Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CS030E-30-60uA
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-
126K
Plastic-Encapsulate
T
hyristors
Sensitive Gate SCRs
CS
0
3
0
E
MAIN CHARACTERISTICS
2
A
I
T(
)
AV
TO
–
126
K
V
DRM
/
V
RRM
600
V
I
GT
μ
20
0
A
1.CATHODE
2.ANODE
3.
GATE
FEATURES
PNPN 4-layer Structure SCRs
Mesa Glass Passivated Technology
Multi Layers Metal Electrodes
Sensitive gate trigger
APPLICATIONS
Pulse Igniter
MARKING
C
S0
30E
:
Part Number
LED Controller
Coffee Machine
XXX:Internal Code
ABSOLUTE
RATINGS ( T
a
=25
℃
unless otherwise noted )
Symbol
Parameter
Unit
Test condition
Value
Repetitive peak off-
state voltage
V
V
DRM
/ V
RRM
T
j
=25
℃
TO-
126
K
(T
C
≤
8
0
℃
)
6
00
I
T(AV)
Average on-state current
RMS on-state current
2
3
A
A
I
T(RMS)
TO-
126
K
(T
C
≤
8
0
℃
)
，
Fig. 1,2
Full sine wave
，
T
j
(init)=25
℃
,
tp=20ms; Fig. 3,5
Non repetitive surge
peak on-state current
I
TSM
I
2
t
A
20
2
I
2
t value
tp=10ms
A
2
s
A/μs
Critical rate of rise of
I
G
=2*I
GT
, tr≤10ns, F=120H
Z
,
50
dI
T
/dt
T
j
=110
℃
on-state current
I
GM
Peak gate current
Average gate power
Storage temperature
0.2
0.1
A
tp=20µs, T
j
=110
℃
T
j
=110
℃
P
G(AV)
T
STG
W
–
40
~+150
℃
Operating junction
temperature
T
j
–
4
0
~+110
Rev
.
– 1.0
1
ELECTRICAL CHARACTERISTICS (T
=25
℃
unless otherwise specified)
a
Value
Symbol
Parameter
Test condition
Unit
Min
10
Nom
Max
V
D
=
6
V,
R
L
=1
0
0Ω
,
–
20
0
I
GT
V
GT
V
GD
I
H
Gate trigger current
Gate trigger voltage
μ
A
V
R
GK
=1kΩ
Fig. 6
V
D
=12V, R
L
=100Ω,
R
GK
=1kΩ
–
–
–
0.8
–
Non-triggering gate
voltage
V
D
=
1/2
V
DRM
,
R
GK
=
1k
Ω
,
T
j
=
110
℃
0.2
V
V
D
=
24
V,
R
GK
=
1k
Ω
,
3
Holding current
mA
–
–
1
I
=
4
A
,
T
j
=25
℃
, Fig. 6
I
G
=
1.2I
GT
,
Fig. 6
V
D
=67%V
DRM
TM
–
4
Latching current
I
L
mA
V/μs
V
,
Critical rate of rise
of off-state
–
–
–
d
V
D
/dt
V
TM
10
RGK=1kΩ,Tj=110
℃
–
I
TM
=
4
A , Fig. 4
On-state Voltage
1.5
5
μA
μA
V
D
=V
DRM
/V
RRM
, T
j
=25
℃
V
D
=V
DRM
/V
RRM
,T
j
=1
10
℃
–
–
–
–
Repetitive peak off-
state current
I
DRM
/
I
RRM
100
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case (AC)
7
.
2
℃
/W
TO-
126
K
TO-
126
K
Rth (j-a)
Junction to ambient
100
℃
/W
PART NUMBER
C
S
030
E
Sensitive Gate SCRs
I
=
3
A
T(RMS)
Package Type
Rev
.
– 1.0
2
CHARACTERISTICS CURVES
FIG.1: Maximum power dissipation versus RMS
on-state current (full cycle)
FIG.2: RMS on-state current versus case temperature
(full cycle)
7
4
6
5
4
3
3
2
1
2
1
0
0
-50
2
0
3
1
0
50
100
I
(A)
T(RMS)
Tc
)
FIG.3: Surge peak on-state current versus number of cycles
FIG.4: On-state characteristics (maximum values)
10
2
5
T =T
max
j
j
20
1
15
10
T =25ºC
j
0.1
5
0
0
1.0
4.0
(V)
0
2
.
0
3.0
1
10
1000
Number of cycles
100
V
TM
FIG.6: Relative variations of gate trigger current, holding
current and latching current versus junction
temperature (typical values)
FIG.5: Non-repetitive surge peak on-state current for
a sinusoidal pulse with width tp < 10ms
3.0
2.5
300
100
I
GT
2.0
1.5
I
H
&I
L
10
1.0
0.5
0.0
1
120
0.01
0.1
1
10
-40
-20
0
6
0
100
20
4
0
80
Tj
)
tp(ms)
Rev
.
– 1.0
3
