Jiangsu-JieJie-Microelectronics-JMTP3010D
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JMTP3010D
Description
JMT Dual N-channel Enhancement Mode Power MOSFET
Features
Application
30V, 12A
Load Switch
R
DS(ON)
<12mΩ @ V
GS
=10V
PWM Application
Power management
R
DS(ON)
<18mΩ @ V
GS
=4.5V
Advanced Trench
T
e
chnology
Provide Excellent R
DS(ON)
and Low Gate Charge
Lead free product is acquired
100% UIS TESTED!
100% ΔVds TESTED!
SOP-8(Dual)
Marking and pin Assignment
Schematic Diagram
Package Marking and Ordering Information
Reel
(PCS)
Per Carton
(PCS)
Device Marking
Device
OUTLINE
Device Package
Reel Size
3010D
JMTP3010D
TAPING
SOP-8
13inch
4000
48000
Absolute Maximum Ratings
(T
C
=25
℃
unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
30
V
V
Gate-Source Voltage
±20
T
A
= 25
℃
12
A
I
D
Continuous Drain Current
Pulsed Drain Current
note1
T
A
= 100
℃
8
A
I
DM
E
AS
48
A
Single Pulsed Avalanche Energy
note2
16
mJ
W
P
D
Power Dissipation
T
A
= 25
℃
3
46
R
θJA
Thermal Resistance, Junction to Ambient
℃
/W
℃
T
J
, T
STG
Operating and Storage
T
e
mperature Range
-55 to +150
JieJie Microelectronics CO. , Ltd
Version :1.2
– 1 –
JMTP3010D
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V, I
D
=250μA
V
DS
=30V, V
GS
=0V,
V
DS
=0V, V
GS
=±20V
30
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=10A
1.0
1.5
9
2.5
12
18
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
13
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
1011
142
119
19
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=15V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
V
DS
=15V, I
D
=10A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
6.3
4.5
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
6
5
–
–
–
–
ns
ns
ns
ns
V
DS
=15V,
I
D
=6A, R
GEN
=3Ω,
V
GS
=10V
25
7
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
12
48
1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
=12A
–
V
Voltage
Body Diode Reverse Recovery Time
7
ns
nC
I
F
=10A,dI/dt=100A/μs
Body Diode Reverse Recovery
Charge
Qrr
6.3
–
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. EAS condition: T
J
=25
℃
, V
GS
=10
V
,
R
G
=25Ω
，
L=0.5mH, I
AS
=11.5A
3. Pulse
T
e
st: Pulse Width≤300μs, Duty Cycle≤0.5%
JieJie Microelectronics CO. , Ltd
Version :1.2
– 2 –
JMTP3010D
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
100
10V
8V
80
I
D
(A)
100
80
3.5V
5V
60
60
40
20
0
40
20
0
3V
125
℃
25
℃
V
GS
=2.5V
V
GS
(V)
V
DS
(V)
0
2.0
4.0
6.0
8.0
10.0
0
1
2
3
4
5
6
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
I
S
(A)
R
DS(ON)
(mΩ)
16
14
12
10
1000
100
V
GS
=4.5V
150
℃
25
℃
10
1
V
GS
=2.5V
25
8
6
I
D
(A)
15
V
SD
(V)
1.0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0
5
10
20
30
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
V
DS
=15V
I
D
=10A
10000
8
6
4
C
iss
1000
100
C
oss
C
rss
2
V
DS
(V)
Q
g
(nC)
0
10
0
0
4
8
10
15
20
5
10
15
20
25
30
JieJie Microelectronics CO. , Ltd
Version :1.2
– 3 –
JMTP3010D
Figure 8:
Normalized on Resistance vs.
Junction Temperature
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
V
BR(DSS)
R
DS
(on)
2.5
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
0.8
Tj (
℃
)
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Ambient Temperature
I
D
(A
)
I
D
(A
)
10
3
15
Limited by R
DS(on)
12
10
2
10
1
10
0
10
-1
10μs
9
6
100μs
1ms
10ms
3
0
T
A
=25
℃
Single pulse
100ms
DC
T
A
(
℃
)
V
DS
(V)
0.1
1
10
100
0
25
50
75
100
125
150
Figure.11:
Maximum Effective
Transient Thermal Impedance, Junction-to-Ambient
Zth
J-A
(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-1
10
-2
Notes:
Single pulse
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJA
+T
A
T
P
(s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
JieJie Microelectronics CO. , Ltd
Version :1.2
– 4 –
JMTP3010D
Test Circuit
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
JieJie Microelectronics CO. , Ltd
Version :1.2
– 5 –
JMTP3010D
Package Mechanical Data- SOP-8
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu
JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without
consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when
an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu
JieJie assumes no responsibility for any infringement of other rights of third parties which may
result from the use of such products and information.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright ©2020 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
JieJie Microelectronics CO. , Ltd
Version :1.2
– 6 –
