Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MMDT2227-RANGE-160-400
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
MMDT2227
TRANSISTOR (NPN+PNP)
SOT-363
FEATURE
C1
B2
z
Epitaxial planar die construction
One 2222A NPN
E2
z
One 2907A PNP
z
Ideal for power amplification and switching
E1
B1
MARKING: K27
C2
NPN 2222A
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Para
m
eter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
alue
Units
75
V
40
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
600
200
150
-55-150
mA
mW
℃
P
C
T
J
T
stg
Storage
T
e
mperature
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
T
e
st conditions
I
C
= 10
μ
A, I
E
=0
M
in
75
40
6
M
ax
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
= 10mA, I
B
=0
V
I
E
=10
μ
A.I
C
=0
V
V
CB
= 60
V
,
I
E
=0
10
10
10
nA
nA
nA
Collector cut-off current
I
CEX
V
CE
= 60
V
,
V
EB(
o
ff)
=3V
V
EB
= 3
V
,
I
C
=0
Emitter cut-off current
I
EBO
*
h
FE(1)
V
CE
=10
V
,
I
C
= 0.1mA
V
CE
=10
V
,
I
C
= 1mA
V
CE
=10
V
,
I
C
= 10mA
V
CE
=10
V
,
I
C
= 150mA
V
CE
=10
V
,
I
C
= 500mA
V
CE
=1
V
,
I
C
= 150mA
I
C
=150mA, I
B
= 15mA
I
C
=500mA, I
B
= 50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
= 50mA
35
50
*
h
FE(2)
*
h
FE(3)
75
DC current gain
*
h
FE(4)
100
40
300
*
h
FE(5)
*
h
FE(6)
35
*
V
CE(sat)1
0.3
1
V
V
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
*
V
CE(sat)2
*
V
BE(sat)1
0.6
1.2
2
*
V
BE(sat)2
V
CE
=20
V
,
I
C
= 20mA,
f
T
300
MHz
f=100MHz
Output Capacitance
Input Capacitance
C
ob
C
ib
V
CB
=10
V
,
I
E
=0,f=1MHz
V
EB
=0.5
V
,
I
C
= 0,f=1MHz
V
CE
=10
V
,
I
C
=100
μ
A,
f=1KHz,Rs=1K
Ω
8
pF
pF
25
Noise Figure
NF
4
dB
*
pulse test
A,Dec,2010
Switching characteristics
Pa
r
ameter
Delay time
Rise time
Symbol
Test c
o
nditions
M
i
n
M
ax
10
Unit
nS
t
d
t
r
25
nS
V
CC
=30
V
,
I
C
=150mA,
V
BE(off)
=0.5
V
,
I
B1
=15mA
Storage time
Fall time
t
S
t
f
225
60
nS
nS
PNP 2907A
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Para
m
eter
V
alue
-60
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-60
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
Storage
T
e
mperature
-600
200
mA
mW
℃
P
C
T
J
150
T
stg
-55-150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
= -10
μ
A, I
E
=0
M
in
M
ax
U
nit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
-60
-60
-5
I
C
= -10mA, I
B
=0
V
V
I
E
=-10
μ
A, I
C
=0
V
CB
=-50
V
,
I
E
=0
-10
-50
-10
nA
nA
nA
Collector cut-off current
I
CEX
V
CE
=-30
V
,
V
EB(
o
ff)
=-0.5V
V
EB
=-3
V
,
I
C
=0
Emitter cut-off current
I
EBO
*
h
FE(1)
V
CE
=-10
V
,
I
C
= -0.1mA
V
CE
=-10
V
,
I
C
= -1mA
V
CE
=-10
V
,
I
C
=-10mA
V
CE
=-10
V
,
I
C
= -150mA
V
CE
=-10
V
,
I
C
=-500mA
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=- 50mA
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
= -50mA
V
CE
=-20
V
,
I
C
= -50mA,
f=
100MHz
V
CB
=-10
V
,
I
E
= 0,
f=
1MHz
V
EB
=-2
V
,
I
C
= 0,
f=
1MHz
75
100
100
100
50
*
h
FE(2)
*
DC current gain
h
FE(3)
*
h
FE(4)
300
*
h
FE(5)
*
V
CE sat)1
(
-0.4
-1.6
-1.3
-2.6
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
*
*
*
V
CE(sat)2
V
BE(sat)1
V
V
BE(sat)2
V
Transition frequency
Output Capacitance
Input Capacitance
Delay time
200
MHz
pF
pF
nS
nS
nS
nS
f
T
C
ob
C
ib
t
d
8
30
10
40
225
60
Rise time
t
r
V
CC
=-30
V
,
I
C
=-150mA, I
B1
=-15mA
Storage time
Fall time
t
s
t
f
*
pulse test
A,Dec,2010
