

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

25  

50  

75  

100  

125  

JUNCTION TEMPERATURE

 

T

J

(

℃

)  

SOURCE TO DRAIN VOLTAGE

 

V

SD

(V)  

3

R

ev

.

–

1.

0  

7SLFDOꢀ&KDUDFWHULVWLFV  

TOTAL POWER DISSIPATION vs.  

Maximum Safe Operating Area  

AMBIENT TEMPERATURE  

3

2.5  

2

100  

10  

1

it  

im  

L

)

100us  

1ms  

N

O

(

R

DS  

1

0

ms  

100ms  

Mounted on FR-4 board of  

1 inch

2

, 2oz  

1.5  

1

DC  

V

0.5  

0

0.1  

Single Pulse  

=25 C  

T

A

0.03  

0

25  

50  

75  

100 125 150

 

175  

1

10 20  

(V)  

0.1  

Ambient Temperature  

(

℃

)  

Drain-SourceVoltage  

V

DS  

T

A  

CJCD2003 R

DS(ON)

——

T

A  

20  

18  

16  

14  

12  

10  

8

6

4

2

0

–

–

60

–

–

40

–

–

20  

0

20  

40  

60  

80 100

 

120 140 160  

IT16977  

Ambient Temperature, Ta

 

–

–

°

C  

4

R

ev

.

–

1.

0  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

0.700  

0.000  

Max.  

0.800  

0.050  

Min.  

0.028  

0.000  

Max.  

0.031  

0.002  

A

A1  

A3  

D

0.203REF.  

0.008REF.  

1.950  

2.950  

1.450  

1.650  

2.050  

3.050  

1.550  

1.750  

0.077  

0.116  

0.057  

0.065  

0.081  

0.120  

0.061  

0.069  

E

D1  

E1  

k

0.200MIN.  

0.008MIN.  

b

e

L

0.200  

0.500TYP.  

0.300 0.400  

0.300  

0.008  

0.012  

0.012  

0.020TYP.  

0.016  

0.300  

1.550  

NOTICE  

JSCJ reserve

s

the right to make modifications,enhancements,improvements,corrections or other  

changes without

f

urther notice to any product herein. JSCJ does not assume any liability arising  

out of the application or use of any product described herein.  

5

R

ev

.

–

1.

0