Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CT408R-800C
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-2
6
2K
Plastic-Encapsulate
T
hyristors
4Q TRIACs
C
T
4
08
R
MAIN CHARACTERISTICS
I
T(RMS)
8
A
TO
–
2
6
2
K
CT40
8
R-600S/C
CT40
8
R-800S/C
600
V
800
V
1.55
V
V
DRM
/
V
RRM
V
TM
1.MAIN TERMINAL
1
2.MAIN TERMINAL
2
3.GATE
FEATURES
NPNPN 5-layer Structure TRIACs
Mesa Glass Passivated Technology
Multi Layers Metal Electrodes
High Junction Temperature
Good Commutation Performance
APPLICATIONS
MARKING
Heater Control
Motor Speed Controller
Mixer
CT
408R
:Series Code
600S:Depends on V
DRM
and I
GT
XXX:Internal Code
ABSOLUTE
RATINGS ( T
a
=25
℃
unless otherwise noted )
Symbol
Parameter
Unit
Test condition
Value
CT408
R
-600
S/C
CT408
R
-800
S/C
600
V
V
Repetitive peak off-
state voltage
V
DRM
/ V
RRM
T
j
=25
℃
800
8
I
T(RMS)
I
TSM
RMS on-state current
A
A
TO-2
6
2
K
(T ≤1
05
℃
)
，
Fig. 1,2
C
Non repetitive surge
peak on-state current
Full sine wave
，
T
j
(init)=25
℃
,
80
36
tp=20ms; Fig. 3,5
I
2
t
I
2
t value
tp=10ms
A
2
s
A/μs
Critical rate of rise of
I
G
=2*I
GT
, tr≤10ns, F=120H
Z
,
Ⅰ
–
Ⅱ
–
Ⅲ
50
10
dI
T
/dt
T
j
=125
℃
on-state current
Ⅳ
I
GM
P
G(AV)
T
STG
T
j
Peak gate current
Average gate power
Storage temperature
2
A
tp=20µs, T
j
=125
℃
T
j
=125
℃
0.5
W
–
40
~+150
–
40
~+
125
℃
Operating junction
temperature
Rev
.
– 1.0
1
ELECTRICAL CHARACTERISTICS (T
=25
℃
unless otherwise specified)
a
Value
Symbol
Parameter
Test condition
Unit
S
C
V
D
=12V,
≤
8
≤
2
0
≤
3
5
Ⅰ
–
Ⅱ
–
Ⅲ
I
GT
Gate trigger current
Gate trigger voltage
mA
V
I
T
=1A,
T
j
=25
℃
,
Fig. 6
Ⅳ
≤10
V
GT
Ⅰ
–
Ⅱ
–
Ⅲ
–
Ⅳ
≤1.3
≥0.2
Non-triggering gate
voltage
V
GD
I
H
V
V =V
D
DRM
,
T
j
=125
℃
V
D
=12V,
I
GT
=0.1A,
T
j
=25
℃
,
Fig. 6
Holding current
≤10
≤15
≤20
≤20
≤25
≤35
mA
mA
mA
Ⅰ
–
Ⅱ
–
Ⅲ
–
Ⅳ
Ⅰ
–
Ⅲ
–
Ⅳ
Ⅱ
Latching current
I
L
V
D
=67%V
DRM
, Gate
Open T
j
=125
℃
I
TM
=
10
A
，
tp=380μs ,
Fig. 4
Critical rate of rise
of off-state
d
V
D
/dt
V
TM
≥10
≥20
V/μs
V
≤1.55
On-state Voltage
≤5
≤1
≤5
≤1
μA
V
D
=V
DRM
/V
RRM
, T
j
=25
℃
V
D
=V
DRM
/V
RRM
,T
j
=125
℃
Repetitive peak off-
state current
I
DRM
/
I
RRM
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case (AC)
1.6
℃
/W
TO-
2
6
2K
TO-2
6
2K
Rth (j-a)
Junction to ambient
45
℃
/W
PART NUMBER
CT 4
08
C
R
-600
TRIACs
I
,
≤10mA
I
≤
8
mA GT4
：
S
GT1-3
I
I
C
：
≤
2
0mA
≤
3
5mA
GT4
GT1-3
4 Quadrant
Repetitive peak off-state voltage
600
：
≥ 600V
800
：
≥ 800V
I =8A
T(RMS)
Package Type
Rev
.
– 1.0
2
CHARACTERISTICS CURVES
FIG.1: Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case temperature
(full cycle)
on-state current (full cycle)
12
9
8
10
8
7
6
5
4
6
4
3
2
2
1
0
0
0
2
4
6
8
-50
0
50
100
150
)
I
(A)
T(RMS)
Tc
FIG.3: Surge peak on-state current versus number of cycles
FIG.4: On-state characteristics (maximum values)
25
80
60
T
j
=125ºC
20
15
10
5
40
20
0
T
j
=25ºC
0
0.5
1.0
1.5
2.0
2.5
3.0
(V)
0
10
100
1000
Number of cycles
V
TM
FIG.6: Relative variations of gate trigger current, holding
current and latching current versus junction
temperature (typical values)
FIG.5: Non-repetitive surge peak on-state current for
a sinusoidal pulse with width tp < 10ms
1000
3.0
2.5
2.0
1.5
1.0
100
10
I
GT
I
H
I
L
0.5
0.0
T
j
(ºC)
0.01
0.1
1
10
-40
-20
0
20
40
60
80
100
120
140
Tj
)
tp(ms)
Rev
.
– 1.0
3
