Jiangsu-JieJie-Microelectronics-JMSH1004AE-13
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JMSH1004AC
JMSH1004AE
100V 3.0m
N-Ch Power MOSFET
Product Summary
Features
Parameter
V
DS
Typ.
Unit
V
•
•
•
•
•
Ultra-low R
DS(ON)
Low Gate Charge
100
2.7
190
3.0
V
GS(th)
I
D
(@ V
GS
= 10V)
(1)
V
100% UIS Tested, 100% R
g
Tested
Pb-free Lead Plating
A
R
DS(ON)
(@ V
GS
= 10V)
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
TO-220-3L Top View
TO-263-3L Top View
D
S
D
G
G
G
D
S
S
Ordering Information
Device
T
J
(°C)
-55 to 175
Package
TO-220-3L
TO-263-3L
# of Pins
Marking
SH1004A
SH1004A
MSL
N/A
1
Media
Quantity (pcs)
JMSH1004AC-U
JMSH1004AE-13
3
3
Tube
50
-55 to 175
13-inch Reel
800
Absolute Maximum Ratings
(@ T
A
= 25°C unless otherwise specified)
Parameter
Value
Symbol
V
DS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
V
GS
V
T
C
= 25°C
190
Continuous Drain
Current
(1)
I
D
A
T
C
= 100°C
134
Pulsed Drain Current
(2)
Avalanche Current
(3)
Avalanche Energy
(3)
I
DM
I
AS
531
A
A
70
E
AS
245
mJ
T
C
= 25°C
250
Power Dissipation
(4)
P
D
W
T
C
= 100°C
125
Junction & Storage Temperature Range
T
J
, T
STG
-55 to 175
°C
R
DS(ON)
vs. V
GS
Gate Charge
20
10
8
V
DS
= 50V
D
= 20A
I
D
= 20A
16
12
8
I
6
4
2
4
0
0
0
20
40
60
80
0
4
8
12
16
20
V
GS
(V)
Q
g
(nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 2.3
Page 1 of 5
JMSH1004AC
JMSH1004AE
Electrical Characteristics
(@ T
J
= 25°C unless otherwise specified)
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
STATIC PARAMETERS
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
= 250
A, V
GS
= 0V
100
V
V
DS
= 80V, V
GS
= 0V
I
DSS
1.0
5.0
Zero Gate Voltage Drain Current
A
T
J
=
55°C
V
DS
= 0V, V
GS
= ±20V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
GS
= 10V, I
D
= 20A
Gate-Body Leakage Current
Gate Threshold Voltage
I
GSS
±100
4.0
nA
V
2.0
2.7
3.0
85
V
Static Drain-Source ON-Resistance
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
g
FS
3.6
m
S
V
DS
= 5V, I
D
= 20A
I
S
= 1A, V
GS
= 0V
T
C
= 25°C
V
SD
I
S
0.71
1.0
V
Diode Continuous Current
250
A
DYNAMIC PARAMETERS
(5)
Input Capacitance
C
iss
C
oss
C
rss
R
g
4398
1361
8.5
pF
pF
pF
V
GS
= 0V, V
DS
= 50V, f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 0V, V
DS
= 0V, f = 1MHz
2.5
SWITCHING PARAMETERS
(5)
Total Gate Charge (@V
GS
= 10V)
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
66
44
nC
nC
nC
nC
ns
Total Gate Charge (@V
GS
= 6.0V)
Gate Source Charge
V
GS
= 0 to 10V
V
DS
= 50V, I
D
= 20A
15.2
15.2
17.2
37
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
V
GS
= 10V, V
DS
= 50V
ns
R
L
= 2.5
,
R
GEN
= 6
Turn-Off DelayTime
t
D(off)
t
f
68
ns
Turn-Off Fall Time
61
ns
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t
rr
I
F
= 20A, dI
F
/dt = 100A
I
F
= 20A, dI
F
/dt = 100A
/
s
s
94
ns
Q
rr
/
242
nC
Thermal Performance
Parameter
Typ.
45
Max.
