Jilin-Sino-Microelectronics-JCS730RC
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N
沟道增强型场效应晶体管
R
N-CHANNEL MOSFET
JCS730C
主要参数
MAIN CHARACTERISTICS
封装
Package
5.5 A
400 V
I
D
V
DSS
Rdson-max
(
@Vgs=10V
)
Qg-typ
1.0
Ω
14 nC
APPLICATIONS
用途
高频开关电源
电子镇流器
LED
电源
High frequency switching
mode power supply
Electronic ballast
LED
power supply
产品特性
低栅极电荷
FE
A
T
URES
Low gate charge
Low C
rss
(typical 4.5pF )
Fast switching
低
C
rss
(
典型值
4.5pF)
开关速度快
产品全部经过雪崩测试
高抗
dv/dt
能力
RoHS
产品
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息
ORDER MESSAGE
订 货 型 号
Order codes
印
记
封
装
有卤
–
条管
无卤
–
条管
有卤
–
编带
Halogen-
Reel
N/A
无卤
–
编带
Marking
Package
Halogen-
T
u
be
Halogen-Free-
Tube
JCS730VC-V-BR
JCS730RC-R-BR
JCS730SC-S-BR
JCS730BC-B-BR
JCS730CC-C-BR
JCS730FC-F-BR
Halogen-Free-
Reel
JCS730VC-V-B
JCS730RC-R-B
JCS730SC-S-B
JCS730BC-B-B
JCS730CC-C-B
JCS730FC-F-B
N/A
JCS730VC IPAK
JCS730RC-R-A JCS730RC-R-AR JCS730RC DPAK
JCS730SC-S-A JCS730SC-S-AR JCS730SC
TO-263
N/A
N/A
N/A
N/A
N/A
N/A
JCS730BC TO-262
JCS730CC TO-220C
JCS730FC TO-220MF
版本:
201806B
1/14
R
JCS730C
绝对最大额定值
ABSOLUTE RATINGS
(
T
c
=25
℃
)
数
值
Value
JCS730SC
/BC/CC
项
目
符
号
单
Parameter
Symbol
JCS730
VC/RC
位
JCS730FC
Unit
最高漏极-源极直流电压
Drain-Source Voltage
连续漏极电流
V
DSS
400
V
I
D
5.5
5.5*
3.5*
A
A
Drain Current
T=25
℃
T=100
℃
3.5
-continuous
最大脉冲漏极电流
(注
1
)
Drain Current – pulse
(
note 1
)
I
DM
22
22*
A
V
最高栅源电压
V
GSS
±30
328
Gate-Source Voltage
单脉冲雪崩能量
(注
2
)
Single Pulsed Avalanche
Energy
(
note 2
)
雪崩电流
(注
1
)
E
AS
mJ
Avalanche Current
(
note I
AR
1
)
5.5
7.3
A
重复雪崩能量
(注
1
)
Repetitive Avalanche
Energy
(
note 1
)
二极管反向恢复最大电压
变化速率
(注
3
)
E
AR
mJ
dv/dt
5.5
V/ns
W
Peak Diode Recovery
dv/dt
(
note 3
)
P
D
59
73
38
T
C
=25
℃
-Derate
above
25
℃
耗散功率
Power Dissipation
W/
0.48
0.58
0.3
℃
最高结温及存储温度
Operating and Storage
T
e
mperature Range
引线最高焊接温度
Maximum Lead
T
J
,
T
STG
-55
~
+150
℃
℃
T
L
300
T
e
mperature for Soldering
Purposes
*
漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
版本:
201806B
2/14
R
JCS730C
电特性
ELECTRICAL CHARACTERISTICS
项
目
符
号
测试条件
最大 典
型
最
大单 位
Parameter
关态特性
Off
–
Characteristics
漏-源击穿电压
Symbol
Tests conditions
Min Typ
Max Units
BV
DSS
I
D
=250
μ
A, V
GS
=0V
400
–
–
–
–
V
Drain-Source Voltage
击穿电压温度特性
ΔBV
DSS
/
Δ
I
D
=250
μ
A, referenced to
Breakdown Voltage
T
e
mperature
Coefficient
0.4
V/
℃
T
J
25
℃
V
DS
=400V,V
GS
=0V,
T
C
=25
℃
–
–
–
–
10
μA
100
μA
零栅压下漏极漏电流
I
DSS
Zero Gate Voltage Drain Current
V
DS
=320V, T
C
=125
℃
正向栅极体漏电流
Gate-body leakage current,
forward
I
GSSF
V
DS
=0V, V
GS
=30V
V
DS
