Jiangsu-Changjing-Electronics-Technology-Co—Ltd–SS8550-Y2-RANGE-200-350
| Part # | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–SS8550-Y2-RANGE-200-350 |
Download  | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–SS8550-Y2-RANGE-200-350 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SS8550
TRANSISTOR (PNP)
SOT
–
23
FEATURES
High Collector Current
Complementary to SS8050
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
1. BASE
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
2. EMITTER
3. COLLECTOR
Collector-Base Voltage
-40
Collector-Emitter Voltage
Emitter-Base Voltage
-25
V
-5
V
Collector Current
-1.5
A
Collector Power Dissipation
Thermal Resistance From Junction
T
o Ambient
Junction
T
e
m
perature
300
mW
℃
/W
℃
P
C
417
R
ΘJA
T
j
150
Storage
T
e
m
perature
T
stg
-55
～
+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
V
(BR)CBO
I
C
=-100µA, I
E
=0
-40
V
Collector-base breakdown voltage
V
(BR)CEO
V
(BR)EBO
I
CBO
I
C
=-0.1mA, I
B
=0
-25
-5
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
E
=-100µA, I
C
=0
V
V
CB
=-40V, I
E
=0
-100
-100
-100
400
nA
nA
nA
I
CEO
V
CE
=-20V, I
B
=0
Collector cut-off current
I
EBO
V
EB
=-5V, I
C
=0
Emitter cut-off current
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
V
CE
=-1
V
,
I
C
=-100mA
V
CE
=-1
V
,
I
C
=-800mA
I
C
=-800mA, I
B
=-80mA
I
C
=-800mA, I
B
=-80mA
V
CE
=-1
V
,
I
C
=-10mA
V
CE
=-10V,I
C
=-50mA , f=30MHz
V
CB
=-10V, I
E
=0, f=1MHz
120
40
DC current gain
-0.5
-1.2
-1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
f
T
100
MHz
pF
Transition frequency
C
ob
20
Collector output capacitance
CLASSIFICATION OF
h
FE(1)
RANK
L
H
200
–
350
Y2
J
RANGE
120
–
200
300
–
400
MARKING
A,Apr,2011
Typical Characterisitics
SS8550
h
FE
——
I
C
Static Characteristic
500
-180
1mA
-160
0.9mA
Ta=100
℃
0.8mA
-140
-120
-100
-80
-60
-40
-20
-0
Ta=25
℃
0.7mA
0.6mA
0.5mA
100
0.4mA
0.3mA
0.2mA
I
B
=0.1mA
-4.5
V
CE
=-1V
10
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-5.0
-0.1
-1
-10
-100
-1000
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
BEsat
——
I
C
I
C
V
CEsat
——
-1000
-900
-800
-700
-600
-500
-400
-300
-200
-1000
-100
-10
Ta=25
℃
Ta=100
℃
Ta=25
℃
Ta=100
℃
β
=10
β
=10
-1
0.2
-0.1
-1
-10
-100
-1000
-1
-10
-100
-1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
V
BE
—— I
C
V
CB
/ V
EB
C
ob
/ C
ib
——
-1000
-100
-10
100
f=1MHz
I
E
=0/ I
C
=0
Ta=25
o
C
C
ib
C
ob
Ta=100
o
C
Ta=25
℃
-1
VCE=-1V
-900
-0.1
-200
1
-0.2
20
-300
-400
-500
-600
-700
-800
-1000
-1
-10
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(mV)
Pc —— Ta
I
C
fT ——
500
350
300
250
200
150
100
50
100
VCE-10V
Ta=25
o
C
10
0
-1
-10
-100
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
Ta (
℃
)
A,Apr,2011
