Jiangsu-JieJie-Microelectronics-JMTK080P03A
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JMTK080P03A
Description
JMT P-channel Enhancement Mode Power MOSFET
Features
Application
V
DS
= -30V, I
D
= -60A
PWM Applications
Load Switch
Power Management
R
DS(ON)
<7.5mΩ @ V
GS
= -10V
R
DS(ON)
<12.6mΩ @ V
GS
= -4.5V
Advanced Trench
T
e
chnology
Excellent R
DS(ON)
and Low Gate Charge
Lead free product is acquired
100% UIS TESTED!
100% ΔVds TESTED!
TO-252(DPAK) top view
Marking and pin Assignment
Schematic Diagram
Package Marking and Ordering Information
Reel
(PCS)
Per Carton
(PCS)
Device Marking
Device
OUTLINE
Device Package
Reel Size
JMTK080P03A
JMTK080P03A
TAPING
TO-252
13inch
2500
25000
Absolute Maximum Ratings
(T
C
=25
℃
unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
-30
±20
V
V
Gate-Source Voltage
T
C
= 25
℃
-60
A
I
D
Continuous Drain Current
Pulsed Drain Current
note1
T
C
= 100
℃
-39
A
I
DM
E
AS
P
D
-240
144
A
Single Pulsed Avalanche Energy
note2
mJ
W
Power Dissipation
T
C
= 25
℃
54
R
θJC
Thermal Resistance, Junction to Case
2.8
℃
/W
℃
T
J
, T
STG
Operating and Storage
T
e
mperature Range
-55 to +175
JieJie Microelectronics CO. , Ltd
Version :1.0
– 1 –
JMTK080P03A
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V, I
D
= -250μA
V
DS
= -30V, V
GS
=0V,
V
DS
=0V, V
GS
= ±20V
-30
–
–
–
–
V
–
–
-1
μA
nA
I
GSS
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -30A
V
GS
= -4.5V, I
D
= -20A
-1.0
-1.5
5.8
9
-2.5
7.5
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
12.6
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
4650
550
486
45
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= -15V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
V
DS
= -15V, I
D
= -20A,
V
GS
= -10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
8
12
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
19
15
65
36
–
–
–
–
ns
ns
ns
ns
V
DD
= -15V, I
D
= -30A,
V
GS
= -10V, R
GEN
=2.5Ω
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
-60
-240
-1.2
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
= -30A
Voltage
V
SD
-0.8
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. E
AS
condition: T
J
=25
℃
, V
DD
= -15
V
,
V
G
= -10
V
,
R
G
=25Ω, L=0.5mH, I
AS
= -24A
3. Pulse
T
e
st: Pulse Width≤300μs, Duty Cycle≤2%
JieJie Microelectronics CO. , Ltd
Version :1.0
– 2 –
JMTK080P03A
Typical Performance Characteristics
Figure1:
Output Characteristics
Figure 2:
Typical Transfer Characteristics
-I
D
(A)
100
-I
D
(A)
100
T
J
=-55
℃
25
℃
-10V
80
80
60
-4.5V
-4V
60
40
125
℃
40
20
0
-3V
20
V
GS
=-2V
-V
GS
(V)
1.5 2.0 2.5 3.0 3.5 4.0
-V
DS
(V)
0
0
1.0
2.0
3.0
4.0
5.0
0
0.5 1.0
4.5
1.4
30
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
R
DS(ON)
(mΩ)
-I
S
(A)
14
12
10
8
10
V
GS
=-4.5V
T
J
=150
℃
T
J
=-25
℃
T
J
=-50
℃
1
V
GS
=-10V
6
4
-I
D
(A)
30
-V
SD
(V)
0.6 0.8
2
0.1
0.0
0
10
20
40
50
60
0.2
0.4
1.0
1.2
Figure 5:
Gate Charge Characteristics
-V
GS
(V)
Figure 6:
Capacitance Characteristics
C(pF)
10
8
V
DS
=-15V
I
D
=-20A
10
4
C
iss
6
4
2
0
10
3
10
2
C
oss
C
rss
-V
DS
(V)
15
Q
g
(nC)
0
10
20
30
40
50
0
5
10
20
25
JieJie Microelectronics CO. , Ltd
Version :1.0
– 3 –
JMTK080P03A
Figure 8:
Normalized on Resistance vs.
