Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MJD41C
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-
25
2-2L
Plastic-Encapsulate Transistors
MJD41C
TRANSISTOR (NPN)
TO-25
2
-2L
FEATURES
z
Designed for
G
eneral
P
urpose
A
mplifier and
L
ow
S
peed
1.
BASE
S
witching
A
pplications.
2
z
Lead Formed for Surface Mount Applications in Plastic
2.
COLLECTOR
3.
EMITTER
1
Sleeves (No Suffix)
3
z
z
z
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm
T
a
pe and Reel (“T4” Suffix)
Electrically Similar to Popular TIP41 and TIP42 Series
z
Monolithic Construction With Built–in Base–Emitter Resistors
ꢀꢁꢂꢃꢄꢅꢆ
Equivalent Circuit
MJD41C
ꢀ’ꢁ#ꢂ”ꢁꢃ”ꢄꢅꢁꢃ
ꢆꢄꢇꢂꢅꢃꢅꢄꢈꢀꢉꢊꢁꢁ ꢃ!ꢄꢇꢅꢂ ꢃ”ꢄ!ꢋꢄꢌ ꢅꢃꢅꢁ#ꢂ”ꢁ$ꢃ
ꢃ
ꢂ(ꢃ ꢄ ꢁ$ꢈ)ꢁꢃ ꢄꢊ!ꢍꢇꢃꢅꢁ#ꢂ”ꢁ
MJD41C
XXXX
XXXX=Code
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
100
100
5
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current -Continuous
Collector Current -Pluse
Collector Power Dissipation
6
A
A
*
I
C
P
10
P
C
1.25
W
Operati
ng
Junction and
Temperature Range
Storage
T
J,
T
stg
℃
–
5
5-150
1
Rev
.
–
2.
1
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
T
e
st conditions
Min Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=100μA,I
E
=0
V
CEO
(sus)
I
C
=30mA,I
B
=0
V
(BR)EBO
I
E
=100μA,I
C
=0
100
100
5
V
V
I
CEO
I
EBO
V
CB
=60
V
,
I
E
=0
50
μA
mA
Emitter cut-off current
V
EB
=5V I
C
=0
0.5
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
V
CE
=4V I
C
=0.3A
V
CE
=4
V
,
I
C
=3A
30
15
DC current gain
75
1.5
2
Collector-emitter saturation voltage
Base-emitter voltage
I
C
=6A,I
B
=0.6A
V
V
V
CE
=4
V
,
I
C
=6A
Transition frequency
f
T
V
CE
=10
V
,
I
C
=500mA,f=1MHz
3
MHz
* Pulse Test: PW
≤
300
µ
s, Duty Cycle
≤
2%
2
Rev
.
–
2.
1
Typical Characteristics
I
C
h
FE
——
Static Characteristic
4000
3500
3000
2500
2000
1500
1000
500
200
100
COMMON
EMITTER
T
a
=25
℃
50mA
45mA
T
a
=100
℃
40mA
35mA
T
a
=25
℃
30mA
25mA
20mA
15mA
10mA
I
B
=5mA
COMMON EMITTER
CE
=4V
V
0
10
0.1
0
1
2
3
4
5
6
7
8
9
10
1
10
100
1000
6000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
I
C
I
C
V
BEsat
——
1
1.2
1.0
0.8
0.6
0.4
0.2
T
a
=25
℃
0.1
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β=10
β=10
0.01
0.1
1
10
100
1000
6000
0.1
1
10
100
1000
6000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
V
CB
/ V
EB
C
ob
/ C
ib
——
6000
10000
1000
100
COMMON EMITTER
V
CE
=4V
f=1MHz
I
E
=0/I
C
=0
1000
100
10
T
a
=25
℃
C
ib
C
ob
1
0.1
0.2
10
0.1
20
0.4
0.6
0.8
1.0
1.2
1
10
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(V)
I
C
f
T
——
P
C
—— T
a
100
10
1
2500
2000
1500
1000
500
V
CE
=10V
T
a
=25
℃
0
50
100
1000
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
3
Rev
.
–
2.
1
TO-252-2L Package
Outline Dimensions
D
A
D1
c
h
φ
A1
D2
b
e
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
2.200
0.000
0.635
0.460
6.500
5.100
Max.
2.400
0.127
0.770
0.580
6.700
5.460
Min.
0.087
0.000
0.025
0.018
0.256
0.201
Max.
0.094
0.005
0.030
0.023
0.264
0.215
A
A1
b
c
D
D1
D2
E
e
L
4.830 REF.
0.190 REF.
6.000
2.186
9.712
6.200
2.386
10.312
0.236
0.086
0.382
0.244
0.094
0.406
L1
L2
L3
L4
Φ
θ
2.900 REF.
0.114 REF.
0.063 REF.
1.400
1.700
0.055
0.067
1.600 REF.
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.250 REF.
0.207 REF.
TO-252-2L Suggested Pad Layout
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
Rev
.
–
2.
1
4
