JSMSEMI-AOD417
| Part # | JSMSEMI-AOD417 |
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AOD417
30V P-Channel MOSFET
Description
：
This P-Channel MOSFET uses advanced trench technology and
design to provide excellent R
DS(on)
with low gate charge.
It can be used in a wide variety of applications.
D
G
Features
：
S
1) V
DS
=-30V,I
D
=-40A,R
DS(ON)
<20m
Ω
@V
GS
=-10V
2) Low
gate charge.
3) Green
device available.
4) Advanced
high cell denity trench technology for ultra R
DS(ON)
5) Excellent
package for good heat dissipation.
.
Absolute Maximum Ratings
：
(T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Ratings
Units
Drain-Source Voltage
Gate-Source Voltage
-30
±
20
-40
V
V
V
GS
Continuous Drain
rent
I
D
Continuous Drain Current-TC=100
℃
Pulsed Drain Current
1
-22
A
-140
E
AS
P
D
Sin
le Pulse Avalanche Energy
Pow
r Dissipation
—
mJ
W
40
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
℃
Thermal Characteristics
：
Symbol
R
Ɵ
JC
Parameter
Max
3.1
62
Units
Thermal Resistance,Junction to Case
℃
/W
R
Ɵ
JA
Thermal Resistance,Junction to Ambient
第1页,共5页
AOD417
30V P-Channel MOSFET
Package Marking and Ordering Information
：
Part NO.
AOD417
Marking
AOD417
Package
TO-252
Electrical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
Drain-Sourtce Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
V
GS
=0V,I
D
=250
μ
A
-30
—
—
—
—
—
-1
V
BV
DSS
V
GS
=0V, V
DS
=-30V, TJ=25
℃
V
GS
=
±
20V, V
DS
=0A
μ
A
nA
I
DSS
I
GSS
—
±
100
On Characteristics
V
GS(th)
GATE-Source Threshold Voltage
Drain-Source On Resistance
Forward Transconductance
V
GS
=V
DS
, I
D
=250
μ
A
V
GS
=-10V,I
D
=-8
V
GS
=-4.5V,I
D
=-5A
V
DS
=-10V, I
D
=-3A
-1.0
—
-1.6
16.5
25.6
6.8
-2.5
20
V
m
Ω
S
R
DS(ON)
—
32
—
—
G
FS
Dynamic Characteristics
Input Capacitance
—
—
—
1250
160
90
1820
235
C
iss
C
oss
C
rss
Output Capac
e
V
DS
=-15V, V
GS
=0V, f=1MHz
pF
Revers
sfer Capacitance
130
Switching Characteristics
Turn-On Delay Time
2,3
—
—
—
—
—
—
—
5.8
18.8
46.9
12.3
11
11
36
89
23
17
6
ns
ns
ns
ns
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
Rise Time
2,3
V
DS
=-15V, I
D
=-1A,
Turn-Off Delay Time
2,3
Fall Time
2,3
R
GEN
=6
Ω
, V
GS
=-10V
T
o
tal Gate Charge
2,3
Gate-Source Charge
2,3
Gate-Drain
“
Miller
”
Charge
2,3
Q
g
V
GS
=4.5V, V
DS
=15V,
I
D
=5A
3.4
Q
gs
Q
gd
4.2
8
Drain-Source Diode Characteristics
Source-Drain Diode Forward Voltage
2
V
GS
=0V,I
S
=-1A, T
J
=25
℃
—
—
-1
V
V
SD
第2页,共5页
AOD417
30V P-Channel MOSFET
Notes:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3. Essentially independent of operating temperature.
Typical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
Fig.2 Normalized RDSON vs. T
J
Fig.1 Continuous Drain Current vs. T
C
Fig.4 Gate Charge Waveform
Fig.3 Normalized V
th
vs. T
J
第3页,共5页
AOD417
30V P-Channel MOSFET
Fig.6
ximum Safe Operation Area
Fig.5 Normalized Transient Impedance
Fig.8 Gate Charge Waveform
Fig.7 Switching Time Waveform
第4页,共5页
AOD417
30V P-Channel MOSFET
Package Outline: TO-252
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
6.30
0.00
5
2.
0.30
0.60
0.70
0.30
0.70
9.60
2.70
0.40
5.10
2.09
Max.
6.90
0.16
6.30
2.50
0.70
0.90
1.00
0.60
1.20
10.50
3.10
1.00
5.50
2.49
Min.
0.248
0.000
0.224
0.083
0.012
0.024
0.028
0.012
0.028
0.378
0.106
0.016
0.201
0.082
Max.
0.272
0.006
0.248
0.098
0.028
0.035
0.039
0.024
0.047
0.413
0.122
0.039
0.217
0.098
A
A1
B
C
D
E1
E2
F
G
L1
L2
H
M
N
R
0.30
0.012
T
1.40
5.10
1.60
6.30
0.055
0.201
0.063
0.248
Y
第5页,共5页