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Junction Temperature
-V
BR(DSS)
R
DS
(on)
2.5
1.3
1.2
2.0
1.5
1.1
1.0
1.0
0.5
0.9
0
Tj (
℃
)
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 10:
Maximum Continuous Drain Current
vs. Case Temperature
Figure 9:
Maximum Safe Operating Area
-I
D
(A
)
-I
D
(A
)
10
3
80
Limited by R
DS(on)
10μs
10
2
60
40
100μs
1ms
10ms
10
1
10
0
10
-1
100ms
DC
20
0
T
C
=25
℃
Single pulse
T
C
(
℃
)
75 100
-V
DS
(V)
1
0.01
0.1
10
100
0
25
50
125
150
175
Figure.11:
Maximum Effective
Transient Thermal Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
1
10
0
10
-1
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-2
10
-3
Notes:
Single pulse
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
JieJie Microelectronics CO. , Ltd
Version :1.0
– 4 –
JMTK080P03A
Test Circuit
JieJie Microelectronics CO. , Ltd
Version :1.0
– 5 –
JMTK080P03A
Package Mechanical Data-TO-252
E
B2
Dimensions
A
Ref.
Millimeters
Inches
Typ.
C2
Typ.
Min.
2.10
0
Max.
2.50
0.10
0.86
5.48
0.60
0.58
6.30
Min.
0.083
0
Max.
0.098
0.004
0.034
0.216
0.024
0.023
0.248
A
A2
B
0.66
5.18
0.40
0.44
5.90
0.026
0.202
0.016
0.017
0.232
B2
C
C2
D
C
5.30REF
0.209REF
D1
E
B
G
6.40
4.63
4.47
9.50
1.09
1.35
6.80
0.252
0.182
0.176
0.374
0.043
0.053
0.268
DETAIL A
E1
G
4.67
10.70
1.21
0.184
0.421
0.048
0.065
H
V
2
L
1.65
L2
V1
V2
7°
7°
E1
L2
0°
6°
0°
6°
DETAIL A
TO-252
Reel Spectification-TO-252
B
Dimensions
P0
P2
T
Ref.
Millimeters
Typ.
15.90 16.00
16.10 0.626
Inches
t1
Typ.
Min.
Max.
Min.
Max.
A
A
W
E
0.630 0.634
0.069 0.073
1.65
7.40
1.40
1.40
3.90
7.90
1.90
6.85
1.75
7.50
1.50
1.50
4.00
8.00
2.00
6.90
1.85
7.60
1.60
1.60
4.10
8.10
2.10
7.00
0.065
F
0.291 0.295 0.299
K0
P1
D0
D1
P0
P1
P2
A0
B0
K0
T
0.055
0.055
0.154
0.059 0.063
0.059 0.063
0.157 0.161
A0
B
B
B
5°
20
A
A
0.311 0.315 0.319
0.075
0.270
0.079 0.083
0.271 0.276
10.45 10.50 10.60 0.411 0.413 0.417
2.68
0.24
0.10
2.78
2.88
0.27
0.105 0.109
0.113
0.009
0.004
0.011
t1
10P0 39.80
40.00 40.20 1.567 1.575 1.583
JieJie Microelectronics CO. , Ltd
Version :1.0
– 6 –
JMTK080P03A
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu
JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without
consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when
an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu
JieJie assumes no responsibility for any infringement of other rights of third parties which may
result from the use of such products and information.
This document supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright ©2020 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
JieJie Microelectronics CO. , Ltd
Version :1.0
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