Jiangsu-JieJie-Microelectronics-JST41Z-600B
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JIEJIE MICROELECTRONICS CO. , Ltd
JST41 Series
40A TRIACs
Rev.4.0
DESCRIPTION:
JST41 series triacs, with high ability to withstand
the shock loading of large current, provide high
dv/dt rate with strong resistance to electromagnetic
interface. With high commutation performances, 3
quadrants products especially recommended for use
on inductive load.
1
2
3
1
2
TO-3P
Insulated
3
TO-247
JST41Z provides insulation voltage rated at 2500V
RMS from all three terminals to external heatsink
complying with UL standards (File ref: E252906).
MAIN FEATURES
Symbol
I
T(RMS)
Value
40
Unit
A
V
DRM
/V
RRM
600 and 800 and 1200 and 1600
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
T
stg
Value
Unit
℃
℃
V
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25
℃
)
Repetitive peak reverse voltage (T
j
=25
℃
)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
-40-150
-40-125
T
j
V
DRM
V
RRM
V
DSM
V
RSM
600/800/1200/1600
600/800/1200/1600
V
DRM
+100
V
V
V
RRM
+100
V
TO-3P(Ins) (T
C
=80
℃
)
RMS on-state
current
I
T(RMS)
40
A
TO-247/ TG-C
(T
C
=90
℃
)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
2
t value for fusing (tp=10ms)
I
TSM
I
2
t
400
880
50
A
A
2
s
A
/μ
s
Critical rate of rise of on-state current
(I
G
=2
×
I
GT
)
dI/dt
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：
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JST41 Series
JieJie Microelectronics CO. , Ltd
Peak gate current
I
GM
P
G(AV)
P
GM
4
1
A
Average gate power dissipation
Peak gate power
W
W
10
ELECTRICAL CHARACTERISTICS
(T
j
=25
℃
unless otherwise specified)
3 Quadrants
Symbol
I
GT
Test Condition
Quadrant
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅰ
–
Ⅱ
–
Ⅲ
Value
50
Unit
mA
V
MAX
MAX
V
D
=12V R
L
=33
Ω
V
GT
1.3
V
D
=V
DRM
T
j
=125
℃
R
L
=3.3K
Ω
V
GD
Ⅰ
–
Ⅱ
–
Ⅲ
MIN
0.2
V
Ⅰ
–
Ⅲ
80
100
60
I
L
MAX
mA
I
G
=1.2I
GT
Ⅱ
I
H
I
T
=100mA
MAX
MIN
MIN
mA
V
/μ
s
V
/μ
s
V
D
=2/3V
DRM
Gate Open
T
j
=125
℃
dV/dt
1000
20
(dV/dt)c Without
snubber T
j
=125
℃
4 Quadrants
Symbol
Test Condition
Quadrant
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅳ
Value
50
Unit
I
GT
MAX
mA
V
D
=12V R
L
=33
Ω
70
V
GT
V
GD
ALL
MAX
MIN
1.5
V
V
V
D
=V
DRM
T
j
=125
℃
R
L
=3.3K
Ω
ALL
0.2
Ⅰ
–
Ⅲ
–
Ⅳ
90
100
80
I
L
MAX
mA
I
G
=1.2I
GT
Ⅱ
I
H
I
T
=100mA
MAX
MIN
MIN
mA
V
/μ
s
V
/μ
s
V
D
=2/3V
DRM
Gate Open
dV/dt
500
30
T
j
=125
℃
(dV/dt)c Without
snubber T
j
=125
℃
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：
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JST41 Series
JieJie Microelectronics CO. , Ltd
STATIC CHARACTERISTICS
Symbol
Parameter
I
TM
=60A tp=380
μ
s
Value(MAX)
Unit
V
V
TM
I
DRM
I
RRM
T
j
=25
℃
T
j
=25
℃
T
j
=125
℃
1.55
10
5
μ
A
mA
V
D
=V
DRM
V
R
=V
RRM
THERMAL RESISTANCES
Symbol
Parameter
Value
0.9
Unit
TO-3P(Ins)
R
th(j-c)
junction to case(AC)
℃
/W
TO-247/ TG-C
0.8
ORDERING INFORMATION
J ST 41 Z -600 BW
BW:I
GT3
≤
50mA
B:I
GT1-3
≤
50mA I
GT4
≤
70mA
600:V
DRM
/V
RRM
≥
600V
JieJie Microelectronics Co.,Ltd
Triacs
I
T(RMS)
:40A
800:V
DRM
/V
RRM
≥
800V
1200:V
DRM
/V
RRM
≥
1200V
1600:V
DRM
/V
RRM
≥
1600V
Z:TO-3P(Ins)
S:TO-247 T:TG-C
TEL
：
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JST41 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
1.45
14.35
0.50
2.70
15.80
20.40
15.10
5.40
1.10
1.35
2.80
Max.
4.60
1.55
Min.
0.173
0.057
Max.
0.181
0.061
0.614
0.028
0.114
0.650
0.831
0.610
0.222
0.055
0.059
0.118
H
A
B
A
B
C
D
E
F
G
H
J
15.60 0.565
0.70
2.90
0.020
0.106
16.50 0.622
21.10 0.803
15.50 0.594
E
L
5.65
1.40
1.50
3.00
0.213
0.043
0.053
0.110
K
L
K
P
R
J
D
4.35
0.171
TO-3P Ins
TEL
：
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JST41 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
MARKING
TEL
：
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JST41 Series
JieJie Microelectronics CO. , Ltd
FIG.1
Maximum power dissipation versus RMS
FIG.2:
RMS on-state current versus case
on-state current
temperature
I
T(RMS)
(A)
60
P(w)
60
α=180°
50
50
TO-3P(Ins)
TG-C/
TO-247
40
30
40
30
20
10
20
10
0
I
T(RMS)
(A)
Tc (
℃
)
0
0
10
20
30
40
50
0
25
50
75
100
125
FIG.3:
Surge peak on-state current versus
FIG.4:
On-state characteristics (maximum
number of cycles
values)
I
TM
(A)
I
TSM
(A)
400
500
400
t=20ms
One cycle
Tj=125
℃
100
300
200
100
0
10
1
Tj=25
℃
V
TM
(V)
Number of cycles
10 100
0
1
2
3
4
5
1
1000
FIG.6:
Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
FIG.5:
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I
2
t (dI/dt < 50A/
μ
s)
2
I
TSM
(A), I
2
t (A s)
I
GT
,I
H
,I
L
(Tj) /I
GT
,I
H
,I
L
(Tj=25
℃
)
3.0
10000
2.5
2.0
I
GT
I
TSM
I
2
t
1.5
1.0
I
H
&I
L
1000
dI/dt
0.5
0.0
Tj (
℃
)
40 60
tp(ms)
-40 -20
0
20
80 100
120 140
0.01
0.1
1
10 20
Information furnished in this document is believed to be accurate and reliable. However,
Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from
that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the fourth version which is made in 9-June-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright
©
2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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：
+86-513-83639777
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