Jiangsu-Changjing-Electronics-Technology-Co—Ltd–KTA1666-RANGE-120-240
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
KTA1666
TRANSISTOR (PNP)
1. BASE
FEATURES
2. COLLECTOR
z
z
z
z
Complementary to KTC4379
Small Flat Package
3. EMITTER
Low Saturation Voltage
Power Amplifier and Switching Application
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
-50
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-50
V
-5
V
Collector Current
-2
A
P
C
Collector Power Dissipation
Thermal Resistance From Junction
T
o
A
mbient
Junction
T
e
mperature
500
mW
℃
/
W
℃
R
θ
JA
T
j
250
150
T
stg
Storage
T
e
mperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
= -1mA,I
E
=0
Min
-50
-50
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=-10mA,I
B
=0
V
I
E
=-1mA,I
C
=0
V
V
CB
=-50
V
,
I
E
=0
-100
-100
240
nA
nA
Emitter cut-off current
I
EBO
V
EB
=-5
V
,
I
C
=0
h
FE(1)
*
*
V
CE
=-2
V
,
I
C
=-500mA
V
CE
=-2
V
,
I
C
=-1.5A
I
C
=-1A,I
B
=-50mA
I
C
=-1A,I
B
=-50mA
V
CB
=-10
V
,
I
E
=0, f=1MHz
V
CE
=-2V,I
C
= -500mA
70
40
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
V
CE(sat)
V
BE(sat)
C
ob
*
-0.5
-1.2
40
V
V
*
pF
f
T
120
MHz
*Pulse test: pulse width
≤
300mS, duty cycle
≤
2.0%.
CLASSIFICATION OF h
FE(1)
O
Y
RANK
RANGE
70
–
140
WO
120
–
240
WY
MARKING
B,May,2013
Typical Characteristics
KTA1666
h
FE
—— I
C
Static Characteristic
-1.0
600
500
400
300
200
100
0
V
CE
= -2V
COMMON
EMITTER
T
a
=25
℃
-4.5mA
-5.0mA
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-0.0
-4.0mA
-3.5mA
-3.0mA
-2.5mA
T
a
=100
o
C
-2.0mA
-1.5mA
-1.0mA
T
a
=25
o
C
I
B
=-0.5mA
-0
-1
-2
-3
-4
-5
-6
-7
-8
-1E-3
-0.01
-0.1
-1
-2
COLLECTOR CURRENT
I
C
(A)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—— I
C
V
BEsat
—— I
C
-1000
-800
-600
-400
-200
-0
-600
-500
-400
-300
-200
-100
-0
β
=20
β
=20
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
-2
-1E-4
-1E-3
-0.01
-0.1
-1
-2
-1E-3
-0.01
-0.1
-1
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
P
c
—— T
a
f
T
——
I
C
160
0.75
0.50
0.25
0.00
140
120
100
80
60
40
V
CE
=-2V
20
T
a
=25
o
C
0
-0
-20
-40
-60
-80
-100
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
COLLECTOR CURRENT
I
C
(mA)
B,May,2013
