Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJK3400A
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23
-3L
Plastic-Encapsulate MOSFETS
CJ
K
3400A
N-Channel Enhancement Mode Field Effect Transistor
I
D
V
(BR)DSS
R
DS(on)
MAX
SOT-23
-3L
@
10
V
Ω
32
m
@
V
3
0
38
m
Ω
4
.5
V
5.8
A
@
45
m
Ω
2
.
5
V
1. GATE
2. SOURCE
3. DRAIN
D
FEATURE
APPLICATION
z
High dense cell design for extremely low R
DS(ON)
z
z
Load/Power Switching
Interfacing Switching
z
Exceptional on-resistance and maximum DC current capability
Equivalent Circuit
MARKING
Solid dot =
Green molding compound device,
if none,the normal device.
Maximum ratings ( T
a
=25
℃
unless otherwise noted)
Symbol
Unit
Parameter
Value
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
I
D
30
±12
V
V
Continuous Drain Current
5.8
A
Drain Current-Pulsed
(note 1)
Power Dissipation
I
DM
P
D
30
A
450
mW
℃
/W
℃
Thermal Resistance from Junction to Ambient
(note 2)
Junction Temperature
R
θ
JA
T
J
313
150
Storage Temperature
T
STG
-55~+150
℃
1
C
,
A
ug
,201
5
MOSFET ELECTRICAL
CHARACTERISTICS
T =25
a
unless otherwise specified
℃
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-source leakage current
On characteristics (note 3)
V
(BR) DSS
DSS
GSS
V
V
V
GS
= 0V, I
D
=250µA
30
V
I
DS
=24V,V
GS
= 0V
1
µA
nA
I
GS
=±12V, V
DS
= 0V
±100
V
V
V
V
V
GS
=10V, I
GS
=4.5V, I
GS
=2.5V,I
DS
=5V, I
DS
=V
GS
, I
D
=5.8A
=5A
=4A
=5A
=250µA
32
38
45
m
Ω
m
Ω
m
Ω
S
29
32
40
Drain-source on-resistance
R
DS(on)
D
D
8
Forward tranconductance
Gate threshold voltage
Dynamic Characteristics
(note 4,5)
Input capacitance
g
FS
D
V
GS(th)
D
0.7
0.9
1.4
V
C
iss
1155
pF
pF
pF
Ω
V
DS
=15V,V
GS
=0V,f =1MHz
DS
=0V,V
GS
=0V,f =1MHz
Output capacitance
C
oss
108
84
Reverse transfer capacitance
Gate resistance
C
rss
R
g
V
3.6
Switching Characteristics
(note 4,5)
Turn-on delay time
t
d(on)
5
7
ns
ns
ns
ns
Turn-on rise time
t
r
V
GS
=10V,V
DS
=15V,
R
L
=2.7
ꢀ
,R
GEN
=3
ꢀ
Turn-off delay time
t
d(off)
40
6
Turn-off fall time
t
f
Drain-source diode characteristics and maximum ratings
1
Diode forward voltage
(note 3)
V
SD
I
S
=1A,V
GS
=0V
V
Note :
1. Repetitive
Rating : Pulse width limited by maximum junction temperature.
2. Surface
Mounted on FR4 Board, t < 5 sec.
3. Pulse
T
e
st : Pulse Width
≤
300µs, Duty Cycle
≤
2%.
4. Guaranteed
by design, not subject to production testing.
2
C,Aug,2015
Typical Characteristics
Output Characteristics
Transfer Characteristics
20
14
12
10
8
T
a
=25
℃
V
DS
=3V
Pulsed
V
GS
=3V,4V,5V,6V
18
Pulsed
16
14
12
10
8
T
a
=25
℃
T
a
=100
℃
V
GS
=2V
6
6
4
4
V
GS
=1.5V
2
2
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
V
GS
——
R
DS(ON)
I
D
——
35
150
125
100
75
Pulsed
T
a
=25
℃
Pulsed
I
D
=5A
V
GS
=2.5V
30
25
20
V
GS
=4.5V
T
a
=100
℃
50
V
GS
=10V
25
T
a
=25
℃
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
10
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
Threshold Voltage
I
S
——
V
SD
7
1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Pulsed
T
a
=75
℃
I
D
=250uA
T
a
=100
℃
T
a
=25
℃
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
JUNCTION TEMPERATURE
T
j
(
℃
)
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3
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Di
m
e
nsions In Millimeters
Di
m
e
nsions In Inches
S
y
mbol
Min.
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
Max.
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
Min.
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
Max.
0.049
0.004
0.045
0.020
0.008
0.119
0.067
0.116
A
A1
A2
b
c
D
E1
E
e
0.950(BSC)
0.037(BSC)
e1
L
1.800
0.300
0°
2.000
0.600
8°
0.071
0.012
0°
0.079
0.024
8°
ꢀ
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C,Aug,2015
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5
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C,Aug,2015
