Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MMBTA28
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23
Plastic-Encapsulate Transistors
MMBTA28
TRANSISTOR (NPN)
SOT
–
23
FEATURES
High Current Gain
1. BASE
MARKING: 3SS
3SS
= Device code
Solid dot = Green molding
compound device.
2. EMITTER
3. COLLECTOR
3 S S
Equivalent Circuit
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Collector-Base Voltage
Value
Unit
V
80
V
V
V
CEO
V
EBO
I
C
Collector-Emitter Voltage
80
12
Emitter-Base Voltage
Collector Current
500
mA
mW
℃
/W
℃
Collector Power Dissipation
200
P
C
Thermal Resistance From Junction
T
o Ambient
Operation Junction and Storage Temperature Range
R
ΘJA
T
J
,
T
stg
625
-55
～
+150
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
V
(BR)CBO
I
C
=100µA, I
E
=0
80
V
Collector-base breakdown voltage
V
CEO
(sus)
V
(BR)EBO
I
CBO
I
C
=100µA, V
BE
=0
I
E
=10µA, I
C
=0
80
12
V
V
Collector-emitter sustain voltage
Emitter-base breakdown voltage
Collector cut-off current
V
CB
=60
V
,
I
E
=0
0.1
0.5
0.1
µA
µA
µA
K
I
CES
V
CE
=60
V
, V
BE
=0
V
EB
=10
V
,
I
C
=0
Collector cut-off current
I
EBO
Emitter cut-off current
h
FE(1)
h
FE(2)
*
*
V
CE
=5
V
,
I
C
=10mA
V
CE
=5
V
,
I
C
=100mA
I
C
=10mA, I
B
=0.01mA
I
C
=100mA, I
B
=0.1mA
V
CE
=5
V
,
I
C
=100mA
V
CB
=1
V
,
I
E
=0, f=1MHz
V
CE
=5
V
,
I
C
=10mA,
f=100MHz
10
10
DC current gain
K
V
CE(sat)1
V
CE(sat)2
V
BE
*
*
*
1.2
1.5
2
V
Collector-emitter saturation voltage
V
V
Base-emitter voltage
C
ob
8
pF
Collector output capacitance
f
T
125
MHz
Transition frequency
*Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%.
1
Rev
.
–
2
.
2
Typical Characteristics
h
FE
—— I
C
Static Characteristic
250
200
150
100
50
1000
100
10
4.0uA
3.6uA
3.2uA
COMMON
EMITTER
T
a
=25
℃
V
CE
= 5V
2.8uA
2.4uA
2.0uA
1.6uA
T
a
=100
o
C
1.2uA
T
a
=25
o
C
0.8uA
I
B
=0.4uA
0
0
2
4
6
8
10
1
1
1
10
100
500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—— I
C
V
BEsat
—— I
C
2.0
1.5
1.0
0.5
1200
1000
800
600
400
200
0
β
=1000
β
=1000
T
a
=100
℃
T
a
=25
℃
T
a
=25
℃
T
a
=100
℃
500
500
1
10
100
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
—— V
CB
/
V
EB
500
400
300
200
100
0
15
12
9
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
o
C
C
ib
T
a
=100
o
C
6
T
a
=25
℃
C
ob
3
V
CE
=5V
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
20
REVERSE VOLTAGE
V
(V)
BASE-EMITTER VOLTAGE
V
BE
(V)
P
c
—— T
a
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
2
Rev
.
–
2
.
2
SOT-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
6°
SOT-23 Suggested Pad Layout
NOTICE
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
Rev
.
–
2
.
2
3
