Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MJD117

Part #Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MJD117
Download 
Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MJD117
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-25
2-2L
Plastic-Encapsulate Transistors  
MJD117
TRANSISTOR (PNP)  
TO
–
252
-2L  
FEATURES  
1. BASE  
z
z
High DC Current Gain  
Electrically Similar to Popular TIP117  
2. COLLECTOR  
3. EMITTER  
2
1
3
ꢀꢁꢂꢃꢄꢅꢆ  
MJD117
ꢀ’ꢁ#ꢂ”ꢁꢃ”ꢄꢅꢁꢃ
 
ꢆꢄꢇꢂꢅꢃꢅꢄꢈꢀꢉꢊꢁꢁ ꢃ!ꢄꢇꢅꢂ  ꢃ”ꢄ!ꢋꢄꢌ ꢅꢃꢅꢁ#ꢂ”ꢁ$ꢃ
 
ꢃ
 
ꢂ(ꢃ ꢄ ꢁ$ꢈ)ꢁꢃ ꢄꢊ!ꢍꢇꢃꢅꢁ#ꢂ”ꢁ
 
XXXX=Code  
MJD117  
XXXX  
MAXIMUM RATINGS (T

a

=25
℃
unless otherwise noted)  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  
Collector-Base Voltage  
Value  
-100  
-100  
-5  
Unit  
V
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
V
Collector Current  
-2  
A
P

C  

Collector Power Dissipation  
1.75  
72  
W
R

θ
JA  

T

J

,
T

stg  

Thermal Resistance From Junction
T
o
A
mbient  
Operation Junction and Storage Temperature Range  
℃
/
W  
℃
-55~+150  
1
Rev
.
–
2
.
2
 

ELECTRICAL CHARACTERISTICS (T

a

=25
℃
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
-100  
-100  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V

(BR)CBO  

I

C

=-1mA,I

E

=0  
*
V

(BR)CEO  

I

C

=-30mA,I

B

=0  
V
V

(BR)EBO  

I

CBO  

I

E

=-5mA,I

C

=0  
V
V

CB

=-80
V
,
I

E

=0  
-10  
-10  
-2  
μA  
μA  
mA  
Collector cut-off current  
I

CE
O
 

V

CE

=-80
V
,
I

B

=0  
Emitter cut-off current  
I

EBO  

V

EB

=-5
V
,
I

C

=0  
*
h

FE(1)  

V

CE

=-3
V
,
I

C

=-0.5A  
V

CE

=-3
V
,
I

C

=-2A  
V

CE

=-3
V
,
I

C

=-4A  
I

C

=-2A,I

B

=-8mA  
I

C

=-4A,I

B

=-40mA  
I

C

=-4A,I

B

=-40mA  
V

CE

=-3
V
,
I

C

=-2A  
V

CB

=-10
V
,
I

E

=0, f=0.1MHz  
V

CE

=-10
V
,
I

C

=-0.75A, f=1MHz  
500  
1000  
200  
*
DC current gain  
h

FE(2)  

12000  
*
h

FE(3)  

-2  
-3  
V
V
*
Collector-emitter saturation voltage  
V

CE(sat)  

*
Base-emitter saturation voltage  
Base-emitter voltage  
Collector output capacitance  
Transition frequency  
*Pulse test  
V

BE(sat)  

-4  
V
*
-2.8  
200  
V
V

BE  

pF  
MHz  
C

ob  

f

T  

25  
2
Rev
.
–
2.
2
 

TO-252-2L Package
 
Outline Dimensions  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min.  
2.200  
0.000  
0.635  
0.460  
6.500  
5.100  
Max.  
2.400  
0.127  
0.770  
0.580  
6.700  
5.460  
Min.  
0.087  
0.000  
0.025  
0.018  
0.256  
0.201  
Max.  
0.094  
0.005  
0.030  
0.023  
0.264  
0.215  
A
A1  
b
c
D
D1  
D2  
E
e
L
4.830 REF.  
0.190 REF.  
6.000  
2.186  
9.712  
6.200  
2.386  
10.312  
0.236  
0.086  
0.382  
0.244  
0.094  
0.406  
L1  
L2  
L3  
L4  
Φ
θ
2.900 REF.  
0.114 REF.  
0.063 REF.  
1.400  
1.700  
0.055  
0.067  
1.600 REF.  
0.600  
1.100  
0°  
1.000  
1.300  
8°  
0.024  
0.043  
0°  
0.039  
0.051  
8°  
h
0.000  
0.300  
0.000  
0.012  
V
5.250 REF.  
0.207 REF.  
TO-252-2L Suggested Pad Layout  
NOTICE  
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other  
changes without further notice to any product herein. JSCJ does not assume any liability arising  
out of the application or use of any product described herein.  
Rev
.
–
2.
2
 
3

TO-25
2-2L
Tape and Reel  
4
Rev
.
–
2.
2