Jiangsu-Changjing-Electronics-Technology-Co—Ltd–EMH10-HAF
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NGJING ELECTRONICS TECHNOLOGY CO., LTD
Transistors (Built-in Resistors)
Dual Digital Transistors (NPN+NPN)
EMH10
SOT-563
FEATURES
z
z
z
z
Two DTC123J chips in a package
.
Mounting possible with SOT-563 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area be cut in half.
Marking: H10
Absolute maximum ratings(Ta=25
℃
)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
Limits
50
Unit
V
V
IN
-5~12
100
V
I
O
mA
mW
℃
Output current
I
C(MAX)
Pd
100
150
Power dissipation
Operation Junction
and
Storage Temperature Range
-55~
+
150
T
J
,
T
stg
Electrical characteristics (Ta=25
℃
)
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
V
I(off)
V
I(on)
V
O(on)
I
I
0.5
V
CC
=5V, I
O
=100
μ
A
Input voltage
V
1.1
0.3
3.6
0.5
V
O
=0.3V, I
O
=5mA
Output voltage
Input current
0.1
V
I
O
/I
I
=5mA/0.25mA
mA
μ
A
V
I
=5V
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
I
O(off)
G
I
V
CC
=50V, V
I
=0
80
1.54
17
V
O
=5V, I
O
=10mA
R
1
2.2
21
2.86
26
K
Ω
–
R
2
/R
1
f
T
–
250
MHz
V
CE
=10V, I
E
=5mA, f=100MHz
1
Rev
.
–
2
.0
SO
T
–
56
3 Package Outline Dimensions
SO
T
–
56
3 Suggested Pad Layout
NOTICE
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
2
Rev
.
–
2
.0
