Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MMBT5401-G-RANGE-200-300
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
JC
E
T
MMBT5401
TRANSISTOR (PNP)
SOT
–
23
FEATURES
Complementary to MMBT5551
Ideal for Medium Power Amplification and Switching
1. BASE
MARKING: 2L
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
-160
-150
-5
Unit
V
Collector-Base Voltage
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
Collector Current
-0.6
A
P
C
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction
T
e
mperature
0.3
W
R
Θ
JA
T
j
416
℃
/W
℃
150
T
stg
Storage
T
e
mperature
-55
～
+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
I
C
=-100µA, I
E
=0
Min
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
-160
-150
-5
*
V
(BR)CEO
I
C
=-1mA, I
B
=0
V
V
(BR)EBO
I
CBO
I
E
=-10µA, I
C
=0
V
V
CB
=-120
V
,
I
E
=0
-0.1
-0.1
μ
A
μ
A
Emitter cut-off current
I
EBO
V
EB
=-4
V
,
I
C
=0
*
h
FE(1)
V
CE
=-5
V
,
I
C
=-1mA
V
CE
=-5
V
,
I
C
=-10mA
V
CE
=-5
V
,
I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-5
V
,
I
C
=-10mA, f=30MHz
80
100
50
*
DC current gain
h
FE(2)
300
*
h
FE(3)
*
V
CE(sat)1
-0.2
-0.5
-1
V
V
Collector-emitter saturation voltage
*
V
CE(sat)2
*
V
BE(sat)1
V
Base-emitter saturation voltage
Transition frequency
*
V
BE(sat)2
-1
V
f
T
100
MHz
*Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2.0%.
CLASSIFICATION OF
h
FE (2)
RANK
L
H
RANGE
100-200
200-300
1
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Typical Characteristics
h
FE
—— I
C
Static Characteristic
-20
-18
-16
-14
-12
-10
-8
300
250
200
150
100
50
V
CE
=-5V
-100uA
-90uA
COMMON
EMITTER
T
a
=25
℃
T
a
=100
o
C
-80uA
-70uA
-60uA
T
a
=25
o
C
-50uA
-40uA
-6
-30uA
-20uA
-4
-2
I
B
=-10uA
-0
0
-600
-0
-3
-6
-9
-1
-10
-100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—— I
C
V
BEsat
—— I
C
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
-1
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
-0.1
T
a
=100
℃
T
a
=25
℃
-0.01
-0.1
-600
-600
-0.1
-1
-10
-100
-1
-10
-100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
V
——
V
CB
/
V
EB
C
ob
/ C
ib
——
C
BE
-100
100
V
CE
=-5V
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
o
C
Cib
-10
T
a
=100
o
C
10
T
a
=25
℃
-1
Cob
-0.1
-0.0
1
-0.5
-0.2
-0.4
-0.6
-0.8
-1.0
-1
-10
REVERSE VOLTAGE
V
(V)
BASE-EMITTER VOLTAGE
V
BE
(V)
I
C
f
T
——
P
c
—— T
a
300
250
200
150
100
50
0.4
0.3
0.2
0.1
0.0
VCE=-5V
T
a
=25
o
C
0
-0
-5
-10
-15
-20
-25
-30
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
Ta (
℃
)
COLLECTOR CURRENT
I
C
(mA)
2
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SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
3
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