Jiangsu-Changjing-Electronics-Technology-Co—Ltd–S9012-RANGE-144-202
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
T
O-92 Plastic-Encapsulate Transistors
TO-92
S9012
TRANSISTOR (PNP)
FEATURES
1. EMITTER
z
Complementary to S9013
Excellent h
FE
linearity
2. BASE
z
3. COLLECTOR
MAXIMUM RATINGS
(T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Para
m
eter
Value
-40
Units
V
Collector-Base Voltage
-25
V
Collector-Emitter Voltage
Emitter-Base Voltage
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
-500
625
mA
mW
℃
P
C
T
J
150
T
stg
Storage
T
e
mperature
-55-150
℃
ELECTRICAL CHARA
C
TERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
T
e
st conditions
I
C
= -100
μ
A, I
E
=0
I
C
= -1mA,I
B
=0
Min
-40
-25
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
I
E
=-100
μ
A, I
C
=0
V
CB
=-40
V
,
I
E
=0
-0.1
-0.1
-0.1
400
-0.6
-1.2
μ
A
μ
A
μ
A
Collector cut-off current
I
CEO
V
CE
=-20
V
,
I
B
=0
Emitter cut-off current
I
EBO
V
EB
= -5
V
,
I
C
=0
DC current gain
h
FE
V
CE
=-
1
V
,
I
C
=-
50
mA
I
C
=-500mA, I
B
= -50mA
I
C
=-500mA, I
B
= -50mA
64
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
V
V
V
CE
=-6
V
,
I
C
= -20mA
f=
30MHz
Transition frequency
f
T
150
MHz
CLASSIFIC
A
T
ION OF h
FE
Rank
D
E
F
G
H
I
J
Range
64-91
78-112
96-135
112-166
144-202
190-300
300-400
C,Agu
,2011
S9012
Typical Characteristics
V
CE
I
C
——
I
C
h
FE
——
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
500
-20uA
COMMON
EMITTER
T
a
=25
℃
T
a
=100
℃
-18uA
-16uA
-14uA
T
a
=25
℃
-12uA
-10uA
-8uA
-6uA
-4uA
I
B
=-2uA
100
V
CE
=-1V
10
-0
-2
-4
-6
-8
-10
-12
-1
-10
-100
-500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
I
C
V
BEsat
——
V
CEsat
——
I
C
-1200
-500
-800
-100
β
=10
β
=10
-10
-400
-500
-1
-10
-100
-500
-1
-10
-100
-500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
f
T
——
I
C
I
C
—— V
BE
400
-100
100
-10
COMMON EMITTER
V
CE
=-6V
COMMON EMITTER
V
CE
=-1V
T
a
=25
℃
10
-1
-1
-10
-100
-0
-300
-600
-900
-1200
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VOLTAGE
V
BE
(mV)
C
ob
/C
ib
—— V
CB
/V
EB
P
C
—— T
a
700
600
500
400
300
200
100
0
50
C
ib
C
ob
10
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
1
-0.1
0
25
50
75
100
125
150
-1
-10
-20
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
C,Agu
,2011
