Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJMP2011

JI

ANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  

DF

NWB2*2-6L

-J

Plastic-Encapsulate MOSFETS  

CJM

P2011

P-Channel Power MOSFET  

DFNWB2

×

2-6L-J  

I

D  

V

(BR)DSS  

R

DS(on)

MAX  

23.5

m

Ω

@

–

4.5V  

40

m

Ω

@

-2.5

V  

1. DRAIN  

2. DRAIN  

3. GATE  

-20  

V

-11

A  

4. SOURCE  

5. DRAIN  

6. DRAIN  

DESCRIPTION  

The CJM

P2011

uses advanced trench technology to provide  

excellent R

DS(on) ,

low gate charge and operation with

low

gate voltage

.  

This device is suitable for use as a load switching application  

and a wide variety of other applications.  

APPLICATIONS  

FEATURES  







PWM application  



Advanced trench MOSFET process technology  

Ultra low on-resistance with low gate charge  

Load switch  



Battery charge in cellular handset  

Equivalent Circuit  

MARKING  

Maximum ratings (T

a

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Value  

U

nit  

Drain-Source Voltage  

Gate-Source Voltage  

V

DSS  

V

GS  

I

D  

–

20  

V

±

12  

-1

1  

Drain Current

-Continuous  

A

Drain Current-Pulsed (note 1)  

Power Dissipation (note 2 )  

Thermal Resistance from Junction to Ambient  

Junction Temperature  

I

DM  

P

D  

–

44  

0.75  

W

R

θ

JA  

T

j  

167  

150  

℃

Storage Temperature  

T

STG  

-55 ~+150  

1

Rev

.

– 1.0  

026)(7ꢀꢀ(/(&75,&$/ꢀ&+$5$&7(5,67,&6  

T =25

 

unless otherwise specified  

Я

a

Parameter  

Symbol  

Test Condition  

Min  

Typ  

Max  

Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Gate-Body Leakage Current  

Zero Gate Voltage Drain Current  

On Characteristics (note

3

)  

Gate-Threshold Voltage  

V

(BR)DSS  

I

GSS  

V

GS

= 0V, I

D

=-250µA  

V

DS

=0V, V

GS

=±

12

V  

V

DS

=-

20

V, V

GS

=0V  

–

20  

V

±100  

-1  

nA  

µA  

I

DSS  

V

GS(th)  

R

DS(on)  

g

FS  

V

DS

=V

GS

, I

D

=-250µA  

V

GS

=-4.5V, I

D

=-

7

.

2

A  

V

GS

=-2.5V, I

D

=-6.

4

A  

V

DS

=-10V, I

D

=-

7

.

2

A  

-0.

4

5  

-0.85  

1

5

 

–

1

.2  

2

3.5  

40  

V

m

Ω

 

S

Drain-Source On-State Resistance  

2

2  

Forward Transconductance  

Dynamic Characteristics (note

4

)  

Input Capacitance  

16  

C

iss  

C

oss  

C

rss  

Q

g  

2

700  

680  

59

0  

35  

V

DS

=-10V,V

GS

=0V,f =1MHz  

pF  

nC  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

4

8  

V

DS

=-

6

V,V

GS

=-4.5V,I

D

=-

10

A  

Gate-Source Charge  

Q

gs  

Q

gd  

5

Gate-Drain Charge  

10  

SWITCHING CHARACTERISTICS (note 4)  

Turn-on delay time  

t

d(on)  

ns  

1

1  

35  

30  

Turn-on rise time  

Turn-off delay time  

Turn-off fall time  

t

r  

t

d(off)  

t

f  

ns  

ns  

ns  

V

GEN

=-4.5V,V

DD

=-10V,  

I

D

=-

1

A,R

g

=

10

Ω

 

1

0  

Drain-Source Diode Characteristics  

Diode Forward Current  

I

S  

-1

1  

A

V

Diode Forward Voltage

(note 3)  

V

SD  

V

GS

=0V, I

SD

=-

1.9

A  

-1.2  

Notes:  

1. Repetitive Rating: Pulse width limited by maximum junction temperature.  

2. This test is performed with no heat sink at T

a

=25

℃

.

 

3

. Pulse

T

e

st: Pulse With

≤

300

μ

s,Duty Cycle

≤

2%.  

4

. Guaranteed by design, not subject to production testing.  

2

Rev

.

-1 .0  

Typical Characteristics  

Output Characteristics  

Transfer Characteristics  

-20  

-16  

-12  

-8  

-20  

-16  

-12  

-8  

T

a

=25

℃

 

V

DS

=-3V  

Pulsed  

V

GS

=-3V,-4V,-5V  

Pulsed  

V

GS

=-2V  

T

a

=100

℃

,125

℃  

V

GS

=-1.8V  

T

a

=25

℃  

-4  

-4  

V

GS

=-1.5V  

-0  

-0  

-0  

-1  

-2  

-3  

-4  

-5  

-0  

-1  

-2  

-3  

-4  

DRAIN TO SOURCE VOLTAGE

 

V

DS

(V)  

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

R

DS(ON)

V

GS  

——  

R

DS(ON)  

I

D  

——  

40  

30  

20  

10  

0

60  

40  

20  

0

T

a

=25

℃  

Pulsed  

Pulsed  

I

D

=-6A  

V

GS

=-2.5V  

T

a

=100

℃  

T

a

=125

℃  

V

GS

=-4.5V  

T

a

=25

℃  

-1  

-2  

-3  

-4  

-5  

-6  

-7  

-8  

-9  

-10  

-0  

-2  

-4  

-6  

-8  

-10  

DRAIN CURRENT

 

I

D

(A)  

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

Threshold Voltage  

I

S

——  

V

SD  

-10  

-1.6  

-1.4  

-1.2  

-1.0  

-0.8  

-0.6  

-0.4  

-0.2  

-0.0  

Pulsed  

T

a

=100

℃  

I

D

=-250uA  

-1  

T

a

=25

℃  

T

a

=125

℃  

-0.1  

-0.0  

-0.4  

-0.8  

-1.2  

25  

50  

75  

100  

125  

SOURCE TO DRAIN VOLTAGE

 

V

SD

(V)  

JUNCTION TEMPERATURE

 

T

j

(

℃

)  

3

Rev

.

– 1.0  

DFNWB2X2-6L-J

Package Outline Dimensions  

Dimensions In Millimeters  

Di

m

e

nsions In Inches  

S

y

mbol  

Min.  

0.700  

0.000  

Max.  

0.800  

0.050  

Min.  

0.028  

0.000  

Max.  

0.032  

0.002  

A

A1  

A3  

D

0.203REF.  

0.008REF.  

1.924  

1.924  

0.800  

0.850  

0.200  

0.460  

2.076  

2.076  

1.000  

1.050  

0.400  

0.660  

0.076  

0.076  

0.031  

0.033  

0.008  

0.018  

0.082  

0.082  

0.039  

0.041  

0.016  

0.026  

E

D1  

E1  

D2  

E2  

k

0.200MIN.  

0.008MIN.  

b

e

L

0.250  

0.650TYP.  

0.174 0.326  

0.350  

0.010  

0.007  

0.014  

0.026TYP.  

0.013  

DFNWB2X2-6L-J

Suggested Pad Layout  

NOTICE  

JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other  

changes without further notice to any product herein. JSCJ does not assume any liability arising  

out of the application or use of any product described herein.  

4

Rev

.

– 1.0  

DFNWB

2

X

2

–

6

L

Tap

e

a

nd Reel  

5

Rev

.

– 1.0