JSMSEMI-AO4459

AO4459  

P-Channel Enhancement Mode Power MOSFET  

Description  

The 4459 uses advanced trench technology to provide  

excellent R

DS(ON)

, low gate charge and operation with gate  

voltages as low as 4.5V. This device is suitable for use as a  

load switch or in PWM applications.  

D

G

S

General Features  

●

V

DS

= -30

V

,

I

D

= -6.5A  

Schematic diagram  

Marking and pin Assignment  

R

DS(ON)

< 38m

Ω

@ V

GS

=-10V  

R

DS(ON)

< 65m

Ω

@ V

GS

=-4.5V  

●

High Power and current handing capability  

●

Lead free product is acquired  

●

Surface Mount Package  

Application  

●

PWM applications  

●

Load switch  

●

Power management  

Absolute Maximum Ratings (T

A

=25

℃

unless otherwise noted)  

Parameter Symbol  

Limit  

-30  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

Drain Current-Continuous  

V

DS  

V

GS  

I

D  

±20  

V

-6.5  

A

Drain Current-Pulsed

 

(Note 1)  

-20  

A

I

DM  

Maximum Power Dissipation  

2.5  

W

℃

P

D  

Operating Junction an

d

Storage Temperature Range  

-55

T

o

1

50  

T

J

,T

STG  

Thermal Characteristic  

Thermal Resistance,Junction-to-Ambient

(Note 2)  

R

θ

JA  

50  

℃

/W  

Electrical Characteristics (T

A

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ

 

Max  

Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

BV

DSS  

V

GS

=0V I

D

=-250

μ

A  

-30  

-33  

–

V

第1页,共6页  

AO4459  

P-Channel Enhancement Mode Power MOSFET  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

On Characteristics

(Note 3)  

Gate Threshold Voltage  

I

DSS  

I

GSS  

V

DS

=-24V,V

GS

=0V  

V

GS

=±20V,V

DS

=0V  

–

–

–

–

-1  

μ

A  

±100  

nA  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=-250

μ

A  

-1  

–

-1.6  

38  

56  

7

-3  

58  

75  

–

V

m

Ω  

m

Ω  

S

V

GS

=-10V, I

D

=-6.5A  

Drain-Source On-State Resistance  

V

GS

=-4.5V, I

D

=-5.2A  

–

Forward Transconductance  

Dynamic Characteristics

(Note4)  

Input Capacitance  

V

DS

=-15V,I

D

=-5.1A  

4

C

lss  

C

oss  

C

rss  

–

–

–

980  

390  

135  

–

–

–

PF  

PF  

PF  

V

DS

=-15V,V

GS

=0V,  

F=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics

(Note 4)  

Turn-on Delay Time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

14  

12  

56  

20  

11  

2.0  

2.8  

–

–

–

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

DD

=-15V, ID=-1A,  

V

GS

=-10V,R

GEN

=6

Ω  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

–

–

–

V

DS

=-15V,I

D

=-5.1A,V

GS

=-10V  

V

GS

=0V,I

S

=-5.1A  

Gate-Source Charge  

Gate-Drain Charge  

Drain-Source Diode Characteristics  

Diode Forward Voltage

(Note 3)  

V

SD  

–

–

-1.2  

V

Notes:  

1.

Repetitive Rating: Pulse width limited by maximum junction temper

a

ture.  

2.

Surface Mounted on FR4 Board, t

≤

10 sec.  

3.

Pulse Test: Pulse Width

≤

300

μ

s, Duty Cycle

≤

2%.  

4.

Guaranteed by design, not subject to productio

n  

第2页,共6页  

AO4459  

P-Channel Enhancement Mode Power MOSFET  

Typical Electrical and Thermal Characteristics  

t

on  

t

r  

t

off  

t

f  

t

d(on)  

V

OUT  

V

IN  

t

d(off)  

90%  

90%  

INVERTED  

10%  

90%  

10%  

50%  

50

%  

10%  

PULSE WIDT

H  

Figure 1:Switching Test Circuit  

Figure 2:Switching Waveforms  

T

J

-Junction

T

e

mperature(

℃

)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 3 Power Di

ssi

pation  

Figure 4 Drain Current  

Vds Drain-Source Voltage (V)  

I

D

– Drain Current (A)  

Figure 5 Output Characteristics  

Figure 6 Drain-Source On-Resistance  

第3页,共6页  

AO4459  

P-Channel Enhancement Mode Power MOSFET  

Vgs Gate-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 7 Transfer Characteristics  

Figure 8 Drain-Source On-Resistance  

Vgs Gate-Source

Volta

ge (V)  

Vds Drain-Source Voltage (V)  

Figure 9 Rdso

n v

s V

gs  

Figure 10 Capacitance vs Vds  

Qg Gate Charge (nC)  

Vsd Source-Drain Voltage (V)  

Figure 11 Gate Charge  

Figure 12 Source- Drain Diode Forward  

第4页,共6页  

AO4459  

P-Channel Enhancement Mode Power MOSFET  

Vds Drain-Source Voltage (V)  

Figure 13 Safe Operation Area  

Square Wave Pluse Duration(sec)  

Figure 14 Norm

aliz

ed Maximum Transient Thermal Impedance  

第5页,共6页  

AO4459  

P-Channel Enhancement Mode Power MOSFET  

SOP-8 Package Information  

Dimensions In Millimeters  

Dimensions In Inches  

Min.  

Symbol  

Min.  

Max.  

1.750  

0.250  

1.550  

0.510  

0.250  

5.100  

4.000  

6.200  

Max.  

0.069  

0.010  

0.061  

0.020  

0.010  

0.200  

0.157  

0.244  

A

A1  

A2  

b

1.350  

0.100  

1.350  

0.330  

0.170  

4.700  

3.800  

5.800  

0.053  

0.004  

0.053  

0.013  

0.006  

0.185  

0.150  

0.228  

c

D

E

E1  

e

1.270(BSC)  

0.050(BSC)  

L

0.400  

1.270  

0.016  

0.050  

θ

0

°

 

8

°  

0

°  

8

°  

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