Jiangsu-Changjing-Electronics-Technology-Co—Ltd–S9013-J3-RANGE-200-350
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9013
TRANSISTOR (NPN)
SOT
–
23
FEATURES
High Collector Current.
z
z
Complementary
to
S9012.
z
Excellent
h
FE
Linearity.
1. BASE
MARKING: J3
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
Collector-Base Voltage
40
V
Collector-Emitter Voltage
Emitter-Base Voltage
25
V
5
Collector Current
500
mA
mW
℃
/W
℃
P
C
Collector Power Dissipation
Thermal Resistance From Junction
T
o
A
mbient
Junction
T
e
mperature
300
R
Θ
JA
T
j
416
150
T
stg
Storage
T
e
mperature
-55
～
+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
conditions
Min
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=0.1mA, I
E
=0
40
25
5
I
C
=1mA, I
B
=0
V
I
E
=0.1mA, I
C
=0
V
V
CB
=40
V
,
I
E
=0
0.1
0.1
0.1
400
uA
uA
uA
Collector cut-off current
I
CEO
V
CE
=20
V
,
I
B
=0
Emitter cut-off current
I
EBO
V
EB
=5
V
,
I
C
=0
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
V
CE
=1
V
,
I
C
=50mA
V
CE
=1
V
,
I
C
=500mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CB
=1
V
,
I
C
=10mA,
V
CE
=6
V
,
I
C
=20mA, f=30MHz
V
CB
=6
V
,
I
E
=0, f=1MHz
120
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
0.6
1.2
0.7
V
V
V
Transition frequency
f
T
150
MHz
pF
Collector output capacitance
C
ob
8
CLASSIFICATION OF
h
FE(1)
RANK
L
H
J
RANGE
120-200
200-
350
300-400
B
,Nov,201
1
Typical Characterisitics
S9013
h
FE
—— I
C
Static Characteristic
100
80
60
40
20
0
1000
COMMON EMITTER
V
CE
=1V
COMMON
EMITTER
T
a
=25
℃
400uA
350uA
300uA
250uA
200uA
T
a
=100
℃
T
a
=25
℃
100
150uA
100uA
I
B
=50uA
10
1
3
10
30
100
500
0
4
8
12
16
20
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
I
C
V
BEsat
——
V
CEsat
—— I
C
1.2
500
300
T
a
=25
℃
0.8
0.4
100
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
30
10
β
=10
β
=10
0.0
30
10
500
3
1
3
10
30
100
1
100
500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
——
V
CB
/ V
EB
100
100
COMMON EMITTER
V
CE
=1V
f=1MHz
I
E
=0/ I
C
=0
30
10
T
a
=25
℃
C
ib
30
10
T
a
=100
℃
C
ob
3
1
T
a
=25
℃
3
1
0.3
0.1
0.1
0.3
1
3
10
20
0.0
0.2
0.4
0.6
0.8
1.0
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(V)
P
C
—— T
a
f
T
—— I
C
1000
400
V
CE
=6V
T
a
=25
℃
300
200
100
0
300
100
10
10
30
100
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Nov,2011
