Jiangsu-JieJie-Microelectronics-JMTJ3407A
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JMTJ3407A
Description
JMT P-channel Enhancement Mode Power MOSFET
Features
Application
V
DS
= -30V, I
D
= -4.1A
PWM Applications
Load Switch
R
DS(ON)
<60mΩ @ V
GS
= -10V
R
DS(ON)
<85mΩ @ V
GS
= -4.5V
Advanced Trench
T
echnology
Excellent R
DS(ON)
and Low Gate Charge
Lead free product is acquired
Power Management
SOT-23-3L top view
Marking and pin Assignment
Schematic Diagram
Package Marking and Ordering Information
Reel
(PCS)
Per Carton
(PCS)
Device Marking
Device
OUTLINE
Device Package
Reel Size
3407
JMTJ3407A
TAPING
SOT-23-3L
7inch
3000
120000
Absolute Maximum Ratings
(T
A
=25
℃
unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
-30
±20
V
V
Gate-Source Voltage
T
A
= 25
℃
-4.1
A
I
D
Continuous Drain Current
T
A
= 100
℃
-2.7
A
I
DM
P
D
Pulsed Drain Current
note1
Power Dissipation
-16.4
1.51
A
T
A
= 25
℃
W
℃
/W
℃
R
θJA
Thermal Resistance, Junction to Ambient
83
T
J
, T
STG
Operating and Storage
T
e
mperature Range
-55 to +150
JieJie Microelectronics CO. , Ltd
Version :1.1
– 1 –
JMTJ3407A
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min. Typ. Max.
Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
= 0V, I
D
= -250μA
V
DS
= -30V, V
GS
= 0V,
V
DS
= 0V, V
GS
= ±20V
-30
–
–
–
–
V
–
–
-1
μA
nA
I
GSS
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -4.1A
V
GS
= -4.5V, I
D
= -3.5A
-1.0
-1.7
44
-2.5
60
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note2
70
85
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
580
98
74
6.8
1
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS
= -15V, I
D
= -4.1A,
V
GS
= -10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
1.4
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
14
61
19
10
–
–
–
–
ns
ns
ns
ns
V
DD
= -15V, I
D
= -1A,
V
GS
= -10V, R
GEN
= 2.5Ω
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
-4.1
-16.4
-1.2
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
= 0V, I
S
= -4.1A
Voltage
V
SD
-0.8
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. Pulse
T
est: Pulse Width≤300μs, Duty Cycle≤2%
JieJie Microelectronics CO. , Ltd
Version :1.1
– 2 –
JMTJ3407A
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
-I
D
(A)
-I
D
(A)
25
25
20
15
10
5
6V
10V
T
A
=-55
℃
25
℃
4.5V
20
15
10
5
125
℃
2.5V
1.5V
-V
GS
(V)
1.5 2.0 2.5 3.0 3.5 4.0
-V
DS
(V)
0
0
0
2
4
6
8
10
0
0.5 1.0
4.5
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
-I
S
(A)
R
DS(ON)
(mΩ)
10
80
70
V
GS
=-4.5V
T
J
=150
℃
T
J
=-25
℃
60
T
J
=-50
℃
1
50
40
V
GS
=-10V
-I
D
(A)
V
SD
(V)
0.6 0.8
0.1
0.0
30
0
0.2
0.4
1.0
1.2
1.4
2
4
6
8
10
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
-V
GS
(V)
C(pF)
10
8
V
DS
=-15V
I
D
=-4.1A
C
iss
10
3
6
C
oss
C
rss
4
2
0
10
2
10
1
-V
DS
(V)
15
Q
g
(nC)
0
1
2
3
4
5
6
7
0
5
10
20
25
30
JieJie Microelectronics CO. , Ltd
Version :1.1
– 3 –
JMTJ3407A
Figure 7:
Normalized Breakdown Voltage vs.
Figure 8:
Normalized on Resistance vs.
Junction Temperature
Junction Temperature
V
BR(DSS)
R
DS
(on)
2.5
2.0
1.3
1.2
1.1
1.0
1.5
1.0
0.5
0.9
0
Tj (
℃
)
50
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Ambient Temperature
-I
D
(A
)
-I
D
(A
)
5
100
10
4
3
2
1
10μs
100μs
Limited by R
DS(on)
1
1ms
DC
T
C
=25
℃
Single pulse
T
A
(
℃
)
-V
DS
(V)
10
0.1
0.1
0
1
100
0
25
50
75
100
125
150
Figure.11:
Maximum Effective Transient
Thermal Impedance, Junction-to-Ambient
Zth
J-A
(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
Single pulse
10
-1
10
-2
Notes:
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJA
+T
A
T
P
(s)
10
-1
10
-4
10
-3
10
-2
10
0
10
1
10
2
JieJie Microelectronics CO. , Ltd
Version :1.1
– 4 –
JMTJ3407A
Typical Performance Characteristics
JieJie Microelectronics CO. , Ltd
Version :1.1
– 5 –
JMTJ3407A
Package Mechanical Data-SOT-23-3L
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu
JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without
consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when
an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu
JieJie assumes no responsibility for any infringement of other rights of third parties which may
result from the use of such products and information.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright ©2022 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
JieJie Microelectronics CO. , Ltd
Version :1.1
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