Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MPSA05

J

IANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  

TO-92 Plastic-Encapsulate Transistors  

TO – 92  

MPSA05

TRANSISTOR (NPN)  

1.EMITTER  

2.BASE  

FEATURES  

General Purpose Amplifier  

ꢀ

3.COLLECTOR  

ꢀꢁꢆ1ꢃꢈꢉ  

Equivalent Circuit  

ꢆꢇꢈꢉꢄꢃꢑꢟꢔꢛꢎꢘꢔꢐꢘꢌꢏꢔ  

ٞ

MPSꢁ2ꢏ  

333  

ꢀ

ꢈꢌꢍꢎꢏꢐꢏꢌꢅꢑꢒꢓꢔꢔꢕꢐꢖꢌꢍꢏꢎꢕꢗꢐꢘꢌꢖꢙꢌꢚꢕꢏꢐꢏꢔꢛꢎꢘꢔꢜꢐ  

ꢐꢎꢠꢐꢕꢌꢕꢔꢜꢅꢡꢔꢐꢕꢌꢓꢖꢢꢍꢐꢏꢔꢛꢎꢘꢔ  

ꢝꢝꢝꢑꢞꢌꢏꢔ  

ꢀ

ꢤꢆꢦꢥꢆꢃꢈꢉꢅꢃꢈꢩꢤꢆꢀꢁꢇꢃꢤꢈ  

ꢠꢌꢘꢖꢅꢈꢐꢞꢟꢓꢘꢅ  

ꢠꢌꢪꢫꢌꢧꢓꢅ  

TO-92  

ꢠꢌꢪꢫꢚꢑꢧꢅꢀꢓꢖꢗꢕꢛꢅ  

ꢠꢌꢪꢫꢅꢬꢐꢌꢑꢖꢚꢖꢝꢅ  

ٞ

Bulk  

1000pcs/Bag  

2000pcs/Box  

TO-92  

ꢆ

T

a

pe  

ꢀꢁꢂꢃꢀꢄꢀꢅꢆꢁꢇꢃꢈꢉꢊꢅꢋꢇ

ꢌ

ꢍꢎꢏ

ꢀ

ꢅꢐꢑꢒꢓꢔꢔꢅꢕꢖꢗꢓꢘꢙꢚꢔꢓꢅꢑꢕꢖꢓꢛꢜꢅ  

ꢄꢑꢚꢖꢅ  

V

ꢊꢝꢞꢟꢕꢒꢅ  

ꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅ ꢠꢌꢘ

ꢌ

ꢞ

ꢓꢖꢓꢘꢅ  

ꢡꢌꢒꢐꢓꢅ  

6

0

 

ꢡ

ꢢꢣꢤ  

ꢡ

ꢢꢥꢤ  

ꢡ

ꢥꢣꢤ  

ꢃ

ꢢ

ꢅ  

ꢅ

ꢅ

ꢅ

Colle

c

tor

–

Base Voltage  

Colle

c

tor

–

Emitter Voltage  

Emitter

–

Base Voltage  

6

0  

V

4

V

Colle

c

tor Current

–

Continuous  

Colle

c

tor Po

w

er Dissipation  

Thermal Resis

t

a

n

c

e

ɍ

rom Jun

c

tion

ꢅ

o  

0

.5  

625  

A

ꢠ

ꢦ  

ꢆ

ꢅ

mW  

ꢀ

/

W  

Ambient  

2

00  

Operation Junction

 

and Storage Temperature Range  

T

J

,

ꢇ

ꢔꢖꢧ  

ꢅ

–

5

5

ꢀꢁꢂꢃꢄ  

ꢀ

1

Rev

.

–

2.0  

ꢥ4ꢥꢢꢇꢆꢃꢢꢁ4ꢅꢢ5ꢁꢆꢁꢢꢇꢥꢆꢃꢊꢇꢃꢢꢊ  

T =ꢭꢮ

 

unless otherwise specified  

ꢀ

a

Parameter  

Symbol  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Test  

conditions  

Min  

60  

60  

4

Typ  

Max  

Unit  

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

I

C

= 0

.

1

m

A,I

E

=0  

I

C

=1

m

A,I

B

=0  

V

I

E

=0

.

1

m

A,I

C

=0  

V

V

CB

=60

V

,

I

E

=0  

0

.

1  

0

.

1  

1

ꢀ

A  

ꢀ

A  

ꢀ

A  

Collector cut-off current  

I

CEO  

V

CE

=60

V

,

I

B

=0  

Emitter cut-off current  

I

EBO  

V

EB

=3

V

,

I

C

=0  

h

FE(1)  

h

FE(2)  

V

CE(sat)  

V

BE  

V

CE

=1

.

0

V

,

I

C

=100

m

A  

V

CE

=1

.

0

V

,

I

C

=10

m

A  

I

C

=100

m

A,I

B

=10

m

A  

I

C

=100

m

A, V

CE

=1

.

0V  

V

CE

=2

.

0

V

,

I

C

=10

m

A,f=100MHz  

100  

100  

DC current gain  

Collector-emitter saturation voltage  

Base-emitter voltage  

0

.

25  

1

.

2  

V

V

f

T  

100  

MHz  

Transition frequency  

2

Rev

.

–

2.0  

ꢇꢤ89ꢎꢅꢠꢌꢪꢫꢌꢧꢓꢅꢤꢐꢖꢒꢚꢑꢓꢅꢦꢚꢞꢓꢑꢔꢚꢕꢑꢔꢅ  

ꢦꢚꢞꢓꢑꢔꢚꢕꢑꢔꢅꢃꢑꢅꢀꢚꢒꢒꢚꢞꢓꢖꢓꢘꢔ  

ꢦꢚꢞꢓꢑꢔꢚꢕꢑꢔꢅꢃꢑꢅꢃꢑꢪꢗꢓꢔ  

ꢊꢝꢞꢟꢕꢒ  

ꢀꢚꢑ  

ꢀꢌ3  

3.700  

1.400  

0.550  

0.510  

ꢀꢚꢑ  

ꢀꢌ3  

0.146  

0.055  

0.022  

0.020  

A

A1  

b

3.300  

1.100  

0.380  

0.360  

4.

ꢣꢄꢄ  

3.430  

4.300  

0.130  

0.043  

0.015  

0.014  

c

D

D1  

E

4.700

ꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢄꢤꢂꢥꢦꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢐꢄꢤꢂꢧꢃ  

0.135  

0.169  

4.700  

0.185  

e

e1  

L

ꢀ

h

1.270 T

Y

P  

0.050 T

Y

P  

2.440  

14.100  

2.640  

14.500  

1.600  

0.380  

0.096  

0.555  

0.104  

0.571  

0.063  

0.015  

0.000  

0.000  

ꢇꢤ89ꢎꢅꢊꢐꢧꢧꢓꢔꢖꢓꢛꢅꢠꢌꢛꢅ4ꢌꢝꢕꢐꢖ

ꢀ

 

NOTICE  

JSCJ reserve

s

the right to make modifications,enhancements,improvements,corrections or other  

changes without

f

urther notice to any product herein. JSCJ does not assume any liability arising  

out of the application or use of any product described herein.  

3

Rev

.

–

2.0  

ꢇꢤ89ꢎꢅ

7DSHꢀDQGꢀ5HHO  

4

Rev

.

–

2.0