Jiangsu-Changjing-Electronics-Technology-Co—Ltd–UMX1N-RANGE-120-560
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
JC
E
T
UMX1N
DUAL TRANSISTOR (NPN+NPN)
FEATURES
SOT-363
z
z
z
z
T
w
o 2SC2412K chips in a SOT-563 package
Mounting possible with SOT-563 automatic mounting machines
Transistor elements are independent, eliminating interference
Mounting cost and area can be cut in half
MARKING:X1
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Para
m
ete
r
Value
60
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
7
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
Storage
T
e
mperature
150
150
150
-55-150
mA
mW
℃
P
C
T
J
T
stg
℃
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
M
in
60
50
7
T
yp
M
ax
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=50
μ
A,I
E
=0
V
(BR)CEO
I
C
=1mA,I
B
=0
V
(BR)EBO
I
E
=50
μ
A,I
C
=0
V
V
I
CBO
I
EBO
h
FE
V
CB
=60
V
,
I
E
=0
0.1
0.1
560
0.4
μ
A
μ
A
Emitter cut-off current
V
EB
=7
V
,
I
C
=0
DC current gain
V
CE
=6
V
,
I
C
=1mA
120
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
I
C
=50mA,I
B
=5mA
V
CE
=12
V
,
I
C
=2mA,f=100MHz
V
CB
=12
V
,
I
E
=0,f=1MHz
V
180
2.0
MHz
pF
Collector output capacitance
C
ob
3.5
1
C,Oct,2014
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.100
0.100
1.000
0.350
0.150
2.200
1.350
2.450
Min
Max
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.150
0.080
2.000
1.150
2.150
0.035
0.000
0.035
0.006
0.003
0.079
0.045
0.085
0.043
0.004
0.039
0.014
0.006
0.087
0.053
0.096
0.650 T
Y
P
0.525 REF
0.026 T
Y
P
0.021 REF
1.200
1.400
0.047
0.055
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
2
A,Jun,2014
C,Oct,2014
