JSMSEMI-IRFB4321PBF

IRFB4321PBF  

200V N-Channel MOSFET  

FEATURES  



Proprietary New Planar Technology  



RDS(ON),typ.=50m

Ω@VGS=10V  



Low Gate Charge Minimize Switching Loss  



Fast Recovery Body Diode  

APPLICATIONS  



DC-DC Converters  



DC-AC Inverters for UPS  



SMPS and Motor controls  

Absolute Maximum Ratings

T

C

= 25ºC, unless otherwise

no

ted  

Value  

Parameter  

Symbol  

Unit  

TO-220  

Drain-Source Voltage  

Continuous Drain Current  

Pulsed Drain Current  

V

DSS  

I

D  

200  

50  

V

A

A

(note1)  

I

DM  

180  

Gate-Source Voltage  

V

GSS  

E

AS  

I

AS  

V

±

20  

191  

31  

Single Pulse Avalanche Energy  

Avalanche Current  

(note1)  

(note1)  

(note1)  

mJ  

A

Repetitive Avalanche

E

nergy  

Power Dissipat

i

on (T

C

= 25ºC)  

E

AR  

124  

mJ  

P

D  

104  

W

ºC  

T

J

, T

stg  

Operating Junction and Storage Temperature Range  

-55~+150  

Thermal Resistance  

Value  

Parameter  

Symbol  

Unit  

TO-220  

1.2  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient  

R

thJC  

R

thJA  

ºC/W  

60  

第1页,共6页  

IRFB4321PBF  

200V N-Channel MOSFET  

Specifications

T

J

= 25ºC, unless otherwise noted  

Value  

Unit  

Parameter  

Symbol  

Test Conditions  

Min.  

Typ.  

Max.  

Static  

V

(BR)DSS  

Drain-Source Breakdown Voltage  

V

GS

= 0V, I

D

= 250µA  

200  

—  

—  

1

V

V

DS

= 200V, V

GS

= 0V, T

J

= 25ºC  

V

DS

= 200V, V

GS

= 0V, TJ = 125ºC  

—  

—  

—  

—  

—  

—  

I

DSS  

Zero Gate Voltage Drain Current  

μA  

100  

±

100  

4.0  

Gate-Source Leakage  

Gate-Source Threshold Voltage  

Drain-Source On-Resistance (Note4)  

Forward Transconductance (Note4)  

Dynamic  

I

GSS  

V

GS(th)  

R

DS(on)  

gfs  

nA  

V

V

GS

=

±

20V

，

V

DS

= 0V  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10V, I

D

= 20A  

2.0  

—  

—  

0

.035  

16  

0.05  

Ω

S

VDS = 25V, ID = 20A  

—  

—  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

2800  

355  

101  

154  

13  

—  

—  

—  

V

GS

= 0V,  

V

DS

= 25V,  

f = 1.0MHz  

Output Capacitance  

pF  

nC  

Reverse Transfer Capacitance  

Total Gate Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Gate-Source Charge  

Gate-Drain Charge  

V

D

D

= 160V, I

D

= 40A,  

—  

—  

—  

—  

—  

—  

58  

Turn-on Delay Time  

46  

Turn-on Rise Time  

54  

V

DD

= 160V, I

D

= 40A,  

VGS =15V.RG =

25Ω  

ns  

Turn-off Delay Time  

t

d(off)  

t

f  

360  

96  

Turn-off Fall Time  

Drain-Source Body Diode Characteristics  

Continuous Source Current  

Pulsed Source Curr

e

nt  

Body Forward Voltage  

I

SD  

—  

—  

—  

—  

—  

—  

—  

50  

180  

1.4  

—  

Integral PN-diode in MOSFET  

I

S

= 20A, V

GS

= 0V  

A

I

SM  

V

SD  

t

rr  

—  

V

Reverse Recovery Time  

Reverse Recovery Charge  

152  

1

ns  

μC  

V

GS

= 0V,I

F

= 10A,  

di

F

/dt =100A /μs  

Q

rr  

—  

Notes

：

 

1. Repetitive

 

Rating: Pulse width limited by maximum junction temperature  

2. L

 

= 1mH, V

DD

= 30V, R

G

= 25

Ω, Starting

T

J

= 25 ºC  

3. Pulse

 

Test: Pulse width

≤ 300μs,

Duty Cycle

≤

1%  

第2页,共6页  

IRFB4321PBF  

200V N-Channel MOSFET  

Typical Characteristics

T

J

= 25

º

C, unless otherwise noted  

Figure 1. Output Characteristics (T

J

= 25ºC)  

Figure 2. Transfe

r

C

haracteristics  

Figure 3. Drain to Source Resistance vs

.

D

rain Current  

Figure 4

. B

V

DSS

Variation vs. Temperature  

1.2  

1.15  

1.1  

V

GS

= 0V I

D

=250uA  

1.05  

1

0.95  

0.9  

-50 -25  

0

25  

50  

75 100

 

125 150  

T

C

, Case Temperature (

º

C)  

Figure 6. Body Diode Forwar

d

C

haracteristics  

T

C

, Case Temperature (A)  

Figure 5. Drain to Source Voltage vs. Gate t

o

S

ource Voltage  

第3页,共6页  

IRFB4321PBF  

200V N-Channel MOSFET  

Typical Characteristics

T

J

= 25

º

C, unless otherwise noted  

Figure 7. Capacitance  

Figure 8. Gate Charge  

Figure 10. Transient Thermal Impedance  

TO-220  

Figure 9. Transient Thermal Impedance  

TO-220  

10

1  

10

0  

10

-1  

10

-2  

10

-3  

10

1  

10

0  

10

-1  

10

-2  

10

-3  

D = 0.5  

D = 0.2  

D = 0.1  

D = 0.5  

D = 0.2  

D = 0.1  

D = 0.05  

D = 0.02  

D = 0.01  

Single Pulse  

D = 0.05  

D = 0.02  

D = 0.01  

Single Pulse  

10

-4  

10

-3  

10

-2  

10

-1  

10

-6

10

-5

1

0

-4  

10

-3  

10

-2

10

-1  

10

0  

10

1  

10

-7  

10

-6  

10

-5  

T

p

, Pulse Width (s)  

T

p

, Pulse Widt

h

(

s)  

第4页,共6页  

IRFB4321PBF  

200V N-Channel MOSFET  

Figure A

：

Gate Charge Test Circuit and Waveform  

Figure B

：

Resistive Switching Test Circuit and W

avef

orm  

Figure C

：

Unclamped Inductive Switching Test Circuit and Waveform  

第5页,共6页  

IRFB4321PBF  

200V N-Channel MOSFET  

Package Outline: TO-220  

Size  

Size  

Size  

Max  

12.78 13.18  

Size  

Symbol  

Symbol  

Symbol  

Symbol  

Min  

Max  

Min  

Max  

Min  

Min  

Max  

W

9.96  

10.36  

W4  

L

L1  

L2  

0.25  

0.45  

16.07  

6.88  

L3  

T

T1  

T2  

T3  

G(Φ)  

0.45  

3.08  

0.60  

3.28  

W1  

W2  

W3  

2.54 (TYP)  

15.67  

6.48  

3.20  

4.50  

2.34  

2.56  

4.90  

2.74  

2.96  

0.70  

1.24  

0.90  

1.47  

3.40  

第6页,共6页