Jiangsu-Changjing-Electronics-Technology-Co—Ltd–KTA1023-RANGE-120-240
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
JC
E
T
TO-92L
KTA1023
TRANSISTOR (PNP)
1. EMITTER
FEATURES
Complementary to KTC1027
2. COLLECTER
3. BASE
MAXIMUM RATINGS (T
a
B
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
Parameter
Value
-120
-120
-5
Unit
B
B
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
B
B
V
EBO
I
C
P
C
T
J
T
stg
B
B
V
B
B
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
-0.8
A
B
B
1
W
℃
℃
B
B
150
B
B
Storage
T
e
mperature
-55to+150
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
T
e
st conditions
I
C
=-10
μ
A,I
E
=0
M
in
-120
-120
-5
T
yp
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
B
B
B
B
V
I
C
=-10mA,I
B
=0
B
B
V
(BR)EBO
B
V
I
E
=-1mA,I
C
=0
B
B
I
CBO
I
EBO
h
FE
-0.1
-0.1
240
-1.0
-1.0
μ
A
μ
A
V
CB
=-120
V
,
I
E
=0
V
EB
=-5
V
,
I
C
=0
DC current gain
80
V
CE
=-5
V
,
I
C
=-100mA
I
C
=-500mA,I
B
=-50mA
I
C
=-500mA, V
CE
=-5V
Collector-emitter saturation voltage
Base-emitter voltage
V
CE
(sat)
V
BE
f
T
V
V
Transition frequency
120
MHz
V
CE
=-5
V
,
I
C
=-100mA
B
Collector output capacitance
Cob
40
pF
V
CE
=-10
V
,
I
E
=0,f=1MHz
B
CLASSIFICATION OF
h
FE
Rank
O
Y
80
–
160
120
–
240
Range
1
A
B,
J
O
u
c
n
t,2014
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
3.750
1.280
0.380
0.620
0.350
4.750
4.000
7.850
Max.
4.050
1.580
0.550
0.780
0.450
5.050
Min.
0.148
0.050
0.015
0.024
0.014
0.187
0.157
0.309
Max.
0.159
0.062
0.022
0.031
0.018
0.199
A
A1
b
b1
c
D
D1
E
8.150
0.321
e
1.270 T
Y
P
.
0.050 T
Y
P
.
e1
L
Φ
h
2.440
13.800
2.640
14.200
1.600
0.300
0.096
0.543
0.104
0.559
0.063
0.012
0.000
0.000
B,Oct,2014
2
