Jiangsu-JieJie-Microelectronics-JMTE3003A
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JMTE3003A
Description
JMT N-channel Enhancement Mode Power MOSFET
Applications
Features
Load Switch
30V, 150A
PWM Application
R
DS(ON)
< 2.9m
Ω @
V
GS
= 10V
Power Management
R
DS(ON)
< 6.5m
Ω @
V
GS
= 4.5V
Advanced Trench Technology
Excellent R
DS(ON)
and Low Gate Charge
Lead Free
100% UIS TESTED!
100%
Δ
Vds TESTED!
D
S
G
TO-263-3L Top View
Schematic Diagram
Marking and Pin Assignment
Package Marking and Ordering Information
Per Carton
Device Marking
Device
Package
Outline
Reel Size
Reel(pcs)
13″ 800
(pcs)
JMTE3003A
JMTE3003A
TO-263-3L
TAPING
4000
Absolute Maximum Ratings
(@ T
C
= 25°C unless otherwise specified)
Parameter
Value
Symbol
Units
V
DS
V
GS
Drain-to-Source Voltage
Gate-to-Source Voltage
30
±20
150
95
V
V
T
C
= 25°C
I
D
Continuous Drain Current
A
T
C
= 100°C
Pulsed Drain Current
(1)
Single Pulsed Avalanche Energ
y
(2)
I
DM
E
AS
600
210
347
30
A
mJ
W
P
D
Power Dissipation
T
C
= 25°C
Thermal Resistance, Junction to Ambient
(3)
Thermal Resistance, Junction to Case
Junction & Storage Temperature Range
R
θJA
R
θJC
T
J
, T
STG
°C/W
°C
0.36
-55 to 150
JieJie Microelectronics Co., Ltd
1
Version
：
1.2
JMTE3003A
Electrical Characteristics
(T
J
= 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
V
(BR)DSS
Drain-Source Breakdown Voltage
I
D
= 250
µ
A, V
GS
= 0V
30
–
–
–
–
–
V
V
DS
= 30V, V
GS
= 0V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
1.0
µ
A
nA
V
DS
= 0V, V
GS
= ±20V
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
µ
A
V
GS
= 10V, I
D
= 30A
V
GS
= 4.5V, I
D
= 20A
1.0
1.9
2.2
5.0
2.5
2.9
6.5
V
–
–
m
Ω
m
Ω
Static Drain-Source ON-Resistance
(4)
R
DS(ON)
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
3650
494
366
67
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
GS
= 0V, V
DS
= 15V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
GS
= 0 to 10V
Q
gs
Q
gd
Gate Source Charge
Gate Drain(“Miller”) Charge
11
V
DD
= 30V, I
D
= 15A
19
Switching Characteristics
t
d(on)
Turn-On DelayTime
–
–
–
–
10
19
50
20
–
–
–
–
ns
ns
ns
ns
t
r
t
d(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
Turn-On Rise Time
V
GS
= 10V, V
DD
= 15V
I
D
= 30A
,
R
GEN
= 3
Ω
Drain-Source Diode Characteristics and Max Ratings
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
150
600
1.2
–
A
A
I
SM
V
SD
trr
V
GS
= 0V, I
S
= 30A
Drain to Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
–
V
18
6
ns
nC
I
F
=20A,di/dt=100A/μs
Qrr
–
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. E
AS
condition: Starting T
J
=25C, V
DD
=15V, V
G
=10V, R
G
=25ohm, L=0.5mH, I
AS
=29A
3. R
θJA
is measured with the device mounted on a 1inch
2
pad of 2oz copper FR4 PCB
4. Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
0.5%.
JieJie Microelectronics Co., Ltd
2
Version
：
1.2
JMTE3003A
Typical Performance Characteristics
Figure 1: Output Characteristics
Figure 2: Typical Transfer Characteristics
100
20
16
12
8
V
GS
= 10V
V
GS
= 6V
V
DS
= 5V
80
60
40
20
0
V
GS
= 4.2V
V
GS
= 4.5V
T
J
= 125°C
V
GS
= 4.0V
T
J
= -55°C
V
GS
= 3.8V
T
J
= 25°C
4
V
GS
= 3.5V
4
0
0
0.5
1
1.5
2
2.5
V
GS
(V)
3
3.5
4
4.5
5
0
1
2
3
5
V
DS
(V)
Figure 3: On-resistance vs. Drain Current
Figure 4: Body Diode Characteristics
100
10
8
7
6
5
4
3
2
1
0
V
GS
= 0V
T
J
= 125°C
V
GS
= 4.5V
1
T
J
= -55°C
0.1
0.01
T
J
= 25°C
V
GS
= 10V
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1
1.2
I
D
(A)
V
SD
(V)
Figure 5: Gate Charge Characteristics
Figure 6: Capacitance Characteristics
10
10000
1000
100
V
DD
= 30V
I
D
= 15A
8
6
4
2
0
C
iss
C
oss
C
rss
f = 1MHZ
V
GS
= 0V
0
10
20
30
40
50
60
70
0
5
10
15
V
DS
(V)
20
25
30
Q
g
(nC)
JieJie Microelectronics Co., Ltd
3
Version
：
1.2
JMTE3003A
Typical Performance Characteristics
Figure 7: Normalized Breakdown voltage vs.
Junction Temperature
Figure 8: Normalized on Resistance vs.
Junction Temperature
1.20
2.2
2
V
GS
= 10V
I
D
= 30A
I
D
= 1mA
1.15
1.8
1.6
1.4
1.2
1
1.10
1.05
1.00
0.95
0.90
0.8
0.6
0.4
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T
J
(
℃
) Junction Temperature
T
J
(
℃
) Junction Temperature
Figure 9: Maximum Safe Operating Area
Figure 10: Maximum Continuous Drian Current
vs. Case Temperature
1000
100
10
160
140
120
100
80
Limited by
R
DS(ON)
V
GS
= 10V
10us
100us
1ms
DC
60
T
C
= 25°C
Single Puse
40
20
1
0
0.1
1
10
100
0
25
50
75
100
125
150
V
DS
(V)
T
C
(
℃
) Case Temperature
Figure 11: Normalized Maximum Transient
Thermal Impedance
Figure 12: Peak Current Capacity
10000
1000
100
10
D = 0.5,
0.2,
V
GS
= 10V
0.1,
0.05,
0.02,
0.01,
1
0.1
single pulse
0.01
0.001
Duty factor: D = t1/t2
Peak T
J
= T
C
+ P
DM
x Z
θ
JC
x R
θ
JC
Single Pulse
10
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
t, Pulse Width (s)
t, Pulse Width (s)
JieJie Microelectronics Co., Ltd
4
Version
：
1.2
JMTE3003A
Test Circuit
Figure 1: Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveform
Figure 3: Unclamped Inductive Switching Test Circuit& Waveform
Figure 4: Diode Recovery Test Circuit & Waveform
JieJie Microelectronics Co., Ltd
5
Version
：
1.2
JMTE3003A
Package Mechanical Data(TO-263-3L)
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that
when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu
JieJie assumes no responsibility for any infringement of other rights of third parties which may
result from the use of such products and information.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright ©2023 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
JieJie Microelectronics Co., Ltd
6
Version
：
1.2
