Jiangsu-JieJie-Microelectronics-JMTK3003A
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JMTK3003A
Description
JMT N-channel Enhancement Mode Power MOSFET
Features
Application
30V,150A
Load Switch
R
DS(ON)
<3.3mΩ @ V
GS
=10V
PWM Application
Power management
R
DS(ON)
<6.5mΩ @ V
GS
=4.5V
Advanced Trench
T
e
chnology
Provide Excellent R
DS(ON)
and Low Gate Charge
Lead free product is acquired
100% UIS TESTED!
100% ΔVds TESTED!
TO-252(DPAK) top view
Marking and pin Assignment
Schematic Diagram
Package Marking and Ordering Information
Reel
(PCS)
Per Carton
(PCS)
Device Marking
Device
OUTLINE
Device Package
Reel Size
JMTK3003A
JMTK3003A
TAPING
TO-252
13inch
2500
25000
Absolute Maximum Ratings
(T
C
=25
℃
unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
30
±20
V
V
Gate-Source Voltage
T
C
= 25
℃
150
A
I
D
Continuous Drain Current
Pulsed Drain Current
note1
T
C
= 100
℃
98
A
I
DM
E
AS
600
A
Single Pulsed Avalanche Energy
note2
225
mJ
W
P
D
Power Dissipation
T
C
= 25
℃
108
R
θJC
Thermal Resistance, Junction to Case
1.4
℃
/W
℃
T
J
, T
STG
Operating and Storage
T
e
mperature Range
-55 to +175
JieJie Microelectronics CO. , Ltd
Version :1.1
– 1 –
JMTK3003A
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V, I
D
=250μA
V
DS
=30V, V
GS
= 0V,
V
DS
=0V, V
GS
= ±20V
30
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=20A
1.0
1.6
2.5
4.5
2.5
3.3
6.5
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
3500
500
431
38
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=15V, V
GS
=0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
V
DS
=15V, I
D
=30A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
9
13
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
26
24
91
39
–
–
–
–
ns
ns
ns
ns
V
DS
=15V,
I
D
=30A, R
GEN
=3Ω,
V
GS
=10V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
150
600
1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
= 0V, I
S
=30A
Voltage
–
V
Body Diode Reverse Recovery Time
42
39
ns
nC
I
F
=20A,dI/dt=100A/μs
Body Diode Reverse Recovery
Charge
Qrr
–
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. EAS condition: T
J
=25
℃
, V
DD
=15
V
,
V
G
=10
V
, R
G
=25
Ω
, L=0.5mH, I
AS
=30A
3. Pulse
T
e
st: Pulse Width≤300μs, Duty Cycle≤0.5%
JieJie Microelectronics CO. , Ltd
Version :1.1
– 2 –
JMTK3003A
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
I
D
(A)
100
80
100
10V
80
60
40
20
0
8V
3.5V
4.5V
60
40
20
0
3V
125
℃
25
℃
V
GS
=2.5V
V
GS
(V)
V
DS
(V)
0
1.0
2.0
3.0
4.0
5.0
0
1
2
3
4
5
6
Figure 4
: Body Diode Characteristics
I
S
(A)
Figure 3:
On-resistance vs. Drain Current
R
DS(ON)
(mΩ)
6
5
4
3
1000
100
V
GS
=4.5V
150
℃
25
℃
10
1
V
GS
=10V
2
1
I
D
(A)
30
V
SD
(V)
1.0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0
10
20
40
50
60
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
8
V
DS
=15V
I
D
=30A
10000
C
iss
6
1000
100
C
oss
C
rss
4
2
0
V
DS
(V)
Q
g
(nC)
10
0
0
8
16
24
32
40
5
10
15
20
25
30
JieJie Microelectronics CO. , Ltd
Version :1.1
– 3 –
JMTK3003A
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8:
Normalized on Resistance vs.
Junction Temperature
V
BR(DSS)
(V)
1.3
R
DS
(on)(mΩ)
2.5
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
0
Tj (
℃
)
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 10:
Maximum Continuous Drain Current
vs. Case Temperature
Figure 9:
Maximum Safe Operating Area
I
D
(A
)
I
D
(A
)
180
150
1000
100
10μs
100μs
1ms
120
90
10ms
100ms
10
1
Limited by R
DS(on)
60
DC
T
C
=25
℃
Single pulse
V
DS
(V)
30
0
Tc (
℃
)
75 100
0.1
0.1
1
10
100
0
25
50
125
150
175
Figure.11:
Maximum Effective
Transient Thermal Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
1
0
1
10
0
10
-1
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
Single pulse
10
-2
Notes:
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-2
10
-3
10
10
-5
10
-4
10
-3
10
-1
10
0
10
1
-6
JieJie Microelectronics CO. , Ltd
Version :1.1
– 4 –
JMTK3003A
Test Circuit
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
JieJie Microelectronics CO. , Ltd
Version :1.1
– 5 –
JMTK3003A
Package Mechanical Data-TO-252
E
B2
Dimensions
A
Ref.
Millimeters
Typ.
Inches
Typ.
C2
Min.
2.10
0
Max.
2.50
0.10
0.86
5.48
0.60
0.58
6.30
Min.
0.083
0
Max.
0.098
0.004
0.034
0.216
0.024
0.023
0.248
A
A2
B
0.66
5.18
0.40
0.44
5.90
0.026
0.202
0.016
0.017
0.232
B2
C
C2
D
C
5.30REF
0.209REF
D1
E
B
G
6.40
4.63
4.47
9.50
1.09
1.35
6.80
0.252
0.182
0.176
0.374
0.043
0.053
0.268
DETAIL A
E1
G
4.67
10.70
1.21
0.184
0.421
0.048
0.065
H
V
2
L
1.65
L2
V1
V2
7°
7°
E1
L2
0°
6°
0°
6°
DETAIL A
TO-252
Reel Spectification-TO-252
B
Dimensions
P0
P2
T
Ref.
Millimeters
Inches
t1
Typ.
15.90 16.00 16.10 0.626
Typ.
Min.
Max.
Min.
Max.
A
A
W
E
0.630 0.634
0.069 0.073
1.65
7.40
1.40
1.40
3.90
7.90
1.90
6.85
1.75
7.50
1.50
1.50
4.00
8.00
2.00
6.90
1.85
7.60
1.60
1.60
4.10
8.10
2.10
7.00
0.065
F
0.291 0.295 0.299
K0
P1
D0
D1
P0
P1
P2
A0
B0
K0
T
0.055
0.055
0.154
0.059 0.063
0.059 0.063
0.157 0.161
A0
B
B
B
5°
20
A
A
0.311 0.315 0.319
0.075
0.270
0.079 0.083
0.271 0.276
10.45 10.50 10.60 0.411 0.413 0.417
2.68
0.24
0.10
2.78
2.88
0.27
0.105 0.109
0.113
0.009
0.004
0.011
t1
10P0 39.80 40.00 40.20 1.567 1.575 1.583
JieJie Microelectronics CO. , Ltd
Version :1.1
– 6 –
JMTK3003A
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu
JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without
consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when
an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu
JieJie assumes no responsibility for any infringement of other rights of third parties which may
result from the use of such products and information.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright ©2019 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
JieJie Microelectronics CO. , Ltd
Version :1.1
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