55
Symbol
R
JA
Unit
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
0.40
0.60
R
JC
Notes:
1. Computed continuous current assumes the condition of T
J_Max
while the actual continuous current depends on the thermal & electro-mechanical
application board design.
2. This single-pulse measurement was taken under T
J_Max
= 175°C.
3. This single-pulse measurement was taken under the following condition [L = 100
H, V
GS
= 10V, V
DS
= 50V] while its value is limited by
T
J_Max
= 175°C.
4. The power dissipation P
D
is based on T
J_Max
= 175°C.
5. This value is guaranteed by design hence it is not included in the production test.
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 2.3
Page 2 of 5
JMSH1004AC
JMSH1004AE
Typical Electrical & Thermal Characteristics
100
30
24
18
12
6
V
GS
= 5.0V
V
GS
= 10V
V
DS
= 5.0V
80
60
40
20
0
V
GS
= 4.2V
V
GS
= 4.0V
V
GS
= 4.5V
T
J
= 125°C
T
J
= 25°C
V
GS
= 3.7V
V
GS
= 3.5V
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
V
GS
(V)
4
5
6
V
DS
(V)
Figure 1:
Saturation Characteristics
Figure 2:
Transfer Characteristics
4
3.6
3.2
2.8
2.4
2
3
V
GS
= 10V
I
D
= 20A
2.5
2
1.5
1
V
GS
= 10V
0.5
0
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
Temperature (
C)
I
D
(A)
Figure 3:
R
DS(ON)
vs. Drain Current
Figure 4:
R
DS(ON)
vs. Junction Temperature
100
10
10000
1000
100
10
C
iss
C
oss
T
J
= 125°C
1
0.1
T
J
= 25°C
C
rss
0.01
0.001
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100
V
SD
(V)
V
DS
(V)
Figure 5:
Body-Diode Characteristics
Figure 6:
Capacitance Characteristics
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 2.3
Page 3 of 5
JMSH1004AC
JMSH1004AE
Typical Electrical & Thermal Characteristics
240
200
160
120
80
300
250
200
150
100
50
40
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
CASE
(
C)
T
CASE
(
C)
Figure 7:
Current De-rating
Figure 8:
Power De-rating
1000
800
600
400
200
0
1000.0
100.0
10.0
1.0
Limited by
R
DS(ON)
1.0
s
10
s
100
s
1.0ms
10ms
T
J_Max
= 175°C
DC
0.1
T
C
=
25°C
0.0
0.0001
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS
(V)
Pulse Width (s)
Figure 9:
Maximum Safe Operating
Figure 10:
Single Pulse Power Rating, Junction-to-Case
10
Duty Cycle = T
on
/T
Peak
T
J
= T
C
+ P
D
x Z
JC
x R
JC
R
JC
= 0.40
°
C/W
1
0.1
Duty = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11:
Normalized Maximum Transient Thermal Impedance
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 2.3
Page 4 of 5
JMSH1004AC
JMSH1004AE
TO-220-3L Package Information
Package Outline
MILLIMETER
NOM.
DIM.
MIN.
4.24
2.20
0.70
1.14
0.40
1.15
28.00
8.80
9.70
MAX.
4.70
3.00
0.95
1.70
0.60
1.40
29.80
9.90
10.50
3.80
6.90
3.00
A
A1
b
E
A
C1
b1
C
C1
D
D1
E
A1
b1
L1
L2
L3
e
6.25
2.40
2.54 BSC
C
b
e
TO-263-3L Package Information
Package Outline
MILLIMETER
NOM.
DIM.
MIN.
4.24
2.30
0.00
0.70
1.17
0.30
1.15
14.10
8.50
9.78
1.78
MAX.
4.77
2.89
0.25
0.96
1.70
0.60
1.42
15.88
9.60
10.36
2.79
1.75
A
A1
A2
b
E
0.10
C1
b1
C
C1
D
A
A2
D1
E
A1
b1
L
L1
e
C
b
2.54
e
Recommended Footprint
10.41
1.10
5.08
DIMENSIONS: MILLIMETERS
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 2.3
Page 5 of 5
