Jiangsu-Changjing-Electronics-Technology-Co—Ltd–PXT2222A-RANGE-100-300
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89
-3L
Plastic-Encapsulate Transistors
PXT2222A
TRANSISTOR (NPN)
SOT-89
-3L
FEATURES
1.
BASE
z
Epitaxial planar die construction
z
Complementary PNP Type available(PXT2907A)
2.
COLLECTOR
3.
EMITTER
MAXIMUM RATINGS (
T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Value
75
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
40
V
V
CEO
V
EBO
I
C
Emitter-Base Voltage
Collector Current -Continuous
6
600
V
mA
Collector Power Dissipation
Junction
T
e
mperature
Storage
T
e
mperature
0.5
150
W
℃
℃
P
C
T
J
-55
~
150
T
stg
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
M
in
75
40
6
M
ax
U
nit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
= 10
μ
A,I
E
=0
I
C
= 10mA, I
B
=0
V
I
E
=10
μ
A, I
C
=0
V
V
CB
=60
V
,
I
E
=0
0. 01
0. 01
μ
A
μ
A
Emitter cut-off current
I
EBO
V
EB
= 5V , I
C
=0
h
FE(1)
V
CE
=10
V
,
I
C
= 0.1mA
V
CE
=10
V
,
I
C
= 1mA
V
CE
=10
V
,
I
C
= 10mA
V
CE
=10
V
,
I
C
= 150mA
V
CE
=1
V
,
I
C
= 150mA
V
CE
=10
V
,
I
C
= 500mA
I
C
=500mA, I
B
= 50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=
1
5mA
35
50
h
FE(2)
h
FE(3)
75
DC current gain
h
FE(4)
100
50
300
h
FE(5)
h
FE(6)
40
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
1
V
V
V
V
Collector-emitter saturation voltage
0.3
2.0
1.2
Base-emitter saturation voltage
Transition frequency
0.6
V
CE
=10
V
,
I
C
=20mA
f=100MHz
f
T
300
MHz
Output Capacitance
Delay time
C
ob
t
d
8
pF
n
s
n
s
n
s
n
s
V
CB
=10
V
,
I
E
= 0,f=1MHz
10
25
225
60
V
CC
=30
V
,
I
C
=150mA
V
BE(off)
=0.5
V
,
I
B1
=15mA
Rise time
t
r
Storage time
Fall time
t
S
t
f
V
CC
=30
V
,
I
C
=150mA
I
B1
=- I
B2
= 15mA
B,Apr,2012
PXT2222A
Typical Characteristics
h
FE
——
I
C
Static Characteristic
0.25
1000
100
10
COMMON
EMITTER
T
a
=25
℃
1mA
900uA
0.20
0.15
0.10
0.05
0.00
T
a
=100
℃
T
a
=25
℃
800uA
700uA
600uA
500uA
400uA
300uA
200uA
COMMON EMITTER
V
CE
= 10V
I
B
= 100uA
0
1
0
2
4
6
8
10
12
14
16
1
1
1
0
10
100
600
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
V
BEsat
——
I
C
I
C
1000
100
10
1200
900
T
a
=25
℃
600
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β
=10
β
=10
300
500
600
1200
20
600
10
100
10
100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
I
C
——
f
T
——
V
BE
600
100
100
10
1
COMMON EMITTER
V
CE
=10V
COMMON EMITTER
V
CE
= 10V
T
a
=25
℃
0.1
10
300
600
900
10
100
COLLECTOR CURRENT
I
C
(mA)
BESE-EMMITER VOLTAGE
V
BE
(mV)
V
CB
/V
EB
C
ob
/C
ib
——
P
C
—— T
a
100
10
1
600
500
400
300
200
100
0
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
C
ob
0.1
1
10
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Apr,2012
