Jiangsu-Changjing-Electronics-Technology-Co—Ltd–KTD1898-RANGE-120-240
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
KTD1898
TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
z
z
Small Flat Package
General Purpose Application
3. EMITTER
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
100
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
80
V
5
V
Collector Current
1
A
P
C
Collector Power Dissipation
Thermal Resistance From Junction
T
o
A
mbient
Junction
T
e
mperature
500
mW
℃
/
W
℃
R
θ
JA
T
j
250
150
T
stg
Storage
T
e
mperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
=0.1mA,I
E
=0
Min
100
80
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=1mA,I
B
=0
V
I
E
=0.1mA,I
C
=0
5
V
V
CB
=80
V
,
I
E
=0
1
1
µA
µA
Emitter cut-off current
I
EBO
V
EB
=4
V
,
I
C
=0
DC current gain
h
FE
V
CE
=3
V
,
I
C
=500mA
I
C
=500mA,I
B
=20mA
V
CB
=10
V
,
I
E
=0, f=1MHz
70
400
0.4
Collector-emitter saturation voltage
Collector output capacitance
V
CE(sat)
C
ob
V
20
pF
V
CE
=10V,I
C
=50mA,
f=100MHz
f
T
100
MHz
Transition frequency
CLASSIFICATION OF
h
FE
RANK
RANGE
O
70
–
140
ZO
Y
GR
120
–
240
200
–
400
MARKING
ZY
ZG
A,Nov,2010
