JSMSEMI-APM2315AC

APM2315AC  

-30V P-Channel Enhancement Mode MOSFET  



FEATURE  









-30V/-

5.6A

, R

DS(ON)

=37 m

Ω

(typ.)@V

GS

=-10V  

52  

m

Ω

(typ.)@V

GS

=-4.5V  

-30V/-

4

.

3

A, R

DS(ON)  

=

Super high design for extremely low R

DS(ON)  

Exceptional on-resistance and Maximum DC  

current capability  





Full RoHS compliance  

SOT23-3L package design  



DESCRIPTION  



APPLIC

A

T

I

ONS  

Th

e 8013

is the P-Channel logic enhancement  

mode power field effect transistor is produced using  

high cell density advanced trench technology to  

provide excellent R

DS(ON).  









High Frequency Point-of-load Synchronous  

Buck Converter for MB/NB/UMPC/VGA  

DC/D

C Converter  

Load Switch  

This device is suitable for use as a load switch or in  

PWM and gate charge for most of the synchronous  

buck converter applications  



ABSOLUTE MAXIMUM R

A

TINGS

( T

A

= 25

℃

Unless otherwise noted )  

Symbol  

V

DSS  

Parameter  

T

y

pical  

-30  

Unit  

V

Drain-Sour

ce V

oltage  

Gate-Source Voltage  

V

GSS  

±20  

V

Continuous Drain Current (T

C

=25

℃

)  

Continuous Drain Current (T

C

=70

℃

)  

Pulsed Drain Current  

–

5.6  

A

I

D  

V

GS

=-10V  

–

5

.

0  

I

DM  

I

S  

-20  

A

A

Continuous Source Current (Diode Conduction)  

-1.4  

T

A

=25

℃  

T

A

=70

℃  

1.4  

P

D  

Power Dissipation  

W

0.9  

℃

℃

T

J  

Operation Junction

T

e

mperature  

Storage

T

e

mperature Range  

150  

T

STG  

R

θ

JA  

-55~+150  

120  

℃

/W  

Thermal Resistance Junction to Ambient  

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  

Absolute maximum ratings are stress rating only and functional device operation is not implied  

第1页,共5页  

APM2315AC  

-30V P-Channel Enhancement Mode MOSFET  



ELECTRICAL CHARACTERISTICS

(T

A

=25

℃

Unless otherwise noted)  

Symbol  

Parameter  

Condition  

Min  

T

y

p  

Max  

Unit  

Static Parameters  

V

(BR)DSS  

V

GS(th)  

I

GSS  

Drain-Source Breakdown Voltage  

Gate Threshold Voltage  

V

GS

=0V, I

D

=-250Ua  

V

DS

=V

GS

, I

D

=-250uA  

V

DS

=0V, V

GS

=±20V  

V

DS

=-24V, V

GS

=0  

V

DS

=-24V, V

GS

=0  

T

J

=55

℃

 

-30  

V

V

-1.0  

-2.0  

±100  

-1  

Gate Leakage Current  

nA  

I

DSS  

Zero Gate Voltage Drain Current  

Drain-Source On-Resistance  

uA  

m

Ω

 

V

-5  

V

GS

=-10V, I

D

=-

5

.

6

A  

V

GS

=-4.5V, I

D

=-

4

.

3

A  

37  

52  

50  

75  

R

DS(ON)  

Source-Drain Diode  

V

SD  

Diode Forward Voltage  

I

S

=-1.0A, V

GS

=0V  

-0.7  

-1.0  

Dynamic Parameters  

Q

g  

Q

gs  

Q

gd  

C

iss  

C

oss  

C

rss  

T

d(o

n

)  

T

r  

T

o

tal Gate Charge  

V

DS

=-20

V  

V

GS

=-4.5V  

I

D

=-4.0A  

V

DS

=-25V  

V

GS

=0V  

6

Gate-Source Charge  

Gate-Drain Charge  

2.7  

3.1  

645  

272  

105  

9

nC  

pF  

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

f=1MHz  

V

DS

=-12V  

I

D

=-4A  

T

u

rn-On

T

i

me  

T

u

rn-Off

T

i

me  

16.5  

22  

nS  

V

GEN

=-10V  

R

G

=3.3

Ω

 

T

d(off)  

T

f  

21  

Note: 1. Pulse test: pulse w

idt

h<=300uS, duty cycle<=2%  

2.Static parameters are based on package level with recommended wire bonding  

第2页,共5页  

APM2315AC  

-30V P-Channel Enhancement Mode MOSFET  



TYPICAL CHARACTERISTICS

(25

℃

Unless Note)  

第3页,共5页  

APM2315AC  

-30V P-Channel Enhancement Mode MOSFET  



TYPICAL CHARACTERISTICS

(cont

inuous

)  

第4页,共5页  

APM2315AC  

-30V P-Channel Enhancement Mode MOSFET  



SOT23-3L

P

A

CKAGE OUTLINE DIMENSIONS  

第5页,共5页