Jiangsu-Changjing-Electronics-Technology-Co—Ltd–FMMT493
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
JC
E
T
FMMT493
TRANSISTOR (NPN)
SOT
–
23
FEATURES
Complementary Type FMMT593
MARKING:493
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
1. BASE
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
2. EMITTER
3. COLLECTOR
Collector-Base Voltage
120
V
Collector-Emitter Voltage
Emitter-Base Voltage
100
V
5
Collector Current
1000
250
mA
mW
℃
/W
℃
Collector Power Dissipation
Thermal Resistance From Junction
T
o Ambient
Junction
T
e
m
perature
P
C
R
ΘJA
T
j
500
150
Storage
T
e
m
perature
T
stg
-55
～
+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
V
(BR)CBO
I
C
=100µA, I
E
=0
V
(BR)CEO
I
C
=10mA, I
B
=0
V
(BR)EBO
I
E
=100µA, I
C
=0
120
100
5
V
Collector-base breakdown voltage
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
I
CBO
I
CES
V
CB
=100
V
,
I
E
=0
V
CES
=100V, I
E
=0
V
EB
=4
V
,
I
C
=0
0.1
0.1
0.1
µA
µA
µA
Collector cut-off current
I
EBO
Emitter cut-off current
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
*
*
*
*
V
CE
=10
V
,
I
C
=1mA
V
CE
=10
V
,
I
C
=250mA
V
CE
=10
V
,
I
C
=0.5A
V
CE
=10
V
,
I
C
=1A
100
100
60
300
DC current gain
20
V
CE(sat)1
V
CE(sat)2
*
*
I
C
=500mA, I
B
=50mA
I
C
=1A, I
B
=100mA
0.3
0.6
1.15
1
V
V
Collector-emitter saturation voltage
V
BE(sat)
V
BE
*
f
T
*
I
C
=1A, I
B
=100mA
V
Base-emitter saturation voltage
Base-emitter voltage
V
CE
=10
V
,
I
C
=1A
V
V
CE
=10
V
,
I
C
=50mA, f=100MHz
V
CB
=10
V
,
I
E
=0, f=1MHz
150
MHz
pF
Transition frequency
C
ob
10
Collector output capacitance
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
1
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Typical Characteristics
h
FE
—— I
C
Static Characteristic
8
6
4
2
0
400
350
300
250
200
150
100
V
CE
= 10V
COMMON
EMITTER
T
a
=25
℃
T
a
=100
o
C
30uA
27uA
24uA
21uA
18uA
15uA
12uA
T
a
=25
o
C
9uA
6uA
I
B
=3uA
0
2
4
6
8
10
12
14
1
10
100
1000
1000
1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—— I
C
V
BEsat
—— I
C
1000
800
600
400
200
1000
100
10
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
0.1
1
10
100
1000
0.1
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
f
T
——
I
C
—— V
BE
I
C
180
1000
160
140
120
100
80
100
10
1
T
a
=100
o
C
T
a
=25
℃
60
40
V
CE
=10V
T
a
=25
o
20
V
CE
=10V
900
C
0
0.1
0
20
40
60
80
100
100
200
300
400
500
600
700
800
COLLECTOR CURRENT
I
C
(mA)
BASE-EMITTER VOLTAGE
V
BE
(mV)
P
c
—— T
a
300
250
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
3
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