Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CT314Q-800C
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CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
63K
Plastic-Encapsulate
T
hyristors
3Q TRIACs
C
T
3
1
4
Q
MAIN CHARACTERISTICS
I
T(RMS)
1
4
A
TO
–
2
63
K
CT31
4
Q-600
S
/
C
/
B
600
V
CT31
4
Q-800
S
/
C
/
B
800
V
1.55
V
V
DRM
/
V
RRM
V
TM
1.MAIN TERMINAL
1
2.MAIN TERMINAL
2
3.GATE
FEATURES
NPNPN 5-layer Structure TRIACs
Mesa Glass Passivated Technology
Multi Layers Metal Electrodes
High Junction Temperature
Good Commutation Performance
High dV/dt
and dI/dt
APPLICATIONS
MARKING
Heater Control
Motor Speed Controller
Mixer
CT3
1
4
Q
:Series Code
600S:Depends on V
DRM
and I
GT
XXX:Internal Code
ABSOLUTE
RATINGS ( T
a
=25
℃
unless otherwise noted )
Symbol
Parameter
Unit
Test condition
Value
CT31
4
Q
-600
S
/
C
/
B
CT31
4
Q
-800
S
/
C
/
B
600
V
V
Repetitive peak off-
state voltage
V
DRM
/ V
RRM
T
j
=25
℃
800
I
T(RMS)
I
TSM
RMS on-state current
1
4
A
A
TO-
263
K
(T
C
≤10
5
℃
)
，
Fig. 1,2
Full sine wave
，
T
j
(init)=25
℃
,
tp=20ms; Fig. 3,5
Non repetitive surge
peak on-state current
1
4
0
I
2
t
I
2
t value
tp=10ms
A
2
s
A/μs
98
Critical rate of rise of
I
G
=2*I
GT
, tr≤10ns, F=120H
Z
,
Ⅰ
–
Ⅱ
–
Ⅲ
50
dI
T
/dt
T
j
=125
℃
on-state current
Ⅳ
n/a
I
GM
P
G(AV)
T
STG
T
j
Peak gate current
Average gate power
Storage temperature
4
1
A
tp=20µs, T
j
=125
℃
T
j
=125
℃
W
–
40
~+150
–
40
~+
125
℃
Operating junction
temperature
Rev
.
– 1.0
1
ELECTRICAL CHARACTERISTICS (T
=25
℃
unless otherwise specified)
a
Value
Symbol
Parameter
Test condition
Unit
S
C
B
V
D
=12V,
≤10
n/a
≤35
n/a
≤50
n/a
Ⅰ
–
Ⅱ
–
Ⅲ
I
GT
Gate trigger current
Gate trigger voltage
mA
V
R
L
=
30Ω
,
T
j
=25
℃
,
Fig. 6
Ⅳ
V
GT
Ⅰ
–
Ⅱ
–
Ⅲ
≤1.3
≥0.2
Non-triggering gate
V =V
,
RL =3.3kΩ,
D
DRM
V
GD
I
H
V
T
j
=125
℃
voltage
Holding current
≤15
≤25
≤30
≤35
≤50
≤60
mA
mA
mA
≤50
≤70
≤80
I
T
=
500m
A,
Fig. 6
Ⅰ
–
Ⅲ
Ⅱ
I
G
=
1.2I
GT
,
Latching current
I
L
Fig. 6
V
D
=67%V
DRM
, Gate
Open T
j
=125
℃
I
TM
=17A
，
tp=380μs ,
Fig. 4
Critical rate of rise
of off-state
d
V
D
/dt
V
TM
≥40
≥500
≥1000
V/μs
V
≤1.55
On-state Voltage
≤5
≤1
≤5
≤1
≤5
≤1
μA
V
D
=V
DRM
/V
RRM
, T
j
=25
℃
V
D
=V
DRM
/V
RRM
,T
j
=125
℃
Repetitive peak off-
state current
I
DRM
/
I
RRM
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case (AC)
1.
3
℃
/W
TO-2
63
K
Rth (j-a)
Junction to ambient
45
℃
/W
TO-2
63
K
PART NUMBER
CT 3
C
Q
1
4
-600
B
：
I
GT1-3≤50mA
TRIACs
C
：
I
S
：
I
≤35mA
≤10mA
GT1-3
GT1-3
3 Quadrant
Repetitive peak off-state voltage
600
：
≥ 600V
800
：
≥ 800V
I
=1
4
A
T(RMS)
Package Type
Rev
.
– 1.0
2
CHARACTERISTICS CURVES
FIG.1: Maximum power dissipation versus RMS
on-state current (full cycle)
FIG.2: RMS on-state current versus case temperature
(full cycle)
14
12
15
10
8
10
5
6
4
2
0
0
0
2
4
6
8
10
12
T(RMS)
14
-50
0
50
100
150
)
I
(A)
Tc
FIG.3: Surge peak on-state current versus number of cycles
FIG.4: On-state characteristics (maximum values)
100
10
1
140
120
T =125ºC
j
100
80
60
40
20
T =25ºC
j
0
2.5
1.5
2.0
0.5
1.0
3.0
3.5
4.0
4.5
V
5.0
(V)
0
10
100
1000
Number of cycles
TM
FIG.6: Relative variations of gate trigger current, holding
current and latching current versus junction
temperature (typical values)
FIG.5: Non-repetitive surge peak on-state current for
a sinusoidal pulse with width tp < 10ms
2.5
2.0
1000
I
GT
1.5
1.0
100
I
H
&I
L
0.5
0.0
10
0.01
0.1
1
10
-40
-20
0
20
40
60
80
100
120
140
Tj
)
tp(ms)
Rev
.
– 1.0
3
