Jiangsu-JieJie-Microelectronics-JMTP4435A
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JMTP4435A
Description
JMT P-channel Enhancement Mode Power MOSFET
Features
Application
V
DS
=-30V, I
D
=-10A
PWM Applications
Load Switch
Power Management
R
DS(ON)
<23mΩ @ V
GS
= -10V
R
DS(ON)
<34mΩ @ V
GS
= -4.5V
Advanced Trench
T
e
chnology
Excellent R
DS(ON)
and Low Gate Charge
Lead free product is acquired
100% UIS TESTED!
100% ΔVds TESTED!
SOP-8 top view
Marking and pin Assignment
Schematic Diagram
Package Marking and Ordering Information
Reel
(PCS)
Per Carton
(PCS)
Device Marking
Device
OUTLINE
Device Package
Reel Size
4435
JMTP4435A
TAPING
SOP-8
13inch
4000
48000
Absolute Maximum Ratings
(T
A
=25
℃
unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
-30
±20
V
V
Gate-Source Voltage
T
C
= 25
℃
-10
A
I
D
Continuous Drain Current
T
C
= 100
℃
-7
A
I
DM
P
D
Pulsed Drain Current
note1
Power Dissipation
-40
A
T
A
= 25
℃
3.7
W
℃
/W
℃
R
θJA
Thermal Resistance, Junction to Ambient
33.8
-55 to +150
T
J
, T
STG
Operating and Storage
T
e
mperature Range
JieJie Microelectronics CO. , Ltd
Version :1.1
– 1 –
JMTP4435A
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V,I
D
= -250μA
V
DS
= -30V, V
GS
= 0V,
V
DS
=0V, V
GS
= ±20V
-30
–
–
–
–
V
–
–
-1
μA
nA
I
GSS
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250μA
V
GS
=-10V, I
D
=-10A
V
GS
=-4.5V, I
D
=-5A
-1.0
-1.5
16
-2.4
23
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note2
25
34
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
1550
327
278
30
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
V
DS
= -15V, I
D
= -9.1A,
V
GS
= -10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
5.3
7.6
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
14
20
95
65
–
–
–
–
ns
ns
ns
ns
V
DD
= -15V, I
D
= -6A,
V
GS
=-10V, R
GEN
=2.5Ω
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
-10
-40
-1.2
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
= 0V, I
S
= -10A
Voltage
V
SD
-0.8
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. Pulse
T
e
st: Pulse Width≤300μs, Duty Cycle≤2%
JieJie Microelectronics CO. , Ltd
Version :1.1
– 2 –
JMTP4435A
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
-I
D
(A)
50
-I
D
(A)
50
40
30
20
10
0
V
GS
=10 thru 6V
5V
T
C
=-55
℃
25
℃
40
30
20
10
0
4V
125
℃
3V
-V
GS
(V)
1.5 2.0 2.5
-V
DS
(V)
0
1
2
3
4
5
0
0.5 1.0
3.0 3.5 4.0
4.5
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
-I
S
(A)
R
DS(ON)
(mΩ)
10
28
24
V
GS
=-4.5V
V
GS
=-10V
20
16
12
8
T
J
=150
℃
T
J
=-25
℃
T
J
=-50
℃
1
4
0
-I
D
(A)
V
SD
(V)
0.6 0.8
0.1
0.0
0.2
0.4
1.0
1.2
1.4
0
2
4
6
8
10
12
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
-V
GS
(V)
C(pF)
10
8
V
DS
=-15V
I
D
=-9.1A
C
iss
10
3
6
C
oss
C
rss
4
2
0
10
2
10
1
-V
DS
(V)
15
Q
g
(nC)
0
6
12
18
24
30
0
5
10
20
25
30
JieJie Microelectronics CO. , Ltd
Version :1.1
– 3 –
JMTP4435A
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8:
Normalized on Resistance vs.
Junction Temperature
V
BR(DSS
)
(V)
1.3
R
DS
(on)(mΩ)
2.5
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
0
Tj (
℃
)
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Case Temperature
-I
D
(A
)
-I
D
(A
)
14
100
10
12
10
8
10μs
100μs
6
Limited by R
DS(on)
1ms
DC
1
4
T
C
=25
℃
Single pulse
2
0
Tc (
℃
)
V
DS
(V)
10
0.1
0.1
1
100
0
25
50
75
100
125
150
Figure.11:
Maximum Effective Transient
Thermal Impedance, Junction-to-Ambient
Zth
J-C
(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
Single pulse
10
-1
10
-2
Notes:
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-1
10
-4
10
-3
10
-2
10
0
10
1
10
2
JieJie Microelectronics CO. , Ltd
Version :1.1
– 4 –
JMTP4435A
JieJie Microelectronics CO. , Ltd
Version :1.1
– 5 –
JMTP4435A
Package Mechanical Data
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu
JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without
consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when
an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu
JieJie assumes no responsibility for any infringement of other rights of third parties which may
result from the use of such products and information.
This document supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright ©2019 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
JieJie Microelectronics CO. , Ltd
Version :1.1
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