Jiangsu-Changjing-Electronics-Technology-Co—Ltd–S9013-TA-RANGE-190-300
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S9013
TRANSISTOR (NPN)
TO-92
FEATURES
z
z
Complementary to S9012
Excellent h
FE
linearity
1. EMITTER
2. BASE
MAXIMUM RATINGS
(T
a
=25
℃
unless otherwise noted)
3. COLLECTOR
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pa
ram
eter
Value
40
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
25
5
V
V
500
mA
mW
℃
P
C
625
T
J
Junction
T
e
mperature
Storage
T
e
mperature
150
T
stg
-55-150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
T
e
st conditions
I
C
= 100
μ
A , I
E
=0
I
C
= 1mA ,
I
B
=0
M
in
40
25
5
T
yp
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)
CBO
V
(BR)
CEO
V
V
(BR)
EBO
I
E
= 100
μ
A , I
C
=0
V
CB
= 40V ,
I
E
=0
V
CE
=20V ,
I
E
=0
V
μ
A
I
CBO
I
CEO
0.1
0.1
0.1
400
μ
A
μ
A
Collector cut-off current
Emitter cut-off current
I
EBO
V
EB
= 5V, I
C
=0
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
CE
=1
V
,
I
C
=50mA
V
CE
=1
V
,
I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
64
40
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
0.6
1.2
V
V
Transition frequency
V
CE
=6
V
,
I
C
=20mA,f=30MHz
150
MHz
f
T
CLASSIFICATION OF h
FE(1)
Rank
D
E
F
G
H
I
J
Range
64-91
78-112
96-135
112-166
144-202
190-300
300-400
B,Nov,2011
Typical Characterisitics
S9013
Static Characteristic
h
FE
—— I
C
1000
100
10
100
80
60
40
20
0
COMMON EMITTER
V
CE
=1V
COMMON
EMITTER
T
a
=25
℃
480uA
420uA
T
a
=100
℃
T
a
=25
℃
360uA
300uA
240uA
180uA
120uA
I
B
=60uA
3
30
500
1
10
100
0
4
8
12
16
20
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
I
C
V
BEsat
——
V
CEsat
—— I
C
500
300
2000
1000
T
a
=25
℃
100
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
30
10
β
=10
β
=10
100
30
10
500
3
3
30
500
100
150
1
10
100
1
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
f
T
—— I
C
I
C
—— V
BE
1000
100
V
CE
=6V
T
a
=25
℃
COMMON EMITTER
V
CE
=1V
30
10
300
100
T
a
=100
℃
3
1
T
a
=25
℃
0.3
0.1
10
2
30
0.0
0.2
0.4
0.6
0.8
1.0
10
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VOLTAGE
V
BE
(V)
V
CB
/ V
EB
C
ob
/ C
ib
——
P
C
—— T
a
700
600
500
400
300
200
100
0
100
f=1MHz
I
E
=0/ I
C
=0
T
a
=25
℃
C
ib
30
10
C
ob
3
1
0.3
3
20
0.1
1
10
0
25
50
75
100
125
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Nov,2011
