Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MMDT3904
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
JC
E
T
MMDT3904
DUAL TRANSISTOR (NPN+NPN)
SOT-363
FEATURES
z
z
Epitaxial planar die construction
Ideal for low power amplification and switching
MARKING:K6N
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Value
60
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
V
EBO
I
C
40
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
Storage
T
e
mperature
0.2
A
P
C
0.2
W
℃
℃
T
J
150
-55-150
T
stg
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
T
e
st conditions
Min
60
40
5
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=10
μ
A,I
E
=0
V
(BR)CEO
I
C
=1mA,I
B
=0
V
(BR)EBO
I
E
=10
μ
A,I
C
=0
V
V
V
I
CBO
I
EBO
V
CB
=30
V
,
I
E
=0
0.05
0.05
0.05
μ
A
μ
A
μ
A
Emitter cut-off current
V
EB
=5
V
,
I
C
=0
Collector cut-off current
I
C
EX
V
C
E
=30
V
,
V
BE(off)
=
3V
V
CE
=1
V
,
I
C
=0.1mA
V
CE
=1
V
,
I
C
=1mA
V
CE
=1
V
,
I
C
=10mA
V
CE
=1
V
,
I
C
=50mA
V
CE
=1
V
,
I
C
=100mA
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
40
70
DC current gain
100
60
300
30
V
CE(sat)1
I
C
=10mA,I
B
=1mA
V
CE(sat)2
I
C
=50mA,I
B
=5mA
V
BE(sat)1
I
C
=10mA,I
B
=1mA
V
BE(sat)2
I
C
=50mA,I
B
=5mA
0.2
0.3
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.65
300
0.85
0.95
V
V
Transition frequency
V
CE
=20
V
,
I
C
=10mA,f=100MHz
MHz
pF
f
T
Collector output capacitance
C
ob
NF
V
CB
=5
V
,
I
E
=0,f=1MHz
4
Noise figure
Delay time
Rise time
V
CE
=5
V
,
I
c
=0.1mA,f=1kHz,R
S
=1K
Ω
5
dB
nS
nS
35
35
t
d
t
r
V
CC
=3
V
,
V
BE(off)
=-0.5V
I
C
=10mA , I
B1
=-I
B2
= 1mA
Storage time
Fall time
200
50
nS
nS
t
s
t
f
V
CC
=3
V
,
I
C
=10mA
I
B1
=-I
B2
=1mA
1
A
D,
J
M
u
a
n
r
,
,
2
2
0
0
1
1
4
6
Typical Characteristics
h
FE
—— I
C
Static Characteristic
14
12
10
8
300
250
200
150
100
50
V
CE
= 1V
COMMON
EMITTER
T
a
=25
℃
70uA
T
a
=100
o
C
63uA
56uA
49uA
42uA
35uA
28uA
21uA
14uA
6
T
a
=25
o
C
4
2
I
B
=7uA
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
200
1.0
0.1
1
10
100
200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—— I
C
V
BEsat
—— I
C
1.0
0.8
0.6
0.4
0.2
400
300
200
100
0
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
200
0.1
1
10
100
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
P
c
—— T
a
I
C
—— V
BE
300
200
100
0
200
100
T
a
=100
o
C
10
T
a
=25
℃
1
V
CE
=1V
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
BASE-EMITTER VOLTAGE
V
BE
(V)
2
A
D,
J
M
u
a
n
r
,
,
2
2
0
0
1
1
4
6
SO
T
-3
6
3 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.100
0.100
1.000
0.350
0.150
2.200
1.350
2.4
00
Min
Max
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.150
0.
100
2.000
1.150
2.150
0.035
0.000
0.035
0.006
0.00
4
0.079
0.045
0.085
0.043
0.004
0.039
0.014
0.006
0.087
0.053
0.09
4
0.650 T
Y
P
0.525 REF
0.026 T
Y
P
0.021 REF
1.200
1.400
0.047
0.055
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
SO
T
-3
6
3 Suggested Pad Layout
3
A
D,
J
M
u
a
n
r
,
,
2
2
0
0
1
1
4
6
