JSMSEMI-AOD403
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AOD403
30V P-ChannelMOSFET
Description
：
This P-Channel MOSFET uses advanced trench technology and
design to provide excellent R
DS(on)
with low gate charge.
It can be used in a wide variety of applications.
D
G
Features
：
S
1) V
DS
=-30V,I
D
=-80A,R
DS(ON)
<7.5 m
Ω
@V
GS
=-1
.
0 V
2) Low
gate charge.
3) Green
device available.
4) Advanced
high cell denity trench technology for ultra Iow R
DS(ON)
.
5) Excellent
package for good heat dissipation.
Absolute Maximum Ratings
：
(T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Ratings
-30
Units
V
Drain-Source Voltage
Gate-Source Voltage
V
GS
V
±
20
-80
Continuous Drain
nt-T
C
=25
℃
Continuous Drain Current-T
C
=100
℃
Pulsed Drain Current
note1
A
I
D
-49
A
I
DM
E
AS
-260
A
Single Pulsed Avalanche Energy
note2
Total Power Dissipation
164
mJ
W
℃
P
D
84
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +175
Thermal Characteristics
：
Symbol
R
ƟJC
Parameter
Thermal Resistance,Junction to Case
Max
Units
1.5
℃
/W
第1页,共5页
AOD403
30V P-ChannelMOSFET
Electrical Characteristics
：
(T
J
=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
Drain-Sourtce Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
-30
—
—
—
—
—
-1
V
V
GS
=0V,I
D
=250
μ
A
BV
DSS
μ
A
nA
I
DSS
I
GSS
V
GS
=0V, V
DS
=-30V,
T
J
=25
℃
V
GS
=
±
20V, V
DS
=0A
—
±
100
On Characteristics
V
GS(th)
GATE-Source Threshold Voltage
V
GS
=V
DS
, I
D
=250
μ
A
V
GS
=-10V,I
D
=-30A
V
GS
=-4.5V,I
D
=-20A
-1.0
—
-1.6
5.8
9
-2.5
7.5
V
Static Drain-Source
On-Resistance
note3
m
Ω
R
DS(ON)
—
12.6
Dynamic Characteristics
Input Capacitance
—
—
—
4550
525
—
—
—
C
iss
C
oss
C
rss
Output Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHz
pF
Reverse Transfer Capacitance
480
Switching Characteristics
Turn-On Delay Time
—
—
—
—
—
—
—
19
15
65
36
45
8
—
—
—
—
—
—
—
ns
ns
ns
ns
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
Rise Time
V
DD
=-15V, I
D
=-30A,
Turn-Off D
ay Time
Fall Time
V
GS
=-10V, R
G
=2.5
Ω
Total Gate Charge
Gate-Source Charge
Gate-Drain “Miller” Charge
Q
g
V
GS
=-10V, V
DS
=-15V,
I
D
=-20A
Q
gs
Q
gd
12
Drain-Source Diode Characteristics
Drain Diode Forward Voltage
—
-0.8
-1.2
V
V
SD
V
GS
=0V,I
S
=-30A,
T
J
=25
℃
第2页,共5页
AOD403
30V P-ChannelMOSFET
Continuous Source Current
Pulsed Source Current
—
—
—
—
-80
A
A
I
S
V
G
=V
D
=0V , Force Current
-240
I
SM
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. E
AS
condition: T
J
=25
℃
, V
DD
= -15
V
,
V
G
= -10
V
,
R
G
=25Ω, L=0.5mH, I
AS
= -24A
3. Pulse
T
e
st: Pulse Width≤300μs, Duty Cycle≤2%
Typical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
-I
D
(A)
-I
D
(A)
100
100
80
T
J
=-
25
℃
-10V
80
60
-4.5V
-4V
60
125
℃
40
20
0
40
20
0
-3V
V
GS
=-2V
-V
GS
(V)
1.5 2.0 2.5 3.0 3.5 4.0
-V
DS
(V)
0
1.0
2.0
3.0
4.0
5.0
0
0.5 1.
4.5
1.4
30
Figure1:
Output Characteristics
Figure 2:
Typical Transfer Characteristics
R
DS(ON)
(mΩ)
-I
S
(A)
14
10
12
10
8
V
GS
=-4.5V
V
GS
T
J
=150
℃
T
J
=-25
℃
T
J
=-50
℃
1
6
4
-I
D
(A)
30
-V
SD
(V)
0.6 0.8
2
0.1
0.0
0
10
20
40
50
60
0.2
0.4
1.0
1.2
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
-V
GS
(V)
C(pF)
10
8
V
DS
=-15V
I
D
=-20A
10
4
C
iss
6
4
2
0
10
3
10
2
C
oss
C
rss
-V
DS
(V)
15
Q
g
(nC)
0
10
20
30
40
50
0
5
10
20
25
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
第3页,共5页
AOD403
30V P-ChannelMOSFET
-V
BR(DSS)
R
DS
(on)
2.5
2.0
1.3
1.2
1.1
1.0
1.5
1.0
0.5
0.9
0
Tj (
℃
)
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
50
10
150
200
Figure 8:
Normalized on Resista
ce vs.
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Junction Temperature
-I
D
(A
)
-I
D
(A
)
10
3
80
Limited by R
DS(on)
10μs
100μs
1ms
10
2
60
40
10ms
10
1
10
0
10
-1
100ms
DC
20
0
T
C
=25
℃
Single pulse
T
C
(
℃
)
75 100
-V
DS
(V)
1
0.01
0.1
10
100
0
25
50
125
150
175
Figure 10:
Maximum Continuous Drain Current
vs. Case Temperature
Figure 9:
Maximum Safe Operating Area
Zth
J-C
(
℃
/W)
10
1
10
0
10
-1
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-2
10
-3
Notes:
Single pulse
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Figure.11:
Maximum Effective
Transient Thermal Impedance, Junction-to-Case
第4页,共5页