=0V, V
GS
=-30V
–
–
–
–
100 nA
-100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
I
GSSR
通态特性
On-Characteristics
阈值电压
V
GS(th)
R
DS(ON)
g
fs
V
DS
= V
GS
, I
D
=250
μ
A
2.0
–
4.0
V
Ω
S
Gate Threshold Voltage
静态导通电阻
Static Drain-Source
On-Resistance
V
GS
=10V ,
I
D
=2.75A
–
–
0.85 1.0
正向跨导
V
DS
= 40V, I
D
=2.75
A
(
note
4
)
4.95
–
Forward Transconductance
动态特性
Dynamic Characteristics
输入电容
V
DS
=25V,
V
GS
=0V,
f=1.0MH
Z
C
iss
C
oss
C
rss
–
–
–
537.4 698
pF
80.6 104
pF
4.5 5.8
pF
Input capacitance
输出电容
Output capacitance
反向传输电容
Reverse transfer capacitance
版本:
201806B
3/14
R
JCS730C
电特性
ELECTRICAL CHARACTERISTICS
开关特性
Switching Characteristics
延迟时间
Turn-On delay time
上升时间
Turn-On rise time
延迟时间
Turn-Off delay time
下降时间
Turn-Off Fall time
栅极电荷总量
T
o
tal Gate Charge
栅-源电荷
Gate-Source charge
栅-漏电荷
Gate-Drain charge
t
d
(on)
t
r
V
DD
=200V,I
D
=5.5A,R
G
=25Ω
(
note 4
,
5
)
–
–
–
–
–
–
–
17 40
ns
20 120
ns
45 180
ns
18 110
ns
14 17
nC
t
d
(off)
t
f
V
DS
=320V ,
Q
g
I
D
=5.5A
Q
gs
Q
gd
3.1
5.4
–
–
nC
nC
V
GS
=10V
(
note 4
,
5
)
漏-源二极管特性及最大额定值
Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
正向最大脉冲电流
I
S
–
–
–
–
–
5.5
22
A
A
V
Maximum Pulsed Drain-Source
Diode Forward Current
正向压降
I
SM
Drain-Source Diode Forward
Voltage
V
SD
V
GS
=0V,
I
S
=5.5A
–
1.5
–
反向恢复时间
t
rr
–
–
278
ns
Reverse recovery time
反向恢复电荷
V
GS
=0V, I
S
=5.5A
dI
F
/dt=100A/
μ
s (note
4)
Q
rr
1.13 –
μC
Reverse recovery charge
热特性
THERMAL CHARACTERISTIC
最大
项
目
符
号
单 位
Max
Parameter
Symbol
Unit
℃
/W
℃
/W
JCS730V/R JCS730S/B/C
JCS730F
结到管壳的热阻
R
th(j-c)
2.05
110
1.71
62.5
3.31
62.5
Thermal Resistance, Junction to Case
结到环境的热阻
R
th(j-A)
Thermal Resistance, Junction to Ambient
Notes:
注释:
1
:
Pulse width limited by maximum junction
temperature
1
:脉冲宽度由最高结温限制
2
:
L=19mH, I
AS
=5.5A, V
DD
=50V, R
G
=25 Ω,
起始结
温
T
J
=25
℃
2
:
L=19mH, I
AS
=5.5A, V
DD
=50
V
,
R
G
=25 Ω,Starting
T
J
=25
℃
3
:
I
SD
≤
5.5
A,di/dt ≤
300A/
μs,VDD≤BV
DSS
,
起始结温
T
J
=25
℃
3
:
I
SD
≤
5.5
A,di/dt ≤
300A/
μs,VDD≤BV
DSS
, Starting
T
J
=25
℃
4
:脉冲测试:脉冲宽度
≤300μ
s,
占空比
≤2
%
5
:基本与工作温度无关
4
:
Pulse
T
e
st
:
Pulse Width ≤300μs,Duty Cycle≤2
%
5
:
Essentially independent of operating temperature
版本:
201806B
4/14
R
JCS730C
特征曲线
ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
V
GS
Top
15V
10V
8V
10
7V
6.5V
6V
10
25
℃
5.5V
Bottom 5V
150
℃
1
N o t
e
:
s
Notes
:
1 . 2 5 0 μ s
p u l s e
t e
1. 250μs pulse test
2. T
C
=25
℃
2 . V =40V
DS
1
0 . 1
2
4
6
8
10
1
10
V
DS
[V]
V
G S
[ V ]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
1 . 0 5
1 . 0 0
