Jiangsu-Changjing-Electronics-Technology-Co—Ltd–KTC4375-RANGE-120-240
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89
-3L
Plastic-Encapsulate Transistors
SOT-89
-3L
KTC4375
TRANSISTOR (NPN)
1.
BASE
FEATURES
Low voltage
2.
COLLECTOR
3.
EMITTER
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Value
Unit
30
V
Collector-Base Voltage
V
CEO
V
EBO
I
C
Collector-Emitter Voltage
Emitter-Base Voltage
30
5
V
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
1.5
A
P
C
0.5
W
℃
℃
T
J
150
-55
~
150
T
stg
Storage
T
e
mperature
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
T
e
st conditions
Min
30
30
5
Typ
Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=1mA,I
E
=0
V
(BR)CEO
I
C
=10mA,I
B
=0
V
(BR)EBO
I
E
=1mA,I
C
=0
V
V
V
I
CBO
I
EBO
h
FE
V
CB
=30
V
,
I
E
=0
0.1
0.1
320
2
μ
A
μ
A
Emitter cut-off current
V
EB
=5
V
,
I
C
=0
DC current gain
V
CE
=2
V
,
I
C
=0.5A
I
C
=1.5A,I
B
=30mA
V
CE
=2
V
,
I
C
=0.5A
V
CE
=2
V
,
I
C
=500mA
V
CB
=10
V
,
I
E
=0,f=1MHz
100
Collector-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
V
BE
V
V
1
Transition frequency
f
T
120
MHz
pF
Collector output capacitance
C
ob
40
CLASSIFICATION OF
h
FE(1)
Rank
O
Y
100-200
GO
160-320
GY
Range
Marking
1
D
,
No
v
,
2015
Typical Characteristics
h
FE
—— I
C
Static Characteristic
1000
800
600
400
200
0
600
400
V
CE
= 2V
COMMON
EMITTER
T
a
=25
℃
3.0mA
T
a
=100
o
C
2.7mA
2.4mA
2.1mA
1.8mA
1.5mA
200
1.2mA
0.9mA
0.6mA
I
B
=0.3mA
T
a
=25
o
C
1500
1000
0
1
2
3
4
5
6
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—— I
C
V
BEsat
—— I
C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
350
300
250
200
150
100
50
β
=50
β
=50
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
0
0.1
1
10
100
10001500
1
10
100
1000
1500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
C
ob
/ C
ib
——
f
T
——
V
CB
/
V
EB
I
C
250
1000
100
10
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
o
C
200
150
100
50
C
ib
C
ob
V
CE
=2V
T
a
=25
o
C
0
20
0
20
40
60
80
100
0.1
1
10
REVERSE VOLTAGE
V
(V)
COLLECTOR CURRENT
I
C
(mA)
V
BE
——
I
C
P
c
—— T
a
1.0
1500
1000
Ta=100
o
C
100
10
1
0.5
Ta=25
℃
VCE=2V
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
BASE-EMITTER VOLTAGE
V
BE
(V)
2
D
,
No
v
,
2015
SO
T
–
89-3L
Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.600
0.520
0.580
0.440
4.600
Min
Max
0.063
0.020
0.023
0.017
0.181
A
b
b1
c
1.400
0.320
0.400
0.350
4.400
0.055
0.013
0.016
0.014
0.173
D
D1
E
E1
e
e1
L
1.550 REF.
0.061 REF.
2.300
3.940
2.600
4.250
0.091
0.155
0.102
0.167
1.500 T
Y
P
.
3.000 T
Y
P
.
0.060 T
Y
P
.
0.118 T
Y
P
.
0.900
1.200
0.035
0.047
SO
T
–
89-3L
Suggested Pad Layout
3
D
,
No
v
,
2015
