Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MCR100-6
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
S
O
T
–
8
9
-3L
Plastic-Encapsulate
Thyristors
S
O
T-89
-3L
MCR100- 6
,
– 8
Silicon
Controlled Rectifier
1.KATHODE
2.
ANODE
3.
GATE
FEATURES
Current-I
GT
: 200
µ
A
TRMS
: 0.8
A
I
V
RRM
/
V
DRM
: MCR100-6
:
400 V
MCR100-8
:
600 V
Operating and storage junction temperature range
T
J
，
T
stg
: -55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS
（
Ta=25
℃
unless otherwise specified
）
Parameter
On state voltage
Symbol
Test conditions
I
TM
=1A
V
AK
=7V
M
in
M
ax
1.7
U
nit
V
*
V
TM
Gate trigger voltage
V
GT
0.8
V
Peak Repetitive forward and reverse
blocking voltage
V
DRM
I
DRM
= 1
0
µ
A
V
AND
MCR100-6
400
600
V
RRM
MCR100-8
Peak forward or reverse blocking
Current
I
DRM
I
RRM
V
AK
= Rated
10
µA
V
or V
RRM
DRM
Holding current
I
H
I
HL
= 20mA ,
V
AK
= 7V
5
mA
µA
µA
A2
A1
5
15
30
15
Gate trigger current
I
GT
V
AK
=7V
A
B
30
80
80
µA
µA
200
* Forward current applied for 1 ms maximum duration
，
duty cycle
≤
1%
。
B
,
May
,201
3
