JSMSEMI-AOD407
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AOD407
60V P-Channel MOSFET Transistor
Description
：
This P-Channel MOSFET uses advanced trench technology and
design to provide excellent R
DS(on)
with low gate charge.
It can be used in a wide variety of applications.
D
G
Features
：
S
1) V
DS
=-60V,I
D
=-20A,R
DS(ON)
<68m
Ω
@V
GS
=-10V
2) Low
gate charge.
3) Green
device available.
4) Advanced
high cell denity trench technology for ultra Iow R
DS(ON)
.
5) Excellent
package for good heat dissipation.
Absolute Maximum Ratings
：
(T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Ratings
-60
Units
V
Drain-Source Voltage
Gate-Source Voltage
V
GS
V
±
20
-20
Continuous Drain
ent
25
℃
1
Continuous Drain Current-TC=100
℃
1
Pulsed Drain Current
2
A
I
D
-11
A
I
DM
E
AS
–36
A
Sin
le Pulse Avalanche Energy
3
Aval
nche Current
35.4
mJ
A
I
AS
-26.6
34.7
Total Power Dissipation-TC=25
℃
4
Operating and Storage Junction Temperature Range
P
D
W
℃
T
J
, T
STG
-55 to +150
第1页,共6页
AOD407
60V P-Channel MOSFET Transistor
Thermal Characteristics
：
Symbol
R
ƟJC
Parameter
Max
3 6
62
Units
℃
/W
℃
/W
Thermal Resistance Junction to Case
1
R
ƟJA
Thermal Resistance- Junction to Ambient
1
Electrical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
Drain-Sourtce Breakdown
Voltage
V
GS
=0V,I
D
=250
μ
A
-60
—
—
V
BV
DSS
—
—
—
—
—
—
1
5
μ
A
μ
A
nA
V
GS
=0V, V
DS
=-48V,
T
J
=25
℃
V
GS
=0V, V
DS
=-48V,
T
J
=55
℃
V
GS
=
±
20V, V
DS
=0A
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
I
DSS
±
100
I
GSS
On Characteristics
V
GS(th)
GATE-Source Threshold Voltage
Drain-Source On Resista
ce
2
Forward Tran
ductance
V
G
=V
D
, I
D
=250
μ
A
V
GS
=-10V,I
D
=-12A
V
GS
=-4.5V,I
D
=-8A
V
DS
=-5V , I
D
=-12A
-1.2
—
—
—
-2.5
68
V
m
Ω
m
Ω
S
R
DS(ON)
—
—
105
—
—
15.4
G
FS
Dynamic Characteristics
In
ut Capacitance
—
—
—
1440
97
—
—
—
C
iss
C
oss
C
rss
Output Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHz
pF
Reverse Transfer Capacitance
65
Switching Characteristics
Turn-On Delay Time
—
—
—
—
—
—
28.8
19.8
60.8
7.2
—
—
—
—
—
—
ns
ns
ns
ns
nC
nC
t
d(on)
t
r
t
d(off)
t
f
Rise Time
V
DD
=-15V, I
D
=-1A,
Turn-Off Delay Time
Fall Time
V
GS
=-10V, R
G
=3.3
Ω
Total Gate Charge
Gate-Source Charge
9.86
3.08
V
GS
=-4.5V, V
DS
=-48V,
I
D
=-10A
Q
g
Q
gs
第2页,共6页
AOD407
60V P-Channel MOSFET Transistor
Gate-Drain “Miller” Charge
Gate Resistance
—
—
2.95
13.5
—
—
nC
Q
gd
R
G
V
DS
=0V , V
GS
=0V , f=1MHz
Ω
Drain-Source Diode Characteristics
Drain Diode Forward Voltag
e
2
—
—
—
—
—
—
-1.2
-18
-3
V
A
A
V
SD
I
S
V
GS
=0V,I
S
=-1A,
T
J
=25
℃
Continuous Source Current
1,5
Pulsed Source Current
2,5
V
G
=V
D
=0V , Force Current
I
SM
Notes:
1.The data tested by surface mounted on a 1 inch
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-26.6A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Typical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
160
120
80
12
10
8
I
D
=
V
GS
=-3V
6
V
GS
=-10V
V
GS
=-7V
V
GS
=-5V
4
2
V
GS
=-4.5V
0
40
0
0.5
1
1.5
2
2
4
6
8
10
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
I
D
=-12A
10
8
6
6
T
J
=150
℃
T
J
=25
℃
4
4
2
2
0
0
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
第3页,共6页
AOD407
60V P-Channel MOSFET Transistor
2.5
1.5
2.0
1
1.5
1.0
0.5
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
o
C)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
10000
1000
100
100.00
F=1.0MHz
10us
100us
1ms
Ciss
10.00
1.00
0.10
0.01
10ms
100ms
DC
Coss
Crss
T =25
℃
C
Single Pulse
10
0.1
1
10
-V
DS
(V)
100
1000
1
1
5
9
13
21
25
-V
DS
Drain to Sour
e Vo
V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
DUTY=0.5
0.2
.1
0.1
0.01
0.05
0.0
0.01
P
DM
T
ON
T
SINGLE
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
第4页,共6页
AOD407
60V P-Channel MOSFET Transistor
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
第5页,共6页