10
25
℃
0 . 9 5
V
GS
= 1 0 V
0 . 9 0
1
V
GS
= 2 0 V
0 . 8 5
150
℃
Notes
:
1. 250μs pulse test
0 . 8 0
Note
:
T
j
=25
℃
2. V
GS
=0V
0 . 7 5
0.1
0
1
2
3
4
5
6
7
8
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
[A]
V
SD
[V]
Capacitance Characteristics
Gate Charge Characteristics
12
10
8
V
DS
=320V
V
DS
=200V
V
DS
=80V
6
4
2
0
0
4
8
12
16
Q
g
Toltal Gate Charge [nC]
版本:
201806B
5/14
R
JCS730C
特征曲线
ELECTRICAL CHARACTERISTICS (curves)
Breakdown Voltage Variation
On-Resistance Variation
vs. Temperature
vs. Temperature
1.2
3 . 0
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
1.1
1.0
Notes
:
0.9
N o t
e
:
s
1. V
GS
=0V
1 .
V
= 1 0 V
GS
2. I
D
=250μA
2 .
D
=
I 2
. 7 5 A
0.8
-75
– 7 5
– 5 0
– 2 5
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
j
[
℃
]
T
j
[
℃
]
Maximum Safe Operating Area
For JCS730F
Maximum Safe Operating Area
For JCS730V/R/S/B/C
Maximum Drain Current
vs. Case Temperature
版本:
201806B
6/14
R
JCS730C
特征曲线
ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS730VC/RC
Transient Thermal Response Curve
For JCS730SC/BC/CC
Transient Thermal Response Curve
For JCS730FC
版本:
201806B
7/14
R
JCS730C
外形尺寸
PACKAGE MECHANICAL DATA
IPAK
单位
Unit
:
mm
版本:
201806B
8/14
R
JCS730C
外形尺寸
PACKAGE MECHANICAL DATA
DPAK
单位
Unit
:
mm
编带
REEL
版本:
201806B
9/14
R
JCS730C
外形尺寸
PACKAGE MECHANICAL DATA
TO-262
单位
Unit
:
mm
版本:
201806B
10/14
R
JCS730C
外形尺寸
PACKAGE MECHANICAL DATA
TO-263
单位
Unit
:
mm
版本:
201806B
11/14
R
JCS730C
外形尺寸
PACKAGE MECHANICAL DATA
TO-220C
单位
Unit
:
mm
版本:
201806B
12/14
R
JCS730C
外形尺寸
PACKAGE MECHANICAL DATA
TO-220MF
单位
Unit
:
mm
版本:
201806B
13/14
R
JCS730C
注意事项
NOTE
1.
吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
1. Jilin
Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2.
购买时请认清公司商标,如有疑问请与公
2. We
strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
司本部联系。
3.
在电路设计时请不要超过器件的绝对最大
3. Please
do not exceed the absolute
maximum ratings of the device when circuit
designing.
额定值,否则会影响整机的可靠性。
4.
本说明书如有版本变更不另外告知
4. Jilin
Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD.
联系方式
吉林华微电子股份有限公司
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
公司地址:吉林省吉林市深圳街
99
号
Post Code: 132013
邮编:
132013
T
e
l
:
86-432-64678411
总机:
86-432-64678411
传真:
86-432-64665812
Fax
:
86-432-64665812
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
市场营销部
地址:吉林省吉林市深圳街
99
号
Post Code: 132013
邮编:
132013
T
e
l: 86-432-64675588
64675688
电话:
86-432-64675588
64675688
64678411-3098/3099
64678411-3098/3099
传真
: 86-432-64671533
Fax: 86-432-64671533
版本:
201806B
14/14
