Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MMDT4403-RANGE-100-300
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
JC
E
T
DUAL TRANSISTOR (PNP+PNP)
MMDT4403
SOT-363
FEATURES
z
Epitaxial Planar Die Construction
z
Ideal for Low Power Amplification and Switching
MRKING:K2T
Maximum Ratings
(Ta=25
℃
unless otherwise specified)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
-40
Units
V
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
T
hermal Resistance
from
Junction to Ambient
Junction
T
e
mperature
-0.6
A
P
C
0.2
W
R
θ
JA
T
J
625
℃
/W
℃
150
T
stg
Storage
T
e
mperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
M
in
-40
-40
-5
Typ
Max
U
nit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=-100
μ
A ,
I
E
=0
V
(BR)CEO
I
C
= -1mA ,
I
B
=0
I
C
=0
V
V
(BR)EBO
I
E
=-100
μ
A,
V
I
CBO
I
CEO
V
CB
=-50
V
,
I
E
=0
V
CE
=-35
V
,
I
B
=0
V
EB
=-5
V
,
I
C
=0
-0.1
-0.5
-0.1
μ
A
μ
A
μ
A
Collector cut-off current
Emitter cut-off current
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
V
CE
=-1
V
,
I
C
= -0.1mA
V
CE
=-1
V
,
I
C
= -1mA
V
CE
=-1
V
,
I
C
= -10mA
V
CE
=-2
V
,
I
C
= -150mA
V
CE
=-2
V
,
I
C
= -500mA
30
60
DC current gain
100
100
20
300
V
CE(sat)1
I
C
=-150 mA, I
B
=-15mA
V
CE(sat)2
I
C
=-500 mA, I
B
=-50mA
V
BE(sat)1
I
C
= -150 mA, I
B
=-15mA
V
BE(sat)2
I
C
= -500 mA, I
B
=-50mA
-0.4
-0.75
-0.95
-1.3
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
-0.75
200
V
V
Transition frequency
Output
c
apacitance
Delay time
f
T
C
ob
t
d
V
CE
= -10
V
,
I
C
=-20mA,f = 100MHz
MHz
pF
nS
nS
nS
nS
V
CB
=-10
V
,
I
E
=0,f=1MHz
8.5
15
V
CC
=-30
V
,
V
BE
=-2
V
,
I
C
=-150mA ,
I
B1
=-15mA
Rise time
t
r
20
Storage time
Fall time
t
S
t
f
225
30
V
CC
=-30
V
,
I
C
=-150mA
B1
=- I
B2
= -15mA
1
E,Nov,2015
Typical Characteristics
I
C
h
FE
——
T
a
=100
℃
T
a
=25
℃
Static Characteristic
-180
1000
100
10
-1mA
COMMON EMITTER
–
900
uA
-800uA
-700uA
T
a
=25
℃
-150
-120
-90
-60
-30
-0
-600uA
-500uA
-400uA
-300uA
-200uA
COMMON EMITTER
V
CE
=-2V
I
=-100uA
B
1
-0
-1
-2
-3
-0.1
-1
-10
-100
-600
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
BEsat
—— I
C
V
CEsat
—— I
C
-1000
-100
-10
-5000
T
a
=100
℃
T
a
=25
℃
-1000
T
a
=25
℃
T
a
=100
℃
β
=10
β
=10
-1
-100
-0.1
-1
-10
-100
-0.1
-1
-10
-100
-600
-600
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
—— V
CB
/ V
EB
100
10
1
-600
f=1MHz
I
E
=0/ I
C
=0
COMMON EMITTER
V
CE
=-2V
T
a
=25
℃
C
ib
-100
-10
-1
C
ob
T
a
=100
℃
T
a
=25
℃
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-0.1
-1
-10
-20
BASE-EMMITER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
P
c
—— T
a
f
T
—— I
C
250
1000
200
150
100
50
100
COMMON EMITTER
V
CE
=-10V
T
a
=25
℃
0
10
-1
-10
-100
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
E,Nov,2015
SO
T
-3
6
3 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.100
0.100
1.000
0.350
0.150
2.200
1.350
2.450
Min
Max
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.150
0.080
2.000
1.150
2.150
0.035
0.000
0.035
0.006
0.003
0.079
0.045
0.085
0.043
0.004
0.039
0.014
0.006
0.087
0.053
0.096
0.650 T
Y
P
0.525 REF
0.026 T
Y
P
0.021 REF
1.200
1.400
0.047
0.055
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
SO
T
-3
6
3 Suggested Pad Layout
3
E,Nov,2015
