Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJS8820
| Part # | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJS8820 |
Download  | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJS8820 |
GSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TSSOP8 Plastic-Encapsulate MOSFETS
Channel MOSFET
TSSOP8
I
D
V
(BR)DSS
R
DS(on)
TYP
@
10
V
mΩ
1
4
Ω
@
4
.5V
1
6
m
20V
7
A
mΩ@
3
.8V
1
8
@
2
.5V
22
mΩ
DESCRIPTION
The CJS8820 uses advanced trench technology to provide excellent
R
DS(ON)
and low gate charge. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,facilitated by its
common-drain configuration.
Equivalent Circuit
MARKING:
S8820
L
O
T No.
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
V
GS
I
D
20
±12
V
V
Gate-Source Voltage
Continuous Drain Current
7
A
Pulsed Drain Current
30
A
I
DM
*
Thermal Resistance from Junction to Ambient
Junction Temperature
R
θJA
T
j
125
℃
/W
℃
150
Storage Temperature
T
stg
T
L
-55~+150
260
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating
：
Pluse width limited by junction temperature
℃
1
Rev
.
– 1.1
MOSFET ELECTRICAL
CHARACTERISTICS
T =25
unless otherwise specified
Я
a
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
(note 1)
V
(BR) DSS
I
DSS
V
GS
= 0V, I
D
=250µA
V
DS
=16V,V
GS
= 0V
V
GS
=±10V, V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=6.6A
V
GS
=3.8V, I
D
=6A
V
GS
=2.5V, I
D
=5.5A
V
DS
=5V, I
D
=7A
20
V
µA
µA
V
1
I
GSS
±10
1.1
21
V
GS(th)
0.5
8
14
16
18
22
mΩ
mΩ
mΩ
mΩ
S
10
12
16
9
24
Drain-source on-resistance
(note 1)
R
DS(on)
28
32
Forward tranconductance
(note 1)
Diode forward voltage
(note 1)
DYNAMIC PARAMETERS
(note 2)
Input Capacitance
g
FS
1
V
SD
I
S
=1A, V
GS
= 0V
V
C
iss
C
oss
C
rss
Q
g
650
140
60
8
pF
pF
pF
nC
nC
nC
Output Capacitance
V
DS
=10V,V
GS
=0V,f =1MHz
V
DS
=10V,V
GS
=4.5V,I
D
=6A
Reverse Transfer Capacitance
Total gate charge
Gate-source charge
Q
gs
Q
gd
2.5
3
Gate-drain charge
SWITCHING PARAMETERS
(note 2)
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
0.5
1
ns
ns
ns
ns
Turn-on rise time
V
GS
=5V,V
DD
=10V,
R
L
=1.5Ω,R
GEN
=3Ω
Turn-off delay time
12
4
Turn-off fall time
Notes :
1. Pulse
T
e
st : Pulse width≤300µs, duty cycle≤0.5%.
2. Guaranteed
by design, not subject to production testing.
2
Rev
.
– 1.1
7SLFDOꢀ&KDUDFWHULVWLFV
Output Characteristics
Transfer Characteristics
20
16
12
8
20
15
10
5
Pulsed
V
DS
=5V
Pulsed
2.6V
2.4V
2.2V
2.0V
1.8V
1.5V
T
a
=100
℃
T
a
=25
℃
4
V
GS
=1.2V
5
0
0
0
1
2
3
4
6
0
1
2
3
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
—— I
D
—— V
GS
R
DS(ON)
R
DS(ON)
80
60
40
20
0
80
60
40
20
0
T
a
=25
℃
T
a
=25
℃
Pulsed
Pulsed
V
GS
=2.5V
I
D
=3A
V
GS
=10V
0
2
4
6
8
10
0
4
8
12
16
20
GATE TO SOURCE VOLTAGE
V
GS
(V)
DRAIN CURRENT
I
D
(A)
I
S
—— V
SD
Threshold Voltage
0.80
0.75
0.70
0.65
0.60
0.55
10
T
a
=25
℃
Pulsed
1
I
D
=250uA
0.1
0.01
0.4
25
50
75
100
125
0.6
0.8
1.0
1.2
AMBIENT TEMPERATURE
T
a
(
℃
)
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
3
Rev
.
– 1.1
ꢀꢁꢁꢂꢃꢄꢅꢃꢆꢇꢈꢆꢉꢊꢅꢂꢋꢌꢍꢎꢏꢊꢅꢐꢎꢑꢊꢏꢒꢎꢓꢏꢒꢅ
9vrvꢀDꢀHvyyvrrꢁ
9vrvꢀDꢀDpur
T
iy
M
i
n
Max
M
i
n
Max
9
@
i
ꢀꢁꢂꢃꢃ
ꢆꢁꢄꢃꢃ
ꢃꢁꢅꢂꢃ
ꢃꢁꢃꢂꢃ
ꢈꢁꢀꢇꢃ
ꢄꢁꢅꢃꢃ
ꢆꢁꢇꢃꢃ
ꢃꢁꢄꢃꢃ
ꢃꢁꢀꢃꢃ
ꢈꢁꢇꢇꢃ
ꢅꢁꢀꢃꢃ
ꢅꢁꢃꢃꢃ
ꢃꢁꢅꢇꢃ
ꢃꢁꢅꢅꢆ
ꢃꢁꢅꢈꢂ
ꢃꢁꢃꢃꢉ
ꢃꢁꢃꢃꢆ
ꢃꢁꢀꢆꢈ
ꢃꢁꢅꢀꢀ
ꢃꢁꢅꢉꢉ
ꢃꢁꢃꢅꢀ
ꢃꢁꢃꢃꢊ
ꢃꢁꢀꢇꢊ
ꢃꢁꢃꢆꢉ
ꢃꢁꢃꢄꢂ
ꢃꢁꢃꢃꢈ
p
@
6
6!
6
r
ꢃꢁꢊꢃꢃ
ꢃꢁꢃꢇꢃ
ꢃꢁꢃꢄꢅ
ꢃꢁꢃꢃꢀ
ꢃꢁꢈꢇ˄%6&˅
ꢃꢁꢃꢀꢈꢋ%6&ꢌ
G
ꢃꢁꢇꢃꢃ
ꢂꢃ!$ꢄU`Q
ꢃꢁꢉꢃꢃ
ꢉe
ꢃꢁꢃꢀꢃ
ꢃꢁꢃꢀꢊ
ꢉe
ꢂꢃꢂ
ꢄ
U
`
Q
+
©
ꢅe
ꢅe
ꢀꢁꢁꢂꢃꢄꢅꢁꢋꢉꢉꢊꢒꢌꢊꢔꢅꢃꢆꢔꢅꢕꢆꢖꢓꢋꢌ
ꢀ
NOTICE
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
Rev
.
– 1.1
4